SUKHENDU MAITY

@bbb.ac.in

Inspire Faculty Fellow
Biswa Bangla Biswabidyalay

SUKHENDU MAITY


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https://researchid.co/sukhendumaity

EDUCATION

2025-till Inspire Faculty, Biswa Bangla Biswabidyalay (Department of Physics.)
2024–2025 Postdoc, IACS (Asymmetric 2D TMDCs based Optoelectronics.)
2020-2024 Ph. D., IACS (Hybrid 2D Materials based Self-powered and Broadband Photodetectors.)
2017-2019 M. Sc. Vidyasagar University, Physics (Solid state Physics.)

RESEARCH, TEACHING, or OTHER INTERESTS

Materials Science, Multidisciplinary, Surfaces and Interfaces
7

Scopus Publications

93

Scholar Citations

5

Scholar h-index

3

Scholar i10-index

Scopus Publications

  • Dielectric and charge transport insights into Ag2S decorated MoS2 nanosheets driving high-performance photodetectors
    Krishna Gopal Mondal, Sukhendu Maity, Bappa Sona Kar, Satyajit Saha, Paresh Chandra Jana, Makhanlal Nanda Goswami
    Applied Surface Science, 2026
  • Asymmetric Electrode Engineering in p-Si/n-SnSSe Heterojunction Photodetectors for Enhanced Broadband Responsivity and Self-Powered Operation
    Sukhendu Maity, Praveen Kumar
    Advanced Optical Materials, 2026
    Advanced imaging, sensing, andtelecommunications demand high‐performance, low‐power broadband photodetectorswith improved responsivity and spectral range. This work fills a key gap bydemonstrating p‐Si/n‐Sn(S x Se 1‐x ) 2 verticalheterojunction (HJ) photodetectors with asymmetric Ag (Φ = 4.28 eV) /graphene(Φ = 4.7 eV) electrodes to optimize carrier dynamics and band alignment. Fourdevice configurations; symmetric (D1: Ag/HJ/Ag, D2: Gr/HJ/Gr) and asymmetric(D3: Gr/HJ/Ag, D4: Ag/HJ/Gr) were systematically investigated to elucidate therole of electrode asymmetry in enhancing photoresponse. D4 achievesstate‐of‐the‐art responsivity of 1.01 A/W, external quantum efficiency (EQE) of 197.29%, and specific detectivity of 3.75 × 10 11 Jones at 635 nm(130 µW/cm 2 , +3 V), driven by efficient hole injection at Ag/p‐Si (Φ Bp ≈ 0.87 eV) and electron extraction at Gr/n‐SnSSe (Φ Bn ≈ 0.38 eV), augmented by photoconductive gain from trap‐assisted carrier multiplication.The D3 device operates self‐powered, producing 16.6 nA at 0 V under white lightdue to a strong built‐in field from the Gr/Ag work‐function contrast. Thedevices show broadband response (505–940 nm) with high sensitivity performanceeven at low light intensities (<150 µW/cm 2 ). This work presentsa scalable, material‐efficient route to high‐efficiency self‐poweredphotodetectors for energy‐efficient broadband sensing.
  • A synergistic heterojunction of SnS2/SnSSe nanosheets on GaN for advanced self-powered photodetectors
    Sukhendu Maity, Praveen Kumar
    Nanoscale Horizons, 2024
    Tin-based TMDCs are gaining prominence in optoelectronics. This study presents the solvothermal synthesis of a Janus-like SnSSe alloy, which, when integrated with SnS2 on GaN, enhances light absorption, electron-hole separation, and enables self-powered photodetection.
  • WO3-NP-activated WS2 layered heterostructures for efficient broadband (254 nm-940 nm) photodetection
    Sukhendu Maity, Krishnendu Sarkar, Praveen Kumar
    Nanoscale, 2023
    Broadband photodetection covering deep UV on Si platform has been achieved by heterogeneous integration of WO3 NP activated WS2 with Si.
  • Layered Heterostructures Based on MoS2/MoSe2 Nanosheets Deposited on GaN Substrates for Photodetector Applications
    Sukhendu Maity, K. Sarkar, Praveen Kumar
    ACS Applied Nano Materials, 2023
    Due to the advanced properties of layered 2D materials, their heterostructuring with conventional 3D semiconductors is one of the promising ways to design efficient and affordable optoelectronic devices. However, systematic studies on designing 2D/3D heterojunctions with a focus on enhancing the photodetection properties are sparse in the literature. In this report, we present systematic experimental and theoretical investigations on 2D MoS 2 /MoSe 2 heterostructuring with modified GaN substrates for designing efficient photodetectors. We achieved a gradual increment in photocurrent by engineering MoS 2 and MoSe 2 as single/double heterojunctions on GaN substrates. Time-correlated single-photon counting (TCSPC) results infer significant improvement in the lifetimes of the photoexcited charge carriers for the optimized MoS 2 /MoSe 2 /e-GaN heterostructure-based photodetectors. Interestingly, photodetectors designed with double heterojunctions that maintain type-II band alignment (e-GaN/MoSe 2 /MoS 2 ) exhibit the highest photoresponsivity of 82 A/W, specific detectivity of 1.79 ×10 14 Jones, external quantum efficiency of 27,880%, and stability for over 6 months in a laboratory testing environment under the illumination of 365 nm. Density functional theory (DFT) simulations establish the superiority of double heterojunctions with staircase band alignment for efficient charge carrier transport. This study provides fundamental insights on optimizing the band alignment for desired photodetection concerning 2D/3D integration, which can be exploited for other hybrid integrated systems and applications.
  • MAPbI3-based efficient, transparent and air-stable broadband photodetectors
    Sukhendu Maity, Vinod Kumar Lokku, Akash Lata, K. Sarkar, Jahangeer Ahmed, M. A. Majeed Khan, Praveen Kumar
    Indian Journal of Physics, 2022
  • A progressive journey into 2D-chalcogenide/carbide/nitride-based broadband photodetectors: recent developments and future perspectives
    Sukhendu Maity, Krishnendu Sarkar, Praveen Kumar
    Journal of Materials Chemistry C, 2021
    Application of 2D-materials for broadband photodetection has been reviewed, covering synthesis, exfoliation, assembly, device configurations, heterojunction with other 3D/2D materials, along with flexible substrates and self-powered operation.

