Abdelkader Djelloul
@crtse.dz
Researcher / CRTSE
Dr. A. Djelloul has completed his HDR, PhD and Magister in physics from the University of Oran (USTO-MB), Algeria. Currently, he is working as a Research Professor in the Research Center in Semiconductors Technology for Energetic (CRTSE), Algiers, Algeria. He has wide experience in Research and Academia concerning "Material Characterization, Nanomaterials, Thin Films and Nanotechnology, Solar cells, Silicon, Laser, Deposition Methods ...». He has published more than 30 articles and presented many papers at reputed national and international conferences (50 conference proceedings). He is a member of many scientific projects, several academic societies and organizations. He is the Principal Guest Editor of several Special Issues in the International Journal of Current Materials Science. He is also an Associate Editorial Board Member, Editorial Board "Section Editor", Editorial Board Member and Reviewer of many international journals. From 2014 to 2024, he had been invited to review over
RESEARCH, TEACHING, or OTHER INTERESTS
Materials Science, Surfaces, Coatings and Films, Renewable Energy, Sustainability and the Environment, Process Chemistry and Technology
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
M. Ayachi, F. Ayad, A. Djelloul, S. Sali, S. Anas, M. Guezzoul, L. Benharrat, L. Zougar, and S. Kermadi
Springer Science and Business Media LLC
M. A. Bouacheria, , A. Djelloul, L. Benharrat, M. Adnane, , , and
Sumy State University
M.A. Bouacheria, A. Djelloul, L. Benharrat, M. Adnane, and H. Bencherif
Institute of Physics, Polish Academy of Sciences
Sidi Mohammed Merah, Yamna Bakha, and Abdelkader Djelloul
Springer Science and Business Media LLC
T. Seddik, B. Rezini, K. Djelid, Bakhtiar Ul Haq, Se-Hun Kim, M. Batouche, Shah Fahad, A. Djelloul, and G. Yumnam
Elsevier BV
Yamna Bakha, Sidi Mohammed Merah, Hammouche Khales, Mostefa Kameche, and Abdelkader Djelloul
Springer Science and Business Media LLC
B. Labdelli, , A. Djelloul, L. Benharrat, A. Boucheham, H. Mazari, R. Chalal, A. Manseri, , ,et al.
Sumy State University
B. Benmazouza, , T. Sahraoui, M. Adnane, N. Hamamousse, A. Djelloul, Y. Larbah, L. Benharrat, , ,et al.
Sumy State University
F. Bechiri, A. Djelloul, and M. Zerdali
Springer Science and Business Media LLC
A. Bouadi, , H. Naim, A. Djelloul, Y. Benkrima, R. Fares, , , , and
Virtual Company of Physics
The present work aims to improve the power and the conversion efficiency of solar cells, using the PC1D simulator, to study the performances of the solar cells based on (InGaN). The paper focuses first on optimization of the technological and geometrical parameters such as doping and the thickness of the layers to investigate their influence on the conversion efficiency of these structures. Then, the paper evaluates the efficiency η for the solar cell with and without Anti-reflection coating ARC on textured surfaces to achieve a final increase of 22.5% of conversion efficiency compared to InGaN standard solar cells.
M. A. Bouacheria, A. Djelloul, M. Adnane, Y. Larbah, and L. Benharrat
Springer Science and Business Media LLC
M. Ayachi, F. Ayad, A. Djelloul, L. Benharrat, and S. Anas
Pleiades Publishing Ltd
M. Melouki, , H. F. Mehnane, A. Djelloul, Y. Larbah, M. Adnane, , , , and
Sumy State University
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N. Houri, , A. Djelloul, M. Adnane, , and
Sumy State University
E. Chater-Sari, , C. Zegadi, A. Djelloul, S. Rodane, M. Sellami, M. Kameche, N. Bettahar, , ,et al.
Sumy State University
A Moussi, A Djelloul, S Meziani, K Bendimrad, L Benharrat, S Chaouchi, K Bourai, and A Noukaz
IOP Publishing
Abstract Laser-assisted diffusion of phosphorus dopants has been investigated to realize selective emitters on mc-Si wafers. In this paper, we studied, in the presence of PSG, the effect of laser speed and power doping parameters on the sheet resistance RSq variation as a function of selective emitter formation. Four point-probe (FPP) measurements showed that 5.5–10 W with speed 100–1500 mm s−1 are, respectively, the best power values to form a selective emitter with 20–40 Ω/□ typical values. Electrochemical Capacitance-Voltage (ECV) results showed that dopant concentration and junction depth increased with decreasing scan speed, resulting in lower sheet resistances. Thus, the greater the difference between the concentration of starting phosphorus and that created by laser treatment, the smaller the square RSq will be. Scanning Electron Microscopy (SEM) images demonstrated more pronounced patterns of laser ablation when the power is high and/or the scanning speed is low.
