Bijoy Goswami

@aec.ac.in

Asst. Professor
Assam Engineering College

RESEARCH, TEACHING, or OTHER INTERESTS

Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Engineering
184

Scholar Citations

5

Scholar h-index

4

Scholar i10-index

RECENT SCHOLAR PUBLICATIONS

  • Design and Simulation of Broken Gate TFET and its RF Applications
    KA Singha, A Singha, S Brahma, K Chutia, B Goswami
    2025 Joint International Conference on Digital Arts, Media and Technology … , 2025
    2025
  • Dual Source SOI TFET for Inverter Applications
    AD Bharali, B Sarma, R Paul, T Nath, R Kalita, DD Misra, B Goswami
    in Sustainable Development, Innovation and Green Technology (ICASDIGT-2024), 217 , 2025
    2025
  • A Source-Drain Engineering Di-Electrically Modulated Double Gate TFET Based Label-Free Biosensor
    A Bhattacharya, B Goswami, NBD Choudhury
    TENCON 2024-2024 IEEE Region 10 Conference (TENCON), 628-631 , 2024
    2024
  • Impact of Working Temperature on the I ON /I OFF Ratio of a Hetero Step‐Shaped Gate TFET With Improved …
    B Goswami, SJ Sengupta, AJ Sarmah, NBD Choudhury
    Nanodevices for Integrated Circuit Design, 83-91 , 2023
    2023
  • Gate Centric Extended Source SOI TFET
    B Goswami, R Kalita, SK Sarkar
    ADBU Journal of Engineering Technology 12 (2) , 2023
    2023
  • Simulation and analytical modeling of various nano TFET structures for performance improvement and validation with circuits
    B Goswami
    Jadavpur university, Kolkata, West Bengal , 2023
    2023
  • A Noise Immune Double Suspended Gate MOSFET for Ultra Low-Power Applications
    SJ Sengupta, B Goswami, P Das, SK Sarkar
    Silicon 14 (10), 5091-5101 , 2022
    2022
    Citations: 3
  • Noise immune dielectric modulated dual trench transparent gate engineered MOSFET as a label free biosensor: proposal and investigation
    D Sen, A De, B Goswami, S Shee, SK Sarkar
    Journal of Computational Electronics 20 (6), 2594-2603 , 2021
    2021
    Citations: 19
  • A Noise Immune Double Suspended Gate MOSFET for Ultra Low-Power Applications. Silicon (2021)
    SKS Savio Jay Sengupta, Bijoy Goswami, Pritam Das
    Silicon 2021 , 2021
    2021
  • Trapezoidal Channel Double Gate Tunnel FET Suitable for better Scalability, Speed and Low Power Application
    B Goswami, P Das, A Roy, SJ Sengupta, SK Sarkar
    2021 Devices for Integrated Circuit (DevIC), 260-265 , 2021
    2021
    Citations: 1
  • Validation of input/output characteristics of symmetrical double source tfet device
    B Goswami, SJ Sengupta, W Reja, P Das, SK Sarkar
    2021 Devices for Integrated Circuit (DevIC), 256-259 , 2021
    2021
    Citations: 2
  • Performance Evaluation of a Novel Channel Engineered Junctionless Double-Gate MOSFET for Radiation Sensing and Low-Power Circuit Application
    D Sen, B Goswami, A Dey, SK Sarakar
    Electrical and Electronic Devices, Circuits and Materials, 81-98 , 2021
    2021
  • Performance evaluation of dielectrically modulated extended gate single cavity InGaAs/Si HTFET based label-free biosensor considering non-ideal issues
    S Mukhopadhyay, D Sen, B Goswami, SK Sarkar
    IEEE Sensors Journal 21 (4), 4739-4746 , 2020
    2020
    Citations: 100
  • Designing Memristor-Based Timing Circuits and Performance Comparison with CMOS Counterparts
    A Jana, D Bhattacharjee, K Kumari, A Dey, B Goswami, SK Sarkar
    Smart Trends in Computing and Communications: Proceedings of SmartCom 2020 … , 2020
    2020
  • Room Temperature Pt-Modified WO 3 /p–Si Film Gas Sensor for Detection of Methanol
    A Dey, K Kumari, A Jana, B Goswami, P Nandi, SK Sarkar
    Smart Trends in Computing and Communications: Proceedings of SmartCom 2020 … , 2020
    2020
    Citations: 2
  • Room Temperature Pt-Modified WO3/p-Si Film Gas Sensor for Detection
    A Dey, K Kumari, A Jana, B Goswami, P Nandi
    Smart Trends in Computing and Communications: Proceedings of SmartCom 2020, 201 , 2020
    2020
  • A Novel Approach for RFID-Based Smart EVM System
    D Sen, SJ Sengupta, A Sharma, W Reja, B Goswami, SK Sarkar
    Advances in Electrical Control and Signal Systems: Select Proceedings of … , 2020
    2020
  • Impact of trapezoidal channel in double-gate tunnel field effect transistor on ambipolar conduction for ultra low-power application
    A Roy, B Goswami, U Dey, D Gayen, W Reja, SK Sarkar
    2020 17th International Conference on Electrical Engineering/Electronics … , 2020
    2020
    Citations: 3
  • Impact of self-heating and nano-gap filling factor on AlGaAs/GaAs junction-less DG-MOSFET based biosensor for early stage diagnostics
    D Sen, B Goswami, A Dey, P Saha, SK Sarkar
    2020 IEEE Region 10 Symposium (TENSYMP), 662-665 , 2020
    2020
    Citations: 8
  • The Hypothesis of Two-Sources on TFET’s Ambipolar Current and its Quantum Confinement Effect
    B Goswami, K Naskar, A Day, A Jana, SK Sarkar
    2020 8th International Electrical Engineering Congress (iEECON), 1-4 , 2020
    2020
    Citations: 1

