Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering
28
Scholar Citations
3
Scholar h-index
RECENT SCHOLAR PUBLICATIONS
Investigating the Effect of AlGaN Back Barrier in Buffer Free AlGaN/GaN HEMTs with Stacked HfO 2 /SiN Passivation for High Frequency Applications AP Dadi, EB Prakash, V Maitra, T Ghose, A Ray, S Bordoloi Semiconductors 60 (5), 469-482 , 2026 2026
Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit EB Prakash, AP Dadi, V Maitra, T Ghose, A Ray, S Bordoloi Materials Science and Engineering: B 327, 119223 , 2026 2026 Citations: 1
Design and Analysis of High-k Stacked Nanosheet Gate-All-Around FET for Improved Performance J Batakala, KK Kinnera, K Sarala, EB Prakash 2026 International Conference on Smart Electronic Devices and Intelligent … , 2026 2026
Investigation of the Effects of AlN Cap Thickness and Field Plate Length on Breakdown and RF Performance of AlGaN/GaN HEMTs EB Prakash, A Ray, S Bordoloi 2026 6th International Conference on Trends in Material Science and … , 2026 2026
Understanding the Effect of β-Ga 2 O 3 Buffer on Breakdown Phenomenon and Current Collapse in GaN HEMTs EB Prakash, T Ghose, V Mustafa, P Srinu, A Ray, S Bordoloi 2026 International Conference on Electronics and Renewable Systems (ICEARS … , 2026 2026
Exploring the Resilience Nature of AlN Cap Layer in AlGaN/GaN HEMT Under Thermal Conditions EB Prakash, A Ray, S Bordoloi 2026 39th International Conference on VLSI Design & 25th International … , 2026 2026
Design and optimization of a buffer-free AlGaN/GaN HEMT with dielectric stack engineering for high power and frequency applications AP Dadi, EB Prakash, V Maitra, A Ray, S Bordoloi AEU-International Journal of Electronics and Communications 204, 156102 , 2026 2026 Citations: 1
Performance Enhancement in Double-Gate TFETs Using a Gallium Antimonide Source Pocket T Ghose, EB Prakash, AP Dadi, V Maitra, A Ray, S Bordoloi 2025 10th International Conference on Smart Structures and Systems (ICSSS), 1-6 , 2025 2025
Enhancing Breakdown Voltage and Switching Performance in AlGaN/GaN HEMTs via GaN Cap and Field Plate Co-Design EB Prakash, AP Dadi, V Maitra, T Ghose, P Barman, A Ray, S Bordoloi Semiconductors 59 (12), 1328-1342 , 2025 2025 Citations: 2
Dielectric Passivation Strategies for Enhanced Performance and Reliability of AlGaN/GaN HEMTs EB Prakash, A Ray, S Bordoloi 2025 IEEE Silchar Subsection Conference (SILCON), 1-6 , 2025 2025
Optimizing the Design of Non-Linear Power Amplifier Using an Advanced Small-Signal Model for AlGaN/GaN V Maitra, AP Dadi, EB Prakash, T Ghose Integration of Artificial Intelligence in IoT: Opportunities and Challenges … , 2025 2025
An Advanced Electrothermal Small-Signal Compact Modeling of 250 nm GaN HEMTs Using ASM Methodology V Maitra, EB Prakash, AP Dadi, A Ray, S Bordoloi TENCON 2025-2025 IEEE Region 10 Conference (TENCON), 106-110 , 2025 2025
Effect of Ge Mole Fraction on Performance Characteristics of Si 1 – x Ge x -based Double Gate Field Effect Transistors EB Prakash, B Harini, A Ray, S Bordoloi Semiconductors 59 (7), 711-723 , 2025 2025 Citations: 2
Evaluating the Effect of the Varying Field Plate's Length on the Performance of a GaN HEMT with a Graded AlGaN Back Barrier EB Prakash, A Ray, S Bordoloi 2025 8th International Conference on Trends in Electronics and Informatics … , 2025 2025 Citations: 5
Investigating the Temperature‐Induced Variations on the DC, Linearity Distortion and Analog/RF Performance of Ge‐Source DG‐TFETs EB Prakash, B Harini, A Ray, S Bordoloi Advanced Theory and Simulations, e01278 , 2025 2025 Citations: 1
Effect of buried depth, thickness of channel and gate length on breakdown voltage in algan/gan hemt AP Dadi, EB Prakash, V Maitra, A Ray, S Bordoloi 2024 12th International Conference on Internet of Everything, Microwave … , 2024 2024 Citations: 4
Optimizing the Design of Non-Linear Power Amplifier Using an Advanced Small-Signal Model for AlGaN/GaN HEMT V Maitra, AP Dadi, EB Prakash, T Ghose, A Ray, S Bordoloi International Conference on Internet of Things and Connected Technologies … , 2024 2024
Investigation of algan/gan hemt device performance with variation of gan cap layer thickness along with doping concentration EB Prakash, V Maitra, AP Dadi, A Ray, S Bordoloi 2024 15th International Conference on Computing Communication and Networking … , 2024 2024 Citations: 7
Development of Rectangular Nanosheet GAA-FET with Underlap BP Ellapu, RS Dhar 2023 International Conference on Nanoelectronics, Nanophotonics … , 2023 2023
Pick and Place Robotic Arms Movement Controlled by Android Wirelessly EBP Cheepurupalli Krishna Chaitanya, Pillla Likhitha Sri International Journal for Research in Applied Science & Engineering … , 2023 2023 Citations: 3
