MUDIREDDY BALASUBBAREDDY

Scopus Publications

A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor
A. E. Atamuratov, D. R. Rajapov, M. M. Khalilloev, K. Sivasankaran, M. Balasubbareddy, A.Yusupov
Silicon, 2025
Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization
M. Balasubbareddy, K. Sivasankaran, A. E. Atamuratov, M. M. Khalilloev
Journal of Computational Electronics, 2025
Optimization of junctionless stacked nanosheet FET – RF stability perspective
Balasubbareddy M, Sivasankaran K
Microelectronics Journal, 2024
Impact of Device-to-Device Thermal Interference Due to Self-Heating on the Performance of Stacked Nanosheet FETs
M. Balasubbareddy, K. Sivasankaran
IEEE Access, 2024
The stacked nanosheet field effect transistor (SNSHFET) exhibits superior electrostatic performance with its increased effective channel width. However, as the technology node progressing towards angstrom dimensions, self-heating became one of the major challenges in SNSHFETs due to their confined geometry. The self-heating impacts not only the respective device, but also its contiguous device on the same substrate. In this paper, the thermal impact of heat stacked nanosheet FET (He-FET) on proximal cool stacked nanosheet FET (Co-FET) is studied at 7 nm technology node. Thermal impact on DC and analog/RF performance of Co-FET is deliberated by varying the inter-device spacing (IDS) and shallow trench isolation (STI) depth between the two stacked nanosheet FETs. It has been observed that, self-heating induced thermal energy of He-FET shows more impact on the bottom channels compared to the top channels in the Co-FET. The electron mobility is reduced by 4.25% in the channel near to the substrate compared to the channel near to contacts. The transit frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) and the maximum oscillation frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) of 131.5 GHz and 435 GHz were obtained, respectively with the optimization of IDS of 30 nm and STI depth of 50 nm.
Optimization of vertically stacked nanosheet FET immune to self-heating
M. Balasubbareddy, K. Sivasankaran, Atabek E. Atamuratov, Mahkam M. Khalilloev
Micro and Nanostructures, 2023

MUDIREDDY BALASUBBAREDDY

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Scopus Publications