RECENT SCHOLAR PUBLICATIONS

  • Asymmetric Electrode Engineering in p‐Si/n‐SnSSe Heterojunction Photodetectors for Enhanced Broadband Responsivity and Self‐Powered Operation
    S Maity, P Kumar
    Advanced Optical Materials 14 (7), e03627 , 2026
    2026
  • Dielectric and charge transport insights into Ag2S decorated MoS2 nanosheets driving high-performance photodetectors
    KG Mondal, S Maity, BS Kar, S Saha, PC Jana, MN Goswami
    Applied Surface Science, 165660 , 2025
    2025
    Citations: 2
  • A synergistic heterojunction of SnS 2/SnSSe nanosheets on GaN for advanced self-powered photodetectors
    S Maity, P Kumar
    Nanoscale Horizons 9 (8), 1318-1329 , 2024
    2024
    Citations: 7
  • Layered Heterostructures Based on MoS 2 /MoSe 2 Nanosheets Deposited on GaN Substrates for Photodetector Applications
    S Maity, K Sarkar, P Kumar
    ACS Applied Nano Materials 6 (6), 4224-4235 , 2023
    2023
    Citations: 31
  • WO 3-NP-activated WS 2 layered heterostructures for efficient broadband (254 nm–940 nm) photodetection
    S Maity, K Sarkar, P Kumar
    Nanoscale 15 (39), 16068-16079 , 2023
    2023
    Citations: 13
  • MAPbI 3 -based efficient, transparent and air-stable broadband photodetectors: S Maity et al.
    S Maity, VK Lokku, A Lata, K Sarkar, J Ahmed, MA Majeed Khan, P Kumar
    Indian Journal of Physics 96 (3), 903-908 , 2022
    2022
    Citations: 6
  • Materials for optical, magnetic and electronic devices
    JV Paulin, CFO Graeff, S Maity, K Sarkar, P Kumar
    J. Mater. Chem 100 (9), 14596 , 2021
    2021
    Citations: 1
  • A progressive journey into 2D-chalcogenide/carbide/nitride-based broadband photodetectors: recent developments and future perspectives
    S Maity, K Sarkar, P Kumar
    Journal of Materials Chemistry C 9 (41), 14532-14572 , 2021
    2021
    Citations: 33

