Currently working as an Associate Professor, Electronics at Banasthali Vidyapith, Rajasthan.
PhD. in Electronics Engineering from Indian Institute of Technology (ISM), Dhanbad,
Jharkhand, India in 2014 under the guidance of Prof. Jitendra Kumar, Prof & Head, Dept of
Electronics Engineering. Topic: Theoretical Investigation of Quantum dot Infrared
Photodetectors.
EDUCATION
Degree Year University/Institute % of marks
BSc. 1999 Kumaun University, Nainital 66.44
MSc. (Physics) 2001 Kumaun University, Nainital 66.25
M.Tech. (Optoelectronics) 2004 Rajiv Gandhi Prodyogiki Viswavidhyalay/ S.G. S. Inst. of Tech. Indore 79.83
Ph.D. (Electronic Engineering) 2014 Indian Institute of Technology (ISM), Dhanbad
AMIE (Electronics & Telecommunication Engineering ) 2018 Institute of Engineers India, Kolkata 7.7 (CGPA)
Exploring Cs2AgBiBr6 halide double perovskite as a lead-free emissive material for perovskite LEDs Kamal Kumar Jain, Sarita Yadav, Saral K Gupta, C M S Negi Physica Scripta, 2025 Numerical simulations were performed to evaluate the suitability of cesium silver bismuth bromide (Cs 2 AgBiBr 6 ) halide double perovskite as an efficient emissive layer (EML) for perovskite-based LEDs (PeLEDs). The study investigates various hole-injection layer (HIL) materials, revealing their substantial impact on device performance. Hole mobility and energy barriers at the metal/HIL and HIL/EML interfaces are identified as key determinants of optoelectronic efficiency. Among the tested HILs, Cu 2 O delivered the best performance, achieving a maximum EQE of 27.36% and current efficiency (CE) of 51.84 cd A −1 , followed by NiO (EQE: 9.81%, CE: 47.32 cd A −1 ) and CBTS (EQE: 1.14%, CE: 3.96 cd A −1 ), owing to its high hole mobility and balanced carrier injection. HIL thickness was found to have negligible influence on PeLEDs characteristics. Doping-dependent analysis shows that PeLEDs performance declines gradually with acceptor concentration up to 10 18 cm −3 but deteriorates sharply beyond this point, while donor doping enhances performance up to 10 19 cm −3 before Auger recombination becomes dominant. These trends are mainly ascribed to shifts in the recombination zone with doping variation. Additionally, increasing defect density markedly reduces luminance and current efficiency due to enhanced Shockley–Read–Hall (SRH) recombination, which lowers IQE and EQE by promoting non-radiative pathways over radiative recombination. This work provides valuable insights to strengthen research efforts on Pb-free PeLEDs in the field of environmentally friendly optoelectronics.
Synergistic effects of N719 and N3 dyes in DSSCs with gel polymer electrolyte and graphite counter electrode Ritu, Saral Kumar Gupta, C.M.S. Negi Next Materials, 2025 Dye-sensitized solar cells (DSSCs) offer a low-cost and eco-friendly alternative for next-generation photovoltaics, but their efficiency is often limited by the choice of dyes, electrolytes, and counter electrodes. In this work, we demonstrate the synergistic impact of co-sensitization with N719 and N3 dyes on the photovoltaic performance of DSSCs. Unlike conventional DSSCs employing platinum as the counter electrode and liquid electrolytes, pencil graphite was utilized here as a cost-effective and sustainable counter electrode, while a PVDF-HFP-based gel polymer electrolyte prepared via the solution-casting method was employed as the quasi-solid-state electrolyte. UV-Vis absorption spectroscopy revealed broadened and red-shifted absorption for the co-sensitized system, indicating enhanced light harvesting. Furthermore, the co-sensitized dye/TiO 2 film exhibited reduced energetic disorder and a lower density of localized tail states, as evidenced by its lowest Urbach energy. FESEM and EDX confirmed uniform dye loading and improved surface coverage, while Raman spectroscopy indicated stable dye–TiO 2 interactions. Photovoltaic measurements showed that the co-sensitized DSSC achieved the highest PCE of 5.82 %, outperforming single-dye devices (N3: 4.19 %, N719: 3.83 %) due to synergistic spectral coverage, improved electron injection, and suppressed recombination. Electrochemical impedance spectroscopy further corroborated these findings by revealing reduced charge-transfer resistance and improved ionic diffusion in the co-sensitized device. These results demonstrate that combining co-sensitization with a quasi-solid-state electrolyte and a low-cost graphite counter electrode provides an effective pathway toward affordable and sustainable DSSCs • A low-cost, quasi-solid-state DSSC, with pencil graphite CE was developed. • Co-sensitization with N719 and N3 dyes significantly enhanced light harvesting. • The co-sensitized DSSC exhibited the highest PCE (5.82 %). • EIS analysis corelated well with the photovoltaic performance of the DSSCs.
