Sandeep V

@kalasalingam.ac.in

Post-doctoral research fellow in Department of ECE
Kalasalingam Academy of Research and Education

Sandeep V


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https://researchid.co/sandeep850

RESEARCH INTERESTS

GaN High Electron Mobility Transistors (HEMTs), Metal Oxide Semiconductor HEMTs, semiconductor modeling and simulation, integrated microelectronics
17

Scopus Publications

107

Scholar Citations

5

Scholar h-index

3

Scholar i10-index

Scopus Publications

  • Impact of Hole Density on Sub-10 nm SOI Trigate MOSFET Using Charge Plasma Technique with Circuit-Level Analysis
    Journal of Nano and Electronic Physics, 2026
  • Performance Enhancement of T-gated GaN HEMTs Using Polarization-Graded AlGaN Back Barrier for High-Frequency Applications
    B. Mohan, J. Charles Pravin, V. Sandeep
    Semiconductors, 2025
    Abstract This paper proposes a polarization-graded AlGaN back barrier to improve the direct current and RF performance of GaN-based High Electron Mobility Transistors (HEMTs). The device structure integrates a Silicon Carbide (SiC) substrate, a T-gate configuration, and a graded AlGaN back barrier. Sentaurus TCAD simulations are employed to analyze both graded and non-graded structures. For LG = 0.3 µm, the maximum drain current (IDmax) increases from 1.14 A/mm in the Non-graded case to 1.44 A/mm in the Graded structure. Similarly, transconductance (gm) improves from 175.46 to 191.04 mS/mm, cutoff frequency (FT) increases from 219.26 to 272.92 GHz, and maximum oscillation frequency (Fmax) rises from 221.31 to 279.8 GHz. These improvements demonstrate that combining a SiC substrate, a T-gate, and a graded AlGaN back barrier enhances device performance, offering strong potential for next-generation high-frequency and high-power applications.
  • Analysis of Palladium-induced Charges in the Device Characteristics of a TiO2-based Thin Film Transistor for Gas Sensing Applications
    Uttam Acharya, S. S. Sharadhruthi, M. Sachin, Sameeksha Sanil, V. Sandeep
    Semiconductors, 2025
    Abstract— This study focuses on designing and simulating a Titanium Dioxide (TiO2) based Thin Film Transistor (TFT) using Sentaurus Technology CAD (TCAD) tool. A Palladium metal layer is placed over the TFT to enhance the device’s sensitivity to toxic gases, particularly those associated with food spoilage and contamination. The simulations explore the Pd-induced changes in the drain current, threshold voltage, as well as subthreshold swing of the TiO2 TFT. The simulation leverages a process known as the electro-desorption mechanism, which is fast and efficient, making the device capable of real-time monitoring. The device’s performance is evaluated through its output and transfer characteristics, demonstrating a superior response when compared to traditional MOSFET devices. The incorporation of Pd facilitates a significant improvement in the device’s ability to detect minute changes in gas concentrations, which is crucial for early detection of food spoilage. Current drive as high as 9.01 μA was attained in the proposed TFT device before placing the Palladium toxic material, and after placing, nearly 4 μA reduction in current drive is observed. These characteristics reveal the enhanced sensitivity of the device to toxic gases, underscoring its potential as a reliable and accurate tool for food safety applications. The study also highlights the advantages of incorporating palladium as a sensing layer, offering greater detection precision and a faster response time for identifying hazardous gases in various food environments. The electrical characteristics of the device are thoroughly examined in the study’s conclusion, emphasizing its potential for low-power uses in portable food safety monitoring systems. The findings show that the Pd-functionalized TiO2 TFT is a viable way to create sophisticated gas sensors for food safety applications that have improved sensitivity, selectivity, and stability.
  • Exploring vertical transition metal dichalcogenide heterostructure MOSFET: A comprehensive review
    U. Malu, J. Charles Pravin, V. Sandeep
    Field Effect Transistors, 2025
    Due to their distinctive qualities and atomic thickness, two-dimensional (2D) materials have garnered a lot of attention. The study of the spatial confinement of charge carriers, photons, and phonons has recently attracted interest in 2D transition metal dichalcogenides (TMDs), which are atomically thin materials. For adjusting optical absorption in the visible range, a heterostructure of monolayer MoS 2 and mercury cadmium telluride (HgCdTe) is suggested. 2D materials like TMDs possess excellent scalability and compatibility with existing silicon-based technology, making them viable candidates for future integrated circuits. The main benefit of the vertical design is its ability to separate the footprint from the gate length and contact length, which increases packing density. After a modest beginning 60 years ago, research on 2D materials has seen a massive upsurge since 2004 and is still a very active field today. Their ability to operate at lower power levels and higher frequencies positions them as key contenders for advancing semiconductor technology and enabling more energy-efficient electronics.
  • Comparative Analysis of Recessed-Gate AlGaN/GaN HEMTs with GaN and β-Ga2O3 Buffer Layers