MOST CITED SCHOLAR PUBLICATIONS

  • A progressive journey into 2D-chalcogenide/carbide/nitride-based broadband photodetectors: recent developments and future perspectives
    S Maity, K Sarkar, P Kumar
    Journal of Materials Chemistry C 9 (41), 14532-14572 , 2021
    2021
    Citations: 33
  • Layered Heterostructures Based on MoS 2 /MoSe 2 Nanosheets Deposited on GaN Substrates for Photodetector Applications
    S Maity, K Sarkar, P Kumar
    ACS Applied Nano Materials 6 (6), 4224-4235 , 2023
    2023
    Citations: 31
  • WO 3-NP-activated WS 2 layered heterostructures for efficient broadband (254 nm–940 nm) photodetection
    S Maity, K Sarkar, P Kumar
    Nanoscale 15 (39), 16068-16079 , 2023
    2023
    Citations: 13
  • A synergistic heterojunction of SnS 2/SnSSe nanosheets on GaN for advanced self-powered photodetectors
    S Maity, P Kumar
    Nanoscale Horizons 9 (8), 1318-1329 , 2024
    2024
    Citations: 7
  • MAPbI 3 -based efficient, transparent and air-stable broadband photodetectors: S Maity et al.
    S Maity, VK Lokku, A Lata, K Sarkar, J Ahmed, MA Majeed Khan, P Kumar
    Indian Journal of Physics 96 (3), 903-908 , 2022
    2022
    Citations: 6
  • Dielectric and charge transport insights into Ag2S decorated MoS2 nanosheets driving high-performance photodetectors
    KG Mondal, S Maity, BS Kar, S Saha, PC Jana, MN Goswami
    Applied Surface Science, 165660 , 2025
    2025
    Citations: 2
  • Materials for optical, magnetic and electronic devices
    JV Paulin, CFO Graeff, S Maity, K Sarkar, P Kumar
    J. Mater. Chem 100 (9), 14596 , 2021
    2021
    Citations: 1
  • Asymmetric Electrode Engineering in p‐Si/n‐SnSSe Heterojunction Photodetectors for Enhanced Broadband Responsivity and Self‐Powered Operation
    S Maity, P Kumar
    Advanced Optical Materials 14 (7), e03627 , 2026
    2026

Publications

1. S. Maity, P. Kumar; Asymmetric Electrode Engineering in p-Si/n-SnSSe Heterojunction Photodetectors for Enhanced Broadband Responsivity and Self-Powered Operation; Advanced Optical Materials, 2026, 14, e03627.
2. K G Mondal, S Maity*, B S Kar, S Saha, P C Jana, M N Goswami; Dielectric and Charge Transport Insights into Ag2S decorated MoS2 Nanosheets Driving High-Performance Photodetectors; Applied Surface Science, 2026, 723, 165660.
3. S. Maity, P. Kumar; Synergistic Heterojunction of SnS2/SnSSe Nanosheets on GaN for Advanced Self-powered Photodetectors; Nanoscale Horizons, 2024, 9, 1318-1329.
4. S. Maity, K. Sarkar, P. Kumar; WO3-NP-activated WS2 layered heterostructures for efficient broadband (254 nm–940 nm) photodetection; Nanoscale, 2023, 15, 16068–16079.
5. S. Maity, K. Sarkar, P. Kumar; Layered Heterostructures Based on MoS2/MoSe2 Nanosheets Deposited on GaN Substrates for Photodetector Applications; ACS Appl. Nano Mater. 2023, 6, 4224−4235.
6. S Maity, V K Lokku, A Lata, K Sarkar, J Ahmed, M A Majeed Khan, P. Kumar; MAPbI3-based efficient, transparent and air-stable broadband photodetectors; Indian J Phys, 2022, 96, 903–908.
7. S. Maity, K. Sarkar, P. Kumar; A progressive journey into 2D-chalcogenide/ carbide/nitride- based broadband photodetectors: recent developments and future perspectives; J. Mater. Chem. C, 2021,9, 14532–14572.

GRANT DETAILS

Inspire Faculty Grant (2025-2030) 7 lakh/year.

RESEARCH OUTPUTS (PATENTS, SOFTWARE, PUBLICATIONS, PRODUCTS)

1. S Maity, K. Sarkar, P Kumar; One-pot chemical synthesis of transition metal dichalcogenide alloys with elemental chalcogens; Indian Patent (Application No: 202231028114).
2. S Maity, K. Sarkar, P Kumar; A facile high yield and room temperature synthesis process for two-dimensional transition metal dichalcogenides; Indian Patent (Application No:202131051578).

INDUSTRY EXPERIENCE

• 1st Runner-up, Tata Steel MaterialNEXT 3.0 (2022), for high-yield 2D materials synthesis.
• 2nd Winner, HPCL New Generation Ideation Contest (2024), for MoS2 as lubricant additive.