Ellapu Bhanu Prakash

@nitmz.ac.in

Full Time Regular Scholar and Electronics and Communication Engineering
National Institute of Technology Mizoram

RESEARCH, TEACHING, or OTHER INTERESTS

Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering
28

Scholar Citations

3

Scholar h-index

RECENT SCHOLAR PUBLICATIONS

  • Investigating the Effect of AlGaN Back Barrier in Buffer Free AlGaN/GaN HEMTs with Stacked HfO 2 /SiN Passivation for High Frequency Applications
    AP Dadi, EB Prakash, V Maitra, T Ghose, A Ray, S Bordoloi
    Semiconductors 60 (5), 469-482 , 2026
    2026
  • Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit
    EB Prakash, AP Dadi, V Maitra, T Ghose, A Ray, S Bordoloi
    Materials Science and Engineering: B 327, 119223 , 2026
    2026
    Citations: 1
  • Design and Analysis of High-k Stacked Nanosheet Gate-All-Around FET for Improved Performance
    J Batakala, KK Kinnera, K Sarala, EB Prakash
    2026 International Conference on Smart Electronic Devices and Intelligent … , 2026
    2026
  • Investigation of the Effects of AlN Cap Thickness and Field Plate Length on Breakdown and RF Performance of AlGaN/GaN HEMTs
    EB Prakash, A Ray, S Bordoloi
    2026 6th International Conference on Trends in Material Science and … , 2026
    2026
  • Understanding the Effect of β-Ga 2 O 3 Buffer on Breakdown Phenomenon and Current Collapse in GaN HEMTs
    EB Prakash, T Ghose, V Mustafa, P Srinu, A Ray, S Bordoloi
    2026 International Conference on Electronics and Renewable Systems (ICEARS … , 2026
    2026
  • Exploring the Resilience Nature of AlN Cap Layer in AlGaN/GaN HEMT Under Thermal Conditions
    EB Prakash, A Ray, S Bordoloi
    2026 39th International Conference on VLSI Design & 25th International … , 2026
    2026
  • Design and optimization of a buffer-free AlGaN/GaN HEMT with dielectric stack engineering for high power and frequency applications
    AP Dadi, EB Prakash, V Maitra, A Ray, S Bordoloi
    AEU-International Journal of Electronics and Communications 204, 156102 , 2026
    2026
    Citations: 1
  • Performance Enhancement in Double-Gate TFETs Using a Gallium Antimonide Source Pocket
    T Ghose, EB Prakash, AP Dadi, V Maitra, A Ray, S Bordoloi
    2025 10th International Conference on Smart Structures and Systems (ICSSS), 1-6 , 2025
    2025
  • Enhancing Breakdown Voltage and Switching Performance in AlGaN/GaN HEMTs via GaN Cap and Field Plate Co-Design
    EB Prakash, AP Dadi, V Maitra, T Ghose, P Barman, A Ray, S Bordoloi
    Semiconductors 59 (12), 1328-1342 , 2025
    2025
    Citations: 2
  • Dielectric Passivation Strategies for Enhanced Performance and Reliability of AlGaN/GaN HEMTs