    Lakshmi Priya K, S. Karthik, V. Sandeep
    4th IEEE International Conference on Distributed Computing and Electrical Circuits and Electronics Icdcece 2025, 2025
    AlGaN/GaN High-Electron-Mobility Transistors are extensively employed in high-frequency and power applications as a result of their exceptional thermal stability and electron transport capacity. This investigation provides a simulation-based comparison of AlGaN/GaN HEMTs with GaN and β-Ga2O3 buffer layers. The β-Ga2O3 buffer’s ultra-wide bandgap characteristics have an impact on device performance, while the GaN buffer offers high electron mobility and excellent material compatibility. The recessed-gate structure, which consists of a β-Ga2O3 buffer, improves transconductance, reduces gate-to-drain capacitance, and increases drain current density, thereby enhancing electrostatic control. Furthermore, β-Ga2O3 functions as a natural back-barrier, which influences the confinement of two-dimensional electron gas (2DEG) and mitigates the effects of interface traps.The influence of the buffer layer on carrier transport and gate capacitance is examined through Sentaurus TCAD simulations, providing insights into its impact on device performance and electrostatic control. These results suggest that β-Ga2O3 buffer layers have the potential to improve specific performance metrics in AlGaN/GaN HEMTs, offering them a promising alternative for next-generation power and RF applications.
  • Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review
    V. Sandeep, J. Charles Pravin, S. Ashok Kumar
    Microelectronics Reliability, 2024
  • INVESTIGATING DOUBLE GATE LITHIUM NIOBATEBASED METAL FERROELECTRIC METAL INSULATOR SEMICONDUCTOR (MFMIS) NCFETS THROUGH ANALYTICAL MODELING AND SIMULATION
    Suranaree Journal of Science and Technology, 2024
  • Analytical modeling and quasi-static characterization of a lithium niobate (LiNbO3)-based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET
    N. R. Saritha, J. Charles Pravin, V. Sandeep, Josephine Selle J, V. N. Ramakrishnan
    Journal of Computational Electronics, 2023
  • Implementation of charge plasma based dopingless multi bridge channel MOSFET for enhanced performances
    S. Ashok Kumar, J. Charles Pravin, V. Sandeep, R. Sridevi
    Physica E Low Dimensional Systems and Nanostructures, 2023
  • Design and Investigation of a Charge Plasma-based dopingless Cylindrical NW SCFET for sub-10 nm
    V. Sandeep, J. Charles Pravin, S. Ashok Kumar
    Proceedings of the International Semiconductor Conference CAS, 2023
    This article presents an approach for implementing a Cylindrical Nanowire Single Channel Field Effect Transistor (SCFET) without the use of doping in the channel region (dopingless). Using an appropriate work function for the outer metal electrode and the Charge Plasma (CP) process, the n-type semiconductor is produced, where a single channel is used. By placing the gate length (LG) at 1$\\theta$ nm, with channel and oxide thicknesses of 5 and 1 nm each, Sentaurus Technology Computer-Aided Design (TCAD) simulations are employed to compare the electrical properties of the proposed device to a normally undoped double gate MOSFET. Instead of two channels with identical spacing among vertical stackings, the NWSCFET has a single narrow channel. Utilising the linked Drift-Diffusion (DD) technique and Shockley-Read-Hall Recombination (SRH) method, the device performance has been quantitatively assessed. In accordance with the charge plasma and single-channel approach, the current obtained for the single-channel device has almost been doubled when compared with a Cylindrical Gate-All-Around double-channel NW MOSFET. In addition to the above parameters, the Short Channel Effects (SCE) have been reduced up to a certain extent.
  • Performance Evaluation of LiNbO3-based Negative Capacitance Field Effect Transistors (NCFETs)
    J. Charles Pravin, G. Anusha, Ch Tushara Supriya, P.B.V.N. Sai Sumanth, V Sandeep, Josephine Selle J
    Proceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter Edkcon 2022, 2022
  • Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT
    V. Sandeep, J. Charles Pravin
    Superlattices and Microstructures, 2021
  • Anomaly intrusion detection using SVM and C4.5 classification with an improved particle swarm optimization (I-PSO)
    V. Sandeep, Saravanan Kondappan, Amir Anton Jone, Raj Barath S.
    International Journal of Information Security and Privacy, 2021
  • Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT
    V. Sandeep, , J. Charles Pravin, and
    Journal of Nano and Electronic Physics, 2021
  • CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics
    V. Sandeep, J. Charles Pravin, A. Ramesh Babu, P. Prajoon
    Proceedings of the 4th International Conference on Electronics Communication and Aerospace Technology Iceca 2020, 2020
  • Impact of AlInN Back-Barrier over AlGaN/GaN MOS-HEMT with HfO Dielectric Using Cubic Spline Interpolation Technique
    V. Sandeep, J. Charles Pravin, A. Ramesh Babu, P. Prajoon
    IEEE Transactions on Electron Devices, 2020
  • Evaluation of Charge Density and Sheet Carrier Concentration in the 2DEG Area of AlGaN/AlN High Electron Mobility Transistors (HEMTs)
    J. Charles Pravin, K. Kirtika, V. Sandeep
    IEEE International Conference on Intelligent Techniques in Control Optimization and Signal Processing Incos 2019, 2019