MOST CITED SCHOLAR PUBLICATIONS

  • Performance evaluation of dielectrically modulated extended gate single cavity InGaAs/Si HTFET based label-free biosensor considering non-ideal issues
    S Mukhopadhyay, D Sen, B Goswami, SK Sarkar
    IEEE Sensors Journal 21 (4), 4739-4746 , 2020
    2020
    Citations: 100
  • Noise immune dielectric modulated dual trench transparent gate engineered MOSFET as a label free biosensor: proposal and investigation
    D Sen, A De, B Goswami, S Shee, SK Sarkar
    Journal of Computational Electronics 20 (6), 2594-2603 , 2021
    2021
    Citations: 19
  • Demonstration of T-shaped channel tunnel field-effect transistors
    B Goswami, D Bhattachariee, DK Dash, A Bhattacharya, SK Sarkar
    2018 2nd international conference on electronics, materials engineering … , 2018
    2018
    Citations: 15
  • Analytical modelling and simulation of drain doping engineered splitted drain structured TFET and its improved performance in subduing ambipolar effect
    D Bhattacharjee, B Goswami, DK Dash, A Bhattacharya, SK Sarkar
    IET Circuits, Devices & Systems 13 (6), 888-895 , 2019
    2019
    Citations: 13
  • Impact of self-heating and nano-gap filling factor on AlGaAs/GaAs junction-less DG-MOSFET based biosensor for early stage diagnostics
    D Sen, B Goswami, A Dey, P Saha, SK Sarkar
    2020 IEEE Region 10 Symposium (TENSYMP), 662-665 , 2020
    2020
    Citations: 8
  • Analytical Modeling and Simulation of Low Power Salient Source Double Gate TFET
    B Goswami, D Basak, A Bhattacharya, K Kaur, S Bhowmick, SK Sarkar
    2019 Devices for Integrated Circuit (DevIC), 206-210 , 2019
    2019
    Citations: 4
  • A Noise Immune Double Suspended Gate MOSFET for Ultra Low-Power Applications
    SJ Sengupta, B Goswami, P Das, SK Sarkar
    Silicon 14 (10), 5091-5101 , 2022
    2022
    Citations: 3
  • Impact of trapezoidal channel in double-gate tunnel field effect transistor on ambipolar conduction for ultra low-power application
    A Roy, B Goswami, U Dey, D Gayen, W Reja, SK Sarkar
    2020 17th International Conference on Electrical Engineering/Electronics … , 2020
    2020
    Citations: 3
  • Drain-Doping Engineering and its Influence on Device Output Characteristics and Ambipolar Conduction on a Splitted-Drain TFET Model
    B Goswami, D Bhattacharjee, A Bhattacharya, SK Sarkar
    Advances in Communication, Devices and Networking, 21-27 , 2019
    2019
    Citations: 3
  • Simulation Modelling and Study on the Impacts of Substrate Concentration and Gate Work Function in MOSFET having Doped-Pocket Substrate
    P Saha, B Goswami