HfO2/SiO2 spacer oxide width optimization for enhanced terahertz performance and short-channel integrity in sub-nm silicon based junctionless dual metal gate-all-around FET architectures: A TCAD approach Shekhar Yadav, Pooja Srivastava, C.M.S. Negi Nano Trends, 2025 This research evaluates the suitability of silicon-based Gate-All-Around Metal Oxide Semiconductor Field Effect Transistor (GAA MOSFET) architectures with HfO 2 /SiO 2 oxide stack spacers for high-frequency applications. Comprehensive analyses of all essential parameters, including transconductance (g m ), unity gain cut-off frequency (f T ), drain conductance (g d ), intrinsic gain (g m /g d ), transconductance efficiency (g m /I D ), Ion to Ioff ratio (I on /I off ), gate capacitance (C gg ), and transfer characteristics, were conducted through rigorous TCAD simulations. To ensure the structure's scalability and demonstrate short-channel immunity, Drain Induced Barrier Lowering (DIBL) analysis was performed. Additionally, subthreshold swing (SS) analysis was conducted to prove the power efficiency of the device. The analyses conducted are crucial for evaluating the characteristics of devices when scaled to the nanoscale dimensions. A spacer oxide, composed of a stack of conventional material silicon dioxide (SiO 2 ) and the high-k material hafnium oxide (HfO 2 ), was incorporated to enhance device performance by improving gate control. It was established that increasing the length of the spacer oxide enhances the effectiveness of the devices in high-frequency ranges. The assessed structures are employed with the Junctionless MOSFET architectures to demonstrate the feasibility of simpler fabrication and improved performance. The results show that the best width for the spacer oxide has a big impact on how well sub-100 nm GAA MOSFETs work at high frequencies, resist short-channel effects, and can be made smaller, making them a good choice for current and future high-frequency electronic devices. These findings provide valuable insights into the development and design of GAA MOSFETs for delivering improved high-speed and low-power devices.
Optimizing the structure, morphological and optical properties of Co-doped CDS, nanoparticles synthesized at various doping concentration and design sensors for optimal application , R. Rajeev, C. M. S. Negi, and Chalcogenide Letters, 2025 Cobalt-doped cadmium sulphide nanoparticles of semiconductors (CDs: Co NPs) were synthesised using various cobalt concentrations utilising a microwave-assisted approach. Debye-Scherer equation revealed the nanoparticles' size range to be between 2 and 4 nm. Diffraction from X-rays revealed a zinc mix structure. According to the structure in the optical bandgap energies indicates that, doping has systematically raised the bandgap energy as the doping concentration raises. The composition of the nanoparticles which was verified by EDAX, validated the effective integration of cobalt into the CdS structure. The detection of different functional and vibrational groups was performed at room temperature over a 400-4000 cm1 range using Fourier Transform Infrared Spectroscopy (FTIR). Comprehensive structural data including shape of nanoparticles and lattice characteristics were provided by HRTEM. Cobalt-doped cadmium Sulphide (CdS: Co) is a feasible material for optoelectronic sensors, due to its improved light response capabilities and configurable bandgap.The present research intends to optimize the structural and optoelectronic characteristics of CdS: Co through controlled doping and fabrication processes to create customized bandgap and to design sensors for appropriate use in a variety of spectrum areas.
Ab initio studies of structural, electronic, optical, elastic and thermal properties of copper thallium dichalcogenides (CuTiX2: X=S, Se, Te) Chalcogenide Letters, 2019
Analysing thickness and doping dependent photovoltaic performance in double perovskite (cesium tin iodide) solar cells: A TCAD-based simulation study KK Jain, S Yadav, SK Gupta, CMS Negi Next Materials 12, 102037 , 2026 2026
Comparison of nanocarbon-based electron transport layer for optoelectronic application K Sharma, M Sharma, PA Alvi, CMS Negi, SK Dwivedi Journal of Materials Science: Materials in Electronics 37 (10), 753 , 2026 2026
Lead-free Formamidinium Bismuth Bromide Perovskites for Memristor applications: a lead-free approach to sustainable electronics A Singh, SK Gupta, CMS Negi Emergent Materials 9 (1), 5 , 2026 2026 Citations: 1
Organic photodiode based on PTB7-Th: PCBM as photoactive layer: M Sharma et al. M Sharma, P Diwakar, V Yadav, CMS Negi, PA Alvi Indian Journal of Physics 100 (2), 713-720 , 2026 2026 Citations: 1
Photoelectric properties of PANI: ICBA bulk heterojunction: effect of solvent additive M Sharma, CMS Negi, PA Alvi Synthetic Metals, 118097 , 2026 2026 Citations: 1
Exploring Cs2AgBiBr6 Halide Double Perovskite as a Lead-Free Emissive Material for Perovskite LEDs KKK Jain, S Yadav, SK Gupta, CMS Negi Physica Scripta 100, 115514 , 2025 2025 Citations: 1
Future Applications of Junctionless Transistors Using Gallium Phosphide Channel for the Semiconductor Industry P Srivastava, A Upadhyaya, S Yadav, CMS Negi Recent Trends in Applied Physics and Material Science, 327-330 , 2025 2025
Synergistic effects of N719 and N3 dyes in DSSCs with gel polymer electrolyte and graphite counter electrode SK Gupta, CMS Negi Next Materials 9, 101224 , 2025 2025 Citations: 2
Structure–Property Correlation in PVDF-HFP/Carbon Black Nanocomposites: Insights from XRD, FESEM, and Raman Studies S Paliwal, SK Gupta, CMS Negi Journal of Macromolecular Science, Part B, 1-17 , 2025 2025 Citations: 1
Gallium Nitride Channel-Based Junctionless Transistors for Futuristics Power Electronics Energy Applications P Srivastava, A Upadhyaya, S Yadav, CMS Negi, AK Singh Proceedings of the 1st International Conference on Materials and … , 2025 2025
Effect of Valence Band Mixing on Density of States and Absorption Coefficient of CdSe/ZnSe Quantum Dots PUSK Gupta, CMS Negi Proceedings of the 1st International Conference on Materials and … