Doctor of Philosophy in Electrical and Computer Engineering, Rice University (Ongoing)
Bachelor of Science in Electrical and Electronic Engineering from Bangladesh University of Engineering and Technology.
RESEARCH, TEACHING, or OTHER INTERESTS
Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Science
11
Scopus Publications
181
Scholar Citations
5
Scholar h-index
3
Scholar i10-index
Scopus Publications
Gate leakage suppression in p-GaN/AlGaN p-channel transistors via transferred BN gate dielectric for high-temperature operation Cheng Chang, Chenyang Lin, Shisong Luo, Huayi Chen, Chufan Qiu, et al. Applied Physics Letters, 2026 In this Letter, we report gate leakage suppression in p-GaN/AlGaN p-channel transistors enabled by a transferred boron nitride (BN) gate dielectric for high-temperature operation. To elucidate the impact of BN integration, we systematically compare transfer characteristics, transconductance, and related metrics as functions of temperature (25–300 °C) for BN and conventional Schottky gate devices. Notably, current density in the BN device remains stable above ∼3 mA/mm at 300 °C, with an on/off ratio >103 and ID, max × LDS reaching ∼47 μA. At the same time, both the threshold voltage shift and the subthreshold slope show minimal variation, highlighting the excellent stability of this device. These results can provide insight into design strategies for high-temperature p-GaN p-channel transistors.
Ultrawide bandgap semiconductors for photonic applications: recent advances in epitaxial Ga2O3, hBN, and ScAlN [Invited] Tao Li, Md Jahidul Hoq Emon, Rummanur Rahad, Arka Chatterjee, Vijay Dalakoti, et al. Optical Materials Express, 2025 The epitaxial growth of semiconductor materials plays a pivotal role in photonic applications by enabling precise control over material composition and facilitating flexible heterogeneous integration. Sophisticated epitaxial techniques have been extensively developed for mature, narrow-bandgap semiconductor platforms such as silicon (Si) and indium phosphide (InP), which have laid the foundation for photonic integrated circuits (PICs) used in data centers and optical communication systems. In contrast, the epitaxial growth of emerging ultrawide-bandgap (UWBG) semiconductors and the exploration of their potential for photonic applications remain an active area of research. This review summarizes recent progress in the epitaxial growth, optical properties, and photonic applications of three representative UWBG semiconductors: gallium oxide (Ga2O3), hexagonal boron nitride (hBN), and scandium aluminum nitride (ScAlN). For each material, we review state-of-the-art epitaxial growth techniques, optical properties across linear, nonlinear, and quantum optical regimes, and unique application opportunities that arise from these properties. This review aims to provide a timely broadband resource for researchers interested in advancing the field of epitaxial UWBG semiconductors for photonics.
Mitigation of self-heating in AlGaN/GaN HEMTs using transferred LPCVD-grown h-BN Cheng Chang, Kad Dokwan Kook, Chenyang Lin, Xiang Zhang, Yuetong Yang, et al. Applied Physics Letters, 2025 With the increasing power density of GaN-based power devices, the self-heating effect has become a significant bottleneck, impacting device reliability and performance, which makes effective thermal management essential. Hexagonal boron nitride (h-BN), with its high thermal conductivity and excellent electrical insulation, offers a promising solution for heat dissipation. In this Letter, we demonstrate that the transferred low-pressure chemical vapor deposition-grown h-BN effectively mitigates self-heating in AlGaN/gallium nitride high electron mobility transistors. All 12 tested devices showed increased current after BN transfer. The average current density in the saturation region improved from 819 to 924 mA/mm, and the current retention rose from 89% to 98%. Thermo-reflectance measurements revealed a significant reduction in channel temperature from 179 to 115 °C under a power density of 21 W/mm. The improvement is attributed to the high in-plane thermal conductivity of h-BN, which is proven by the hotspot models. This approach shows promise as a practical method to reduce self-heating and enhance the thermal reliability of GaN-based power transistors.
Design of a Microprocessors and Microcontrollers Laboratory Course Addressing Complex Engineering Problems and Activities Fahim Hafiz, Md Jahidul Hoq Emon, Md Abid Hossain, Md. Saddam Hossain Mukta, Salekul Islam, et al. Computer Applications in Engineering Education, 2025 This paper proposes a novel curriculum for the microprocessors and microcontrollers laboratory course. The proposed curriculum blends structured laboratory experiments with an open‐ended project phase, addressing complex engineering problems and activities. Microprocessors and microcontrollers are ubiquitous in modern technology, driving applications across diverse fields. To prepare future engineers for Industry 4.0, effective educational approaches are crucial. The proposed lab enables students to perform hands‐on experiments using advanced microprocessors and microcontrollers while leveraging their acquired knowledge by working in teams to tackle self‐defined complex engineering problems that utilize these devices and sensors, often used in the industry. Furthermore, this curriculum fosters multidisciplinary learning and equips students with problem‐solving skills that can be applied in real‐world scenarios. With recent technological advancements, traditional microprocessors and microcontrollers curricula often fail to capture the complexity of real‐world applications. This curriculum addresses this critical gap by incorporating insights from experts in both industry and academia. It trains students with the necessary skills and knowledge to thrive in this rapidly evolving technological landscape, preparing them for success upon graduation. The curriculum integrates project‐based learning, where students define complex engineering problems for themselves. This approach actively engages students, fostering a deeper understanding and enhancing their learning capabilities. Statistical analysis shows that the proposed curriculum significantly improves student learning outcomes, particularly in their ability to formulate and solve complex engineering problems, as well as engage in complex engineering activities.