    EB Prakash, A Ray, S Bordoloi
    2025 IEEE Silchar Subsection Conference (SILCON), 1-6 , 2025
    2025
  • Optimizing the Design of Non-Linear Power Amplifier Using an Advanced Small-Signal Model for AlGaN/GaN
    V Maitra, AP Dadi, EB Prakash, T Ghose
    Integration of Artificial Intelligence in IoT: Opportunities and Challenges … , 2025
    2025
  • An Advanced Electrothermal Small-Signal Compact Modeling of 250 nm GaN HEMTs Using ASM Methodology
    V Maitra, EB Prakash, AP Dadi, A Ray, S Bordoloi
    TENCON 2025-2025 IEEE Region 10 Conference (TENCON), 106-110 , 2025
    2025
  • Effect of Ge Mole Fraction on Performance Characteristics of Si 1 – x Ge x -based Double Gate Field Effect Transistors
    EB Prakash, B Harini, A Ray, S Bordoloi
    Semiconductors 59 (7), 711-723 , 2025
    2025
    Citations: 2
  • Evaluating the Effect of the Varying Field Plate's Length on the Performance of a GaN HEMT with a Graded AlGaN Back Barrier
    EB Prakash, A Ray, S Bordoloi
    2025 8th International Conference on Trends in Electronics and Informatics … , 2025
    2025
    Citations: 5
  • Investigating the Temperature‐Induced Variations on the DC, Linearity Distortion and Analog/RF Performance of Ge‐Source DG‐TFETs
    EB Prakash, B Harini, A Ray, S Bordoloi
    Advanced Theory and Simulations, e01278 , 2025
    2025
    Citations: 1
  • Effect of buried depth, thickness of channel and gate length on breakdown voltage in algan/gan hemt
    AP Dadi, EB Prakash, V Maitra, A Ray, S Bordoloi
    2024 12th International Conference on Internet of Everything, Microwave … , 2024
    2024
    Citations: 4
  • Optimizing the Design of Non-Linear Power Amplifier Using an Advanced Small-Signal Model for AlGaN/GaN HEMT
    V Maitra, AP Dadi, EB Prakash, T Ghose, A Ray, S Bordoloi
    International Conference on Internet of Things and Connected Technologies … , 2024
    2024
  • Investigation of algan/gan hemt device performance with variation of gan cap layer thickness along with doping concentration
    EB Prakash, V Maitra, AP Dadi, A Ray, S Bordoloi
    2024 15th International Conference on Computing Communication and Networking … , 2024
    2024
    Citations: 7
  • Development of Rectangular Nanosheet GAA-FET with Underlap
    BP Ellapu, RS Dhar
    2023 International Conference on Nanoelectronics, Nanophotonics … , 2023
    2023
  • Pick and Place Robotic Arms Movement Controlled by Android Wirelessly
    EBP Cheepurupalli Krishna Chaitanya, Pillla Likhitha Sri
    International Journal for Research in Applied Science & Engineering … , 2023
    2023
    Citations: 3

