SATVIR SINGH DESWAL

@mait.ac.in

Dean & Professor, Electrical and Electronics Engineering
MAHARAJA AGRASEN INSTITUTE OF TECHNOLOGY, GGSIPU, DELHI

SATVIR SINGH DESWAL
S.S.Deswal received his B.Tech degree in Electrical Engineering from R.E.C, Kurukshetra , Kurukshetra University ,Haryana, India in 1998, the M.E degree in Electrical Engineering(Power Apparatus and Systems) from Delhi College of Engineering, Delhi University, Delhi, India in 2005, and Doctor of Philosophy ( in Electrical Engineering from N.I.T, Kurukshetra, Haryana a Deemed University, Haryana, Delhi in February 2012 on the research Topic “Ride Through Capabilities for Adjustable Speed Drives(ASD’s)”.
Currently, he is holding an additional charge of Dean (Academics) along with Associate Professor in EEE Department with the Maharaja Agrasen Institute of technology, Rohini, Delhi under GGSIP University. He has joined Maharaja Agrasen Institute of technology on October 6, 2006 as a Senior Lecturer.
Before joining MAIT in 2006, he was with C.R.Institute of Technology, Kanjhawala, Delhi and was working as Head of the Electrical and Instrumentation Control Department, from 1998 to 2006

EDUCATION

Ph.D in Electrical Engineering (NIT, KKR)
M.TECH (PAS) (DELHI COLLEGE OF ENGINEERING
B.TECH IN ELECTRICAL ENGINEERING (REC, KKR)