RECENT SCHOLAR PUBLICATIONS

  • A Field Plate Engineering Approach for Optimizing DC and Breakdown Performances of an AlGaN/GaN/AlGaN MOS-HEMT
    V Sandeep, JC Pravin, B Mohan
    Sustainable Materials and Technologies in VLSI and Information Processing … , 2025
    2025.0
  • Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review
    V Sandeep, JC Pravin, SA Kumar
    Microelectronics Reliability 159, 115445 , 2024
    2024.0
    Citations: 25
  • Design and Investigation of a Charge Plasma-based dopingless Cylindrical NW SCFET for sub-10 nm
    V Sandeep, JC Pravin, SA Kumar
    2023 International Semiconductor Conference (CAS), 161-164 , 2023
    2023.0
    Citations: 1
  • Analytical modeling and quasi‑static characterization of lithium niobate (LiNbO3)‑based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET
    JSJVNR N.R. Saritha, J. Charles Pravin, V. Sandeep
    Journal of Computational Electronics , 2023
    2023.0
    Citations: 1
  • Implementation of charge plasma based dopingless multi bridge channel MOSFET for enhanced performances
    SA Kumar, JC Pravin, V Sandeep, R Sridevi
    Physica E: Low-dimensional Systems and Nanostructures, 115619 , 2022
    2022.0
    Citations: 8
  • Performance Evaluation of LiNbO 3 -based Negative Capacitance Field Effect Transistors (NCFETs)
    JC Pravin, G Anusha, CT Supriya, PS Sumanth, V Sandeep, J Selle
    2022 IEEE International Conference of Electron Devices Society Kolkata … , 2022
    2022.0
    Citations: 1
  • ANALYTICAL MODELING OF ALGAN/GAN/INGAN HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) THROUGH POLARIZATION EFFECTS
    V Sandeep, JC Pravin
    2021.0
    Citations: 1
  • Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT
    V Sandeep, JC Pravin
    Superlattices and Microstructures 156, 106954 , 2021
    2021.0
    Citations: 19
  • Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique
    S Viswanathan, C Pravin, RB Arasamudi, P Pavithran
    International Journal of Numerical Modelling: Electronic Networks, Devices … , 2021
    2021.0
    Citations: 5
  • Anomaly Intrusion Detection Using SVM and C4. 5 Classification With an Improved Particle Swarm Optimization (I-PSO)
    V Sandeep, S Kondappan, AA Jone
    International Journal of Information Security and Privacy (IJISP) 15 (2 … , 2021
    2021.0
    Citations: 7
  • Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT
    V Sandeep, J Charles Pravin
    Sumy State University , 2021
    2021.0
    Citations: 2
  • CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics
    V Sandeep, JC Pravin, AR Babu, P Prajoon
    2020 4th International Conference on Electronics, Communication and … , 2020
    2020.0
    Citations: 4
  • Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique
    V Sandeep, JC Pravin, AR Babu, P Prajoon
    IEEE Transactions on Electron Devices 67 (9), 3558-3563 , 2020
    2020.0
    Citations: 33
  • Evaluation of Charge Density and Sheet Carrier Concentration in the 2DEG Area of AlGaN/AlN High Electron Mobility Transistors (HEMTs)
    JC Pravin, K Kirtika, V Sandeep
    2019 IEEE International Conference on Intelligent Techniques in Control … , 2019
    2019.0
  • Robust CT Images Noise Reduction using Wavelet and Contourlet Transform
    AVH V. Sandeep, Pradeep M. Jawandhiya, Santham Bharathy Alagarsamy
    International Journal of Innovations in Scientific and Engineering Research … , 2019
    2019.0
  • A Secured E Health Architecture using the Internet of Things
    V Sandeep
    International Journal of Scientific & Engineering Research 7 (5), 219-224 , 2016
    2016.0
  • Numerical Modelling of GaN HEMTS
    V Sandeep, JC Pravin
    Modeling of AlGaN/GaN High Electron Mobility Transistors, 207 , 0
  • Modeling and Simulation of AlGaN GaN AlInN Metal Oxide Semiconductor High Electron Mobility Transistors
    V Sandeep
    Virudhunagar , 0