MOST CITED SCHOLAR PUBLICATIONS
Investigation of algan/gan hemt device performance with variation of gan cap layer thickness along with doping concentration EB Prakash, V Maitra, AP Dadi, A Ray, S Bordoloi 2024 15th International Conference on Computing Communication and Networking … , 2024 2024 Citations: 7
Evaluating the Effect of the Varying Field Plate's Length on the Performance of a GaN HEMT with a Graded AlGaN Back Barrier EB Prakash, A Ray, S Bordoloi 2025 8th International Conference on Trends in Electronics and Informatics … , 2025 2025 Citations: 5
Effect of buried depth, thickness of channel and gate length on breakdown voltage in algan/gan hemt AP Dadi, EB Prakash, V Maitra, A Ray, S Bordoloi 2024 12th International Conference on Internet of Everything, Microwave … , 2024 2024 Citations: 4
Pick and Place Robotic Arms Movement Controlled by Android Wirelessly EBP Cheepurupalli Krishna Chaitanya, Pillla Likhitha Sri International Journal for Research in Applied Science & Engineering … , 2023 2023 Citations: 3
Enhancing Breakdown Voltage and Switching Performance in AlGaN/GaN HEMTs via GaN Cap and Field Plate Co-Design EB Prakash, AP Dadi, V Maitra, T Ghose, P Barman, A Ray, S Bordoloi Semiconductors 59 (12), 1328-1342 , 2025 2025 Citations: 2
Effect of Ge Mole Fraction on Performance Characteristics of Si 1 – x Ge x -based Double Gate Field Effect Transistors EB Prakash, B Harini, A Ray, S Bordoloi Semiconductors 59 (7), 711-723 , 2025 2025 Citations: 2
Study of nanosheet performance by varying the aspect ratio EB Prakash, RS Dhar 2023 World Conference on Communication & Computing (WCONF), 1-5 , 2023 2023 Citations: 2
Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit EB Prakash, AP Dadi, V Maitra, T Ghose, A Ray, S Bordoloi Materials Science and Engineering: B 327, 119223 , 2026 2026 Citations: 1
Design and optimization of a buffer-free AlGaN/GaN HEMT with dielectric stack engineering for high power and frequency applications AP Dadi, EB Prakash, V Maitra, A Ray, S Bordoloi AEU-International Journal of Electronics and Communications 204, 156102 , 2026 2026 Citations: 1
Investigating the Temperature‐Induced Variations on the DC, Linearity Distortion and Analog/RF Performance of Ge‐Source DG‐TFETs EB Prakash, B Harini, A Ray, S Bordoloi Advanced Theory and Simulations, e01278 , 2025 2025 Citations: 1
Investigating the Effect of AlGaN Back Barrier in Buffer Free AlGaN/GaN HEMTs with Stacked HfO 2 /SiN Passivation for High Frequency Applications AP Dadi, EB Prakash, V Maitra, T Ghose, A Ray, S Bordoloi Semiconductors 60 (5), 469-482 , 2026 2026
Design and Analysis of High-k Stacked Nanosheet Gate-All-Around FET for Improved Performance J Batakala, KK Kinnera, K Sarala, EB Prakash 2026 International Conference on Smart Electronic Devices and Intelligent … , 2026 2026
Investigation of the Effects of AlN Cap Thickness and Field Plate Length on Breakdown and RF Performance of AlGaN/GaN HEMTs EB Prakash, A Ray, S Bordoloi 2026 6th International Conference on Trends in Material Science and … , 2026 2026
Understanding the Effect of β-Ga 2 O 3 Buffer on Breakdown Phenomenon and Current Collapse in GaN HEMTs EB Prakash, T Ghose, V Mustafa, P Srinu, A Ray, S Bordoloi 2026 International Conference on Electronics and Renewable Systems (ICEARS … , 2026 2026
Exploring the Resilience Nature of AlN Cap Layer in AlGaN/GaN HEMT Under Thermal Conditions EB Prakash, A Ray, S Bordoloi 2026 39th International Conference on VLSI Design & 25th International … , 2026 2026
Performance Enhancement in Double-Gate TFETs Using a Gallium Antimonide Source Pocket T Ghose, EB Prakash, AP Dadi, V Maitra, A Ray, S Bordoloi 2025 10th International Conference on Smart Structures and Systems (ICSSS), 1-6 , 2025 2025
Dielectric Passivation Strategies for Enhanced Performance and Reliability of AlGaN/GaN HEMTs EB Prakash, A Ray, S Bordoloi 2025 IEEE Silchar Subsection Conference (SILCON), 1-6 , 2025 2025
Optimizing the Design of Non-Linear Power Amplifier Using an Advanced Small-Signal Model for AlGaN/GaN V Maitra, AP Dadi, EB Prakash, T Ghose Integration of Artificial Intelligence in IoT: Opportunities and Challenges … , 2025 2025
An Advanced Electrothermal Small-Signal Compact Modeling of 250 nm GaN HEMTs Using ASM Methodology V Maitra, EB Prakash, AP Dadi, A Ray, S Bordoloi TENCON 2025-2025 IEEE Region 10 Conference (TENCON), 106-110 , 2025 2025
Optimizing the Design of Non-Linear Power Amplifier Using an Advanced Small-Signal Model for AlGaN/GaN HEMT V Maitra, AP Dadi, EB Prakash, T Ghose, A Ray, S Bordoloi International Conference on Internet of Things and Connected Technologies … , 2024 2024