RESEARCH, TEACHING, or OTHER INTERESTS

Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment
51

Scopus Publications

1177

Scholar Citations

19

Scholar h-index

26

Scholar i10-index

Scopus Publications

RECENT SCHOLAR PUBLICATIONS

  • Coordinated VSG-SMES Control for Enhanced Frequency Stability in Hybrid Power Systems
    V Suri, R Sharma, N Nagpal, N Kassarwani, SS Deswal, S Panda
    2025 International Conference on Power Electronics and Energy (ICPEE), 1-6 , 2025
    2025
  • Temperature-Dependent Highly Sensitive Stack-Engineered Junctionless-Accumulation- Surrounding Gate FET (SE-JAM-SG FET) for the PH 3 Gas Detector
    Neeraj, S Sharma, A Goel, S Rewari, SS Deswal, RS Gupta
    IETE Journal of Research, 1-18 , 2025
    2025
  • Temperature-induced performance variation in GaN cylindrical Schottky Barrier MOSFETs: A comprehensive study
    S Sharma, P Goyal, A Das, M Athwal, N Yadav, S Manasoori, Lucky, ...
    AIP Conference Proceedings 3362 (1), 030002 , 2025
    2025
    Citations: 2
  • Analytical characterization of a label free Si/InAs hetero-interfaced cylindrical BioFETD for biosensing applications
    A Das, S Rewari, BK Kanaujia, SS Deswal, RS Gupta
    Micro and Nanostructures 204, 208152 , 2025
    2025
    Citations: 34
  • Analytical modeling of cylindrical Silicon-on-Insulator Schottky Barrier MOSFET and impact of insulator pillar radius on analog/RF and linearity parameters for low power …
    J Kumar, A Saxena, SS Deswal, AN Mahajan, RS Gupta
    Microelectronics Journal 156, 106505 , 2025
    2025
    Citations: 1
  • Numerical simulation-based biosensing performance exploration of a cylindrical BioFET using machine learning
    A Das, S Rewari, BK Kanaujia, SS Deswal, RS Gupta
    Machine Learning for Semiconductor Materials, 109-141 , 2025
    2025
    Citations: 4
  • Temprature Dependance on Various Electrical Characterstics for Silicon Carbide (4H-SiC) Based Gate—Stack (GS) Dual Metal (DM) Nanowire (NW) FET
    S Sharma, A Goel, S Rewari, SS Deswal, RS Gupta
    2024 IEEE 21st India Council International Conference (INDICON), 1-7 , 2024
    2024
  • Analog and high frequency analysis of dielectric pocket engineered (DPE) 4H-SiC based dual metal (DM), gate-stack (GS), surrounding gate, FET (DPE-4H-SiC-GSDM-SGFET) for GIDL …
    S Sharma, A Goel, S Rewari, SS Deswal, RS Gupta
    2024 IEEE International Conference of Electron Devices Society Kolkata … , 2024
    2024
    Citations: 1
  • Impact of interface trap charges on silicon carbide (4H-SiC) based gate–stack, dual metal, surrounding gate, FET (4H-SiC-GSDM-SGFET) for analog and noise performance analysis …
    Neeraj, S Sharma, A Goel, S Rewari, SS Deswal, RS Gupta
    ECS Journal of Solid State Science and Technology 13 (7), 073015 , 2024
    2024
    Citations: 6
  • RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications
    J Kumar, AN Mahajan, SS Deswal, A Saxena, RS Gupta
    Microsystem Technologies 30 (6), 673-685 , 2024
    2024
    Citations: 5
  • Initial Design Procedure for Electric Two-Wheeler Retrofitting Using Internal Combustion Drive Cycles
    Lakshay, V Agarwal, N Nagpal, SS Deswal
    International Conference on Renewable Power, 321-343 , 2024
    2024
  • Design of low power analog/RF signal processing circuits using 22 nm silicon-on-insulator Schottky barrier nano-wire MOSFET
    J Kumar, AN Mahajan, SS Deswal, A Saxena, RS Gupta
    International Journal of High Speed Electronics and Systems 33 (01), 2450003 , 2024
    2024
    Citations: 5
  • Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH 3 Gas Detector
    Neeraj, S Sharma, A Goel, R Sonam, SS Deswal, RS Gupta
    ECS Journal of Solid State Science and Technology 13 (2), 027007 , 2024
    2024
    Citations: 13
  • Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET (DM‐HK‐SNWFET)
    S Sharma, V Nath, SS Deswal, RS Gupta
    International Journal of Numerical Modelling: Electronic Networks, Devices … , 2024
    2024
    Citations: 1
  • Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation
    A Das, S Rewari, BK Kanaujia, SS Deswal, RS Gupta
    Physica Scripta 98 (11), 115013 , 2023
    2023
    Citations: 65
  • Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications
    A Das, S Rewari, BK Kanaujia, SS Deswal, RS Gupta
    International Journal of Numerical Modelling: Electronic Networks, Devices … , 2023
    2023
    Citations: 58
  • Extraction of non-quasi-static model parameters for cylindrical gate-stacked junction-less accumulation mode MOSFET and its implementation as RF filters for circuit applications
    J Kumar, AN Mahajan, SS Deswal, A Saxena, RS Gupta
    Microsystem Technologies 29 (10), 1431-1442 , 2023
    2023
    Citations: 2
  • Ge/Si interfaced label free nanowire BIOFET for biomolecules detection-analytical analysis
    A Das, S Rewari, BK Kanaujia, SS Deswal, RS Gupta
    Microelectronics Journal 138, 105832 , 2023
    2023
    Citations: 65
  • Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET
    A Das, S Rewari, BK Kanaujia, SS Deswal, RS Gupta
    Physica Scripta 98 (7), 074005 , 2023
    2023
    Citations: 61
  • Analytical modelling, simulation, and characterization of temperature-dependent GaN-HK-SBNWFET for high-frequency application
    S Sharma, V Nath, SS Deswal, RS Gupta
    Microelectronics Journal 137, 105797 , 2023
    2023
    Citations: 6