Integration of IoT, Machine Learning, and Sensors for Intelligent Environmental Monitoring and Agricultural Development Md Jahidul Hoq Emon, Sheikh Munim Hussain, Azazul Islam, Shafin Shadman Ahmed Journal of Computer Networks and Communications, 2025 This paper presents an integrated framework for intelligent agricultural monitoring and development by combining Internet of Things (IoT) technology, machine learning algorithms, sensor networks and custom hardware design. A comprehensive system was developed using environmental sensors including DHT11, soil moisture probes, BMP180 pressure modules, MQ‐4 gas detectors, rain detection sensors and HC‐SR04 ultrasonic modules, interfaced via custom‐designed printed circuit boards (PCBs) fabricated using Proteus software. NodeMCU ESP8266, ESP32 DevKit and ESP32‐CAM microcontrollers served as the hardware backbone for real‐time data acquisition, wireless transmission, and image capture. Collected sensor data were transmitted to cloud platforms through Adafruit IO for remote visualization and analysis. Machine learning models, including Random Forest and XGBoost classifiers, were trained on features extracted from VGG16‐based image processing to classify plant health conditions with high accuracy. Intelligent irrigation control was achieved through autonomous decision‐making based on real‐time sensor feedback and environmental conditions, dynamically activating a water pump system. The integration of low‐power hardware, efficient PCB layouts, cloud‐based dashboards, and lightweight machine learning models resulted in a scalable, portable, and cost‐effective smart farming solution. Experimental results validate the system’s capability for accurate environmental monitoring, efficient resource utilization, and intelligent crop management, offering significant potential for sustainable agriculture in resource‐constrained settings.
Gate leakage suppression in p-GaN/AlGaN p-channel transistors via transferred BN gate dielectric for high-temperature operation C Chang, C Lin, S Luo, H Chen, C Qiu, L Lau, Z Zhang, T Li, MJH Emon, ... Applied Physics Letters 128 (20) , 2026 2026
Dual-mode CMOS-compatible optically tunable plasmonic sensor with symmetrical cavity for simultaneous and independent monitoring of pressure and temperature deviations from … R Rahad, JD Joy, MS Rahman, MJH Emon, R Rahad, MK Mahadi Surfaces and Interfaces, 108325 , 2025 2025
Highly sensitive temperature sensor based on tunable stoichiometric alternative plasmonic material using multiple thermo-responsive analytes MS Rahman, R Rahad, MJH Emon, R Rahad Measurement, 119127 , 2025 2025 Citations: 3
Refractory Transition Metal Nitride-Based CMOS-Compatible Plasmonic Sensor for Brain Tissue Differentiation and Tumor Detection MS Rahman, JD Joy, R Rahad, MH Chowdhury, MI Reja, A Chowdhury, ... IEEE Transactions on Components, Packaging and Manufacturing Technology , 2025 2025
Ultrawide bandgap semiconductors for photonic applications: recent advances in epitaxial Ga2O3, hBN, and ScAlN T Li*, MJH Emon*, R Rahad*, A Chatterjee*, V Dalakoti*, J Liu*, H Yu*, ... Optical Materials Express 15 (10), 2383-2436 , 2025 2025 Citations: 3
Mitigation of self-heating in AlGaN/GaN HEMTs using transferred LPCVD-grown h-BN C Chang, KD Kook, C Lin, X Zhang, Y Yang, S Luo, Z He, T Li, M Xu, ... Applied Physics Letters 127 (8) , 2025 2025 Citations: 6
Phonon transport in pristine and doped plumbene nanoribbon: an equilibrium molecular dynamics study MRI Rafi*, MJH Emon*, MSA Shawkat, S Subrina Physica B: Condensed Matter, 417369 , 2025 2025
Visible Spectrum Topological Photonic Crystal Cavities on the III-N Wide Bandgap Platform T Li, W Wu, C Chang, S Luo, M Xu, Z He, MJH Emon, R Rahad, L Lau, ... CLEO: Fundamental Science, FF125_6 , 2025 2025
Design of a Microprocessors and Microcontrollers Laboratory Course Addressing Complex Engineering Problems and Activities F Hafiz, MJH Emon, MA Hossain, MSH Mukta, S Islam, S Shatabda Computer Applications in Engineering Education 33 (2), e70006 , 2025 2025 Citations: 7