MOST CITED SCHOLAR PUBLICATIONS

  • Investigation of algan/gan hemt device performance with variation of gan cap layer thickness along with doping concentration
    EB Prakash, V Maitra, AP Dadi, A Ray, S Bordoloi
    2024 15th International Conference on Computing Communication and Networking … , 2024
    2024
    Citations: 7
  • Evaluating the Effect of the Varying Field Plate's Length on the Performance of a GaN HEMT with a Graded AlGaN Back Barrier
    EB Prakash, A Ray, S Bordoloi
    2025 8th International Conference on Trends in Electronics and Informatics … , 2025
    2025
    Citations: 5
  • Effect of buried depth, thickness of channel and gate length on breakdown voltage in algan/gan hemt
    AP Dadi, EB Prakash, V Maitra, A Ray, S Bordoloi
    2024 12th International Conference on Internet of Everything, Microwave … , 2024
    2024
    Citations: 4
  • Pick and Place Robotic Arms Movement Controlled by Android Wirelessly
    EBP Cheepurupalli Krishna Chaitanya, Pillla Likhitha Sri
    International Journal for Research in Applied Science & Engineering … , 2023
    2023
    Citations: 3
  • Enhancing Breakdown Voltage and Switching Performance in AlGaN/GaN HEMTs via GaN Cap and Field Plate Co-Design
    EB Prakash, AP Dadi, V Maitra, T Ghose, P Barman, A Ray, S Bordoloi
    Semiconductors 59 (12), 1328-1342 , 2025
    2025
    Citations: 2
  • Effect of Ge Mole Fraction on Performance Characteristics of Si 1 – x Ge x -based Double Gate Field Effect Transistors
    EB Prakash, B Harini, A Ray, S Bordoloi
    Semiconductors 59 (7), 711-723 , 2025
    2025
    Citations: 2
  • Study of nanosheet performance by varying the aspect ratio
    EB Prakash, RS Dhar
    2023 World Conference on Communication & Computing (WCONF), 1-5 , 2023
    2023
    Citations: 2
  • Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit
    EB Prakash, AP Dadi, V Maitra, T Ghose, A Ray, S Bordoloi
    Materials Science and Engineering: B 327, 119223 , 2026
    2026
    Citations: 1
  • Design and optimization of a buffer-free AlGaN/GaN HEMT with dielectric stack engineering for high power and frequency applications
    AP Dadi, EB Prakash, V Maitra, A Ray, S Bordoloi
    AEU-International Journal of Electronics and Communications 204, 156102 , 2026
    2026
    Citations: 1
  • Investigating the Temperature‐Induced Variations on the DC, Linearity Distortion and Analog/RF Performance of Ge‐Source DG‐TFETs
    EB Prakash, B Harini, A Ray, S Bordoloi
    Advanced Theory and Simulations, e01278 , 2025
    2025
    Citations: 1
  • Investigating the Effect of AlGaN Back Barrier in Buffer Free AlGaN/GaN HEMTs with Stacked HfO 2 /SiN Passivation for High Frequency Applications
    AP Dadi, EB Prakash, V Maitra, T Ghose, A Ray, S Bordoloi
    Semiconductors 60 (5), 469-482 , 2026
    2026
  • Design and Analysis of High-k Stacked Nanosheet Gate-All-Around FET for Improved Performance
    J Batakala, KK Kinnera, K Sarala, EB Prakash
    2026 International Conference on Smart Electronic Devices and Intelligent … , 2026
    2026
  • Investigation of the Effects of AlN Cap Thickness and Field Plate Length on Breakdown and RF Performance of AlGaN/GaN HEMTs
    EB Prakash, A Ray, S Bordoloi
    2026 6th International Conference on Trends in Material Science and … , 2026
    2026
  • Understanding the Effect of β-Ga 2 O 3 Buffer on Breakdown Phenomenon and Current Collapse in GaN HEMTs
    EB Prakash, T Ghose, V Mustafa, P Srinu, A Ray, S Bordoloi
    2026 International Conference on Electronics and Renewable Systems (ICEARS … , 2026
    2026
  • Exploring the Resilience Nature of AlN Cap Layer in AlGaN/GaN HEMT Under Thermal Conditions
    EB Prakash, A Ray, S Bordoloi
    2026 39th International Conference on VLSI Design & 25th International … , 2026
    2026
  • Performance Enhancement in Double-Gate TFETs Using a Gallium Antimonide Source Pocket
    T Ghose, EB Prakash, AP Dadi, V Maitra, A Ray, S Bordoloi
    2025 10th International Conference on Smart Structures and Systems (ICSSS), 1-6 , 2025
    2025
  • Dielectric Passivation Strategies for Enhanced Performance and Reliability of AlGaN/GaN HEMTs
    EB Prakash, A Ray, S Bordoloi
    2025 IEEE Silchar Subsection Conference (SILCON), 1-6 , 2025
    2025
  • Optimizing the Design of Non-Linear Power Amplifier Using an Advanced Small-Signal Model for AlGaN/GaN
    V Maitra, AP Dadi, EB Prakash, T Ghose
    Integration of Artificial Intelligence in IoT: Opportunities and Challenges … , 2025
    2025
  • An Advanced Electrothermal Small-Signal Compact Modeling of 250 nm GaN HEMTs Using ASM Methodology
    V Maitra, EB Prakash, AP Dadi, A Ray, S Bordoloi
    TENCON 2025-2025 IEEE Region 10 Conference (TENCON), 106-110 , 2025
    2025
  • Optimizing the Design of Non-Linear Power Amplifier Using an Advanced Small-Signal Model for AlGaN/GaN HEMT
    V Maitra, AP Dadi, EB Prakash, T Ghose, A Ray, S Bordoloi
    International Conference on Internet of Things and Connected Technologies … , 2024
    2024