Mohamed Issam Ziane, Djamel Ouadjaout, Meftah Tablaoui, Rachida Nouri, Wafia Zermane, Abdelkader Djelloul, Hamza Bennacer, Abderrahmane Mokrani, Moufdi Hadjab, and Hamza Abid
Springer Science and Business Media LLC
N. Sebaa, , M. Adnane, A. Djelloul, A. Abderrahmane, T. Sahraoui, , , , and
Sumy State University
1 Département de Technologie des Matériaux, Faculté de Physique, Université des Sciences et de la Technologie d’Oran Mohamed Boudiaf USTO-MB, BP 1505, El M'naouer, 31000 Oran, Algérie 2 Centre de développement des technologies avancées (CDTA), cité 20 Aout 1956 Baba Hassen, Alger, Algérie 3 Centre de Recherche en Technologie des Semi-Conducteurs pour l’Energétique ‘CRTSE’ 02 Bd Frantz Fanon, BP: 140, 7 Merveilles, Alger, Algérie
A. Djelloul, , Y. Larbah, M. Adnane, B. Labdelli, M. I. Ziane, A. Manseri, A. Messaoud, , ,et al.
Sumy State University
1 Département de Technologie des Matériaux, Faculté de Physique, Université des Sciences et de la Technologie d’Oran Mohamed Boudiaf USTO-MB, BP 1505, El M'naouer, 31000 Oran Algérie 2 Centre de Recherche en Technologie des Semi-Conducteurs pour l’Energétique ‘CRTSE’, 02 Bd Frantz Fanon, BP 140, 7 Merveilles, Alger, Algérie 3 Spectrometry Department, Nuclear Technical Division, Nuclear Research Center of Algiers, 2 Bd., Frantz Fanon, BP 399, Algiers 16000, Algeria
Abderrahmane Moussi, Linda Mahiou, Mourad Mebarki, Abdelkader Djelloul, Samir Meziani, Abdelkader Noukaz, and Kamel Bourai
IEEE
A simple method for metal deposition on solar cells surface has been developed. Nickel is used as contact barrier to copper and permits low contact resistance on n+ silicon Nickel chloride is used to deposit contacts on front surface. The pattern is obtained by laser ablation on silicon nitride. Laser treatment permits also to get a selective emitter n++ of 30Ω/ □ sheet resistance on which Nickel is plated. Different temperatures are used to cure Nickel deposited on Silicon and contact resistance is measured. NiSi phase is investigated using DRX patterns and FTIR spectra. SIMS analysis evidenced the contact barrier of thid phase to copper diffusion. The originality of this work is relative to the solution and the route used.
A. Djelloul, , M. Adnane, Y. Larbah, M. Zerdali, C. Zegadi, A. Messaoud, , , ,et al.
Sumy State University
is an essential part of the article metadata. The Fourier transform infrared (FTIR) measurements were undertaken to confirm the formation of the CdS thin films. Fig. 5 show the FTIR spectrum in the frequency range (450-4000 cm – 1) of CdS thin film after annealing at 400 °C. It can be seen that the sample shows a weak characteristic vibrations of cadmium sulfide located at 635.54 cm – 1, others peaks are attributed to the formation of CdS nanoparticles. Fig. 5 – FTIR spectrum of CdS thin film after annealing at 400 °C 4.5 Secondary Ion Mass Spectrometry (SIMS) The SIMS profile of CdS thin films are shown in Fig. 6. The apparently high signal of 28Si, 114Cd, 16O and 1H and 32S in the CdS film is due to the relative sensitivity factor (RSF) which, begins to decrease with depth. The presence of 114Cd and 32S in SIMS profiles with a high signal at the interface can be ascribed to the possible formation of cadmium sulphide (CdS); this result confirms the presence of Cd-S band observed on the FTIR spectra. 4.6 Optical Transmissions An important tool for searching and structuring of scientific and technical information is the keywords that are pointed in the article. The optical properties of the films deposited on glass substrates were determined from the transmission and reflection measurements in the range 2001100 nm. Fig. 6 – SIMS profile of CdS thin films elaborated by chemical bath deposition (CBD) Fig. 7 shows the transmission spectra of as deposited and annealed CdS films. The annealing temperatures were 300, 400, 500 °C with one-hour annealing time; after each step the optical transmittance of the sample was registered and next annealing was made with the same sample. The results show that the optical transmission is more than 75 % in the visible range for as deposited and annealed films. The changes of transmittances are associated to the increase measured over the visible range. Fig. 7 – Transmittance spectra of CdS thins films: (a) – as-deposited; (b)-(d) – annealed (at 300, 400 and 500 °C) The band gap energy (Eg) of the films is derived by using the relation [20, 21]:
A. Djelloul, A. Moussi, K. Bendimrad, S. Meziani, M. Mebarki, L. Mahiou, K. Bourai, and A. Noukaz
IEEE
In the field of solar energy, in particular for solar cells, the cost and efficiency of the cell is critical. To do this, we will realize a selective emitter on multi-crystalline silicon plates. This work will focus on three parts: The first part will present the experimental approach to achieve the selective emitter laser. The second part will list the different characterizations performed on the laser-treated plates. In the last part, we will present the overall results. Finally a conclusion provides a summary of results and a perspective of work.