MOST CITED SCHOLAR PUBLICATIONS

  • Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique
    V Sandeep, JC Pravin, AR Babu, P Prajoon
    IEEE Transactions on Electron Devices 67 (9), 3558-3563 , 2020
    2020.0
    Citations: 33
  • Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review
    V Sandeep, JC Pravin, SA Kumar
    Microelectronics Reliability 159, 115445 , 2024
    2024.0
    Citations: 25
  • Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT
    V Sandeep, JC Pravin
    Superlattices and Microstructures 156, 106954 , 2021
    2021.0
    Citations: 19
  • Implementation of charge plasma based dopingless multi bridge channel MOSFET for enhanced performances
    SA Kumar, JC Pravin, V Sandeep, R Sridevi
    Physica E: Low-dimensional Systems and Nanostructures, 115619 , 2022
    2022.0
    Citations: 8
  • Anomaly Intrusion Detection Using SVM and C4. 5 Classification With an Improved Particle Swarm Optimization (I-PSO)
    V Sandeep, S Kondappan, AA Jone
    International Journal of Information Security and Privacy (IJISP) 15 (2 … , 2021
    2021.0
    Citations: 7
  • Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique
    S Viswanathan, C Pravin, RB Arasamudi, P Pavithran
    International Journal of Numerical Modelling: Electronic Networks, Devices … , 2021
    2021.0
    Citations: 5
  • CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics
    V Sandeep, JC Pravin, AR Babu, P Prajoon
    2020 4th International Conference on Electronics, Communication and … , 2020
    2020.0
    Citations: 4
  • Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT
    V Sandeep, J Charles Pravin
    Sumy State University , 2021
    2021.0
    Citations: 2
  • Design and Investigation of a Charge Plasma-based dopingless Cylindrical NW SCFET for sub-10 nm
    V Sandeep, JC Pravin, SA Kumar
    2023 International Semiconductor Conference (CAS), 161-164 , 2023
    2023.0
    Citations: 1
  • Analytical modeling and quasi‑static characterization of lithium niobate (LiNbO3)‑based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET
    JSJVNR N.R. Saritha, J. Charles Pravin, V. Sandeep
    Journal of Computational Electronics , 2023
    2023.0
    Citations: 1
  • Performance Evaluation of LiNbO 3 -based Negative Capacitance Field Effect Transistors (NCFETs)
    JC Pravin, G Anusha, CT Supriya, PS Sumanth, V Sandeep, J Selle
    2022 IEEE International Conference of Electron Devices Society Kolkata … , 2022
    2022.0
    Citations: 1
  • ANALYTICAL MODELING OF ALGAN/GAN/INGAN HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) THROUGH POLARIZATION EFFECTS
    V Sandeep, JC Pravin
    2021.0
    Citations: 1
  • A Field Plate Engineering Approach for Optimizing DC and Breakdown Performances of an AlGaN/GaN/AlGaN MOS-HEMT
    V Sandeep, JC Pravin, B Mohan
    Sustainable Materials and Technologies in VLSI and Information Processing … , 2025
    2025.0
  • Evaluation of Charge Density and Sheet Carrier Concentration in the 2DEG Area of AlGaN/AlN High Electron Mobility Transistors (HEMTs)
    JC Pravin, K Kirtika, V Sandeep
    2019 IEEE International Conference on Intelligent Techniques in Control … , 2019
    2019.0
  • Robust CT Images Noise Reduction using Wavelet and Contourlet Transform
    AVH V. Sandeep, Pradeep M. Jawandhiya, Santham Bharathy Alagarsamy
    International Journal of Innovations in Scientific and Engineering Research … , 2019
    2019.0
  • A Secured E Health Architecture using the Internet of Things
    V Sandeep
    International Journal of Scientific & Engineering Research 7 (5), 219-224 , 2016
    2016.0
  • Numerical Modelling of GaN HEMTS
    V Sandeep, JC Pravin
    Modeling of AlGaN/GaN High Electron Mobility Transistors, 207 , 0
  • Modeling and Simulation of AlGaN GaN AlInN Metal Oxide Semiconductor High Electron Mobility Transistors
    V Sandeep
    Virudhunagar , 0