MOST CITED SCHOLAR PUBLICATIONS

  • Numerical modeling of a dielectric modulated surrounding-triple-gate germanium-source MOSFET (DM-STGGS-MOSFET)-based biosensor
    A Das, S Rewari, BK Kanaujia, SS Deswal, RS Gupta
    Journal of Computational Electronics 22 (2), 742-759 , 2023
    2023
    Citations: 76
  • Dielectric modulated junctionless biotube FET (DM-JL-BT-FET) bio-sensor
    A Goel, S Rewari, S Verma, SS Deswal, RS Gupta
    IEEE Sensors Journal 21 (15), 16731-16743 , 2021
    2021
    Citations: 74
  • A New Approach for the Security of VPN
    KKVV Singh, H Gupta
    Proceedings of the Second International Conference on Information and … , 2016
    2016
    Citations: 69
  • Numerical modeling of Subthreshold region of junctionless double surrounding gate MOSFET (JLDSG)
    SRSHVNSSDRS Gupta
    Superlattices and Microstructures 90, 8-19 , 2015
    2015
    Citations: 69
  • Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation
    A Das, S Rewari, BK Kanaujia, SS Deswal, RS Gupta
    Physica Scripta 98 (11), 115013 , 2023
    2023
    Citations: 65
  • Ge/Si interfaced label free nanowire BIOFET for biomolecules detection-analytical analysis
    A Das, S Rewari, BK Kanaujia, SS Deswal, RS Gupta
    Microelectronics Journal 138, 105832 , 2023
    2023
    Citations: 65
  • Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET
    A Das, S Rewari, BK Kanaujia, SS Deswal, RS Gupta
    Physica Scripta 98 (7), 074005 , 2023
    2023
    Citations: 61
  • Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications
    A Das, S Rewari, BK Kanaujia, SS Deswal, RS Gupta
    International Journal of Numerical Modelling: Electronic Networks, Devices … , 2023
    2023
    Citations: 58
  • Gate-induced drain leakage reduction in cylindrical dual-metal hetero-dielectric gate all around MOSFET
    S Rewari, V Nath, S Haldar, SS Deswal, RS Gupta
    IEEE Transactions on Electron Devices 65 (1), 3-10 , 2017
    2017
    Citations: 55
  • Analytical modeling of Junctionless Accumulation Mode Cylindrical Surrounding Gate MOSFET (JAM‐CSG)
    N Trivedi, M Kumar, S Haldar, SS Deswal, M Gupta, RS Gupta
    International Journal of Numerical Modelling: Electronic Networks, Devices … , 2016
    2016
    Citations: 51
  • Improved analog and AC performance with increased noise immunity using nanotube junctionless field effect transistor (NJLFET)
    S Rewari, V Nath, S Haldar, SS Deswal, RS Gupta
    Applied Physics A 122 (12), 1049 , 2016
    2016
    Citations: 49
  • Doping induced threshold voltage and I ON /I OFF ratio modulation in surrounding gate MOSFET for analog applications
    A Das, BK Kanaujia, SS Deswal, S Rewari, RS Gupta
    2022 IEEE international conference of electron devices society kolkata … , 2022
    2022
    Citations: 44
  • Hafnium oxide based cylindrical junctionless double surrounding gate (CJLDSG) MOSFET for high speed, high frequency digital and analog applications
    S Rewari, V Nath, S Haldar, SS Deswal, RS Gupta
    Microsystem Technologies 25 (5), 1527-1536 , 2019
    2019
    Citations: 44
  • Novel design to improve band to band tunneling and gate induced drain leakages (GIDL) in cylindrical gate all around (GAA) MOSFET
    S Rewari, V Nath, S Haldar, SS Deswal, RS Gupta
    Microsystem Technologies 25 (5), 1537-1546 , 2019
    2019
    Citations: 39
  • Analytical characterization of a label free Si/InAs hetero-interfaced cylindrical BioFETD for biosensing applications
    A Das, S Rewari, BK Kanaujia, SS Deswal, RS Gupta
    Micro and Nanostructures 204, 208152 , 2025
    2025
    Citations: 34
  • Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered-Schottky nano-wire fet (GaN-GME-DE-SNW-fet) based label-free biosensor
    S Sharma, V Nath, SS Deswal, RS Gupta
    Microelectronics Journal 129, 105599 , 2022
    2022
    Citations: 33
  • Charge plasma technique based dopingless accumulation mode junctionless cylindrical surrounding gate MOSFET: analog performance improvement
    N Trivedi, M Kumar, S Haldar, SS Deswal, M Gupta, RS Gupta
    Applied Physics A 123 (9), 564 , 2017
    2017
    Citations: 30
  • Sensitivity investigation of gate-all-around junctionless transistor for hydrogen gas detection
    Y Pratap, M Kumar, M Gupta, S Haldar, RS Gupta, SS Deswal
    2016 IEEE International Nanoelectronics Conference (INEC), 1-2 , 2016
    2016
    Citations: 22
  • Analytical modeling simulation and characterization of short channel Junctionless Accumulation Mode Surrounding Gate (JLAMSG) MOSFET for improved analog/RF performance
    N Trivedi, M Kumar, S Haldar, SS Deswal, M Gupta, RS Gupta
    Superlattices and Microstructures 100, 1263-1275 , 2016
    2016
    Citations: 21
  • Application of boost converter for ride-through capability of adjustable speed drives during sag and swell conditions
    SS Deswal, R Dahiya, DK Jain
    World Academy of Science, Engineering and Technology 47, 282-286 , 2008
    2008
    Citations: 18