    2018 International Conference on Computing, Power and Communication … , 2018
    2018
    Citations: 3
  • Validation of input/output characteristics of symmetrical double source tfet device
    B Goswami, SJ Sengupta, W Reja, P Das, SK Sarkar
    2021 Devices for Integrated Circuit (DevIC), 256-259 , 2021
    2021
    Citations: 2
  • Room Temperature Pt-Modified WO 3 /p–Si Film Gas Sensor for Detection of Methanol
    A Dey, K Kumari, A Jana, B Goswami, P Nandi, SK Sarkar
    Smart Trends in Computing and Communications: Proceedings of SmartCom 2020 … , 2020
    2020
    Citations: 2
  • A Source Pocket Doping in PNPN-DG TFET to Preclude Ambipolar Current–Two Dimensional Simulation
    B Goswami, LK Barman, A Jana, A Day, W Reja, SK Sarkar
    2020 8th International Electrical Engineering Congress (IEECON), 1-4 , 2020
    2020
    Citations: 2
  • Implementation of a doped pocket region in order to enhance the device performance of MOSFET
    P Saha, B Goswami
    Advances in Communication, Devices and Networking: Proceedings of ICCDN 2018 … , 2019
    2019
    Citations: 2
  • Trapezoidal Channel Double Gate Tunnel FET Suitable for better Scalability, Speed and Low Power Application
    B Goswami, P Das, A Roy, SJ Sengupta, SK Sarkar
    2021 Devices for Integrated Circuit (DevIC), 260-265 , 2021
    2021
    Citations: 1
  • The Hypothesis of Two-Sources on TFET’s Ambipolar Current and its Quantum Confinement Effect
    B Goswami, K Naskar, A Day, A Jana, SK Sarkar
    2020 8th International Electrical Engineering Congress (iEECON), 1-4 , 2020
    2020
    Citations: 1
  • A Novel Double Source TFET for Low Power Application
    B Goswami, A Bhattacharya, K Kumari, P Das, W Reja, SK Sarkar
    2019 14th Conference on Industrial and Information Systems (ICIIS), 215-219 , 2019
    2019
    Citations: 1
  • Implementation of L-Shaped Dielectric Double Metal Dual-Gate TFET Toward Improved Performance Characteristics and Reduced Ambipolarity
    B Goswami, S Bhowmick, A Haldar, G Paul, D Basak, SK Sarkar
    Information, Photonics and Communication: Proceedings of Second National … , 2019
    2019
    Citations: 1
  • Reduction of Ambipolar Conduction in Centrally Aligned PNPN-DG TFET
    B Goswami, D Basak, K Kaur, A Bhattacharya, S Bhowmick, SK Sarkar
    2019 16th International Conference on Electrical Engineering/Electronics … , 2019
    2019
    Citations: 1
  • Design and Simulation of Broken Gate TFET and its RF Applications
    KA Singha, A Singha, S Brahma, K Chutia, B Goswami
    2025 Joint International Conference on Digital Arts, Media and Technology … , 2025
    2025