Miniaturized plasmonic sensor with dual-function capability for pressure and flow rate detection at subwavelength levels R Rahad, JD Joy, MS Rahman, MJH Emon, MA Haque IEEE sensors journal 25 (4), 6176-6182 , 2025 2025 Citations: 33
Integration of IoT, Machine Learning, and Sensors for Intelligent Environmental Monitoring and Agricultural Development MJH Emon, SM Hussain, A Islam, SS Ahmed Journal of Computer Networks and Communications 2025 (1), 6611890 , 2025 2025 Citations: 3
An alternative plasmonic material-based CMOS-compatible temperature sensor R Rahad, MM Sobhani, MJH Emon, SMTS Afrid, MK Mahadi, ASM Mohsin, ... Optics Communications 569, 130749 , 2024 2024 Citations: 63
Highly sensitive optically tunable transition metal nitride-based plasmonic pressure sensor with CMOS-compatibility at compact subwavelength dimensions R Rahad, MA Haque, MK Mahadi, ASM Mohsin, MO Faruque, SMTS Afrid, ... IEEE sensors journal 24 (14), 22271-22278 , 2024 2024 Citations: 63
MOST CITED SCHOLAR PUBLICATIONS
An alternative plasmonic material-based CMOS-compatible temperature sensor R Rahad, MM Sobhani, MJH Emon, SMTS Afrid, MK Mahadi, ASM Mohsin, ... Optics Communications 569, 130749 , 2024 2024 Citations: 63
Highly sensitive optically tunable transition metal nitride-based plasmonic pressure sensor with CMOS-compatibility at compact subwavelength dimensions R Rahad, MA Haque, MK Mahadi, ASM Mohsin, MO Faruque, SMTS Afrid, ... IEEE sensors journal 24 (14), 22271-22278 , 2024 2024 Citations: 63
Miniaturized plasmonic sensor with dual-function capability for pressure and flow rate detection at subwavelength levels R Rahad, JD Joy, MS Rahman, MJH Emon, MA Haque IEEE sensors journal 25 (4), 6176-6182 , 2025 2025 Citations: 33
Design of a Microprocessors and Microcontrollers Laboratory Course Addressing Complex Engineering Problems and Activities F Hafiz, MJH Emon, MA Hossain, MSH Mukta, S Islam, S Shatabda Computer Applications in Engineering Education 33 (2), e70006 , 2025 2025 Citations: 7
Mitigation of self-heating in AlGaN/GaN HEMTs using transferred LPCVD-grown h-BN C Chang, KD Kook, C Lin, X Zhang, Y Yang, S Luo, Z He, T Li, M Xu, ... Applied Physics Letters 127 (8) , 2025 2025 Citations: 6
Highly sensitive temperature sensor based on tunable stoichiometric alternative plasmonic material using multiple thermo-responsive analytes MS Rahman, R Rahad, MJH Emon, R Rahad Measurement, 119127 , 2025 2025 Citations: 3
Ultrawide bandgap semiconductors for photonic applications: recent advances in epitaxial Ga2O3, hBN, and ScAlN T Li*, MJH Emon*, R Rahad*, A Chatterjee*, V Dalakoti*, J Liu*, H Yu*, ... Optical Materials Express 15 (10), 2383-2436 , 2025 2025 Citations: 3
Integration of IoT, Machine Learning, and Sensors for Intelligent Environmental Monitoring and Agricultural Development MJH Emon, SM Hussain, A Islam, SS Ahmed Journal of Computer Networks and Communications 2025 (1), 6611890 , 2025 2025 Citations: 3
Gate leakage suppression in p-GaN/AlGaN p-channel transistors via transferred BN gate dielectric for high-temperature operation C Chang, C Lin, S Luo, H Chen, C Qiu, L Lau, Z Zhang, T Li, MJH Emon, ... Applied Physics Letters 128 (20) , 2026 2026
Dual-mode CMOS-compatible optically tunable plasmonic sensor with symmetrical cavity for simultaneous and independent monitoring of pressure and temperature deviations from … R Rahad, JD Joy, MS Rahman, MJH Emon, R Rahad, MK Mahadi Surfaces and Interfaces, 108325 , 2025 2025
Refractory Transition Metal Nitride-Based CMOS-Compatible Plasmonic Sensor for Brain Tissue Differentiation and Tumor Detection MS Rahman, JD Joy, R Rahad, MH Chowdhury, MI Reja, A Chowdhury, ... IEEE Transactions on Components, Packaging and Manufacturing Technology , 2025 2025
Phonon transport in pristine and doped plumbene nanoribbon: an equilibrium molecular dynamics study MRI Rafi*, MJH Emon*, MSA Shawkat, S Subrina Physica B: Condensed Matter, 417369 , 2025 2025
Visible Spectrum Topological Photonic Crystal Cavities on the III-N Wide Bandgap Platform T Li, W Wu, C Chang, S Luo, M Xu, Z He, MJH Emon, R Rahad, L Lau, ... CLEO: Fundamental Science, FF125_6 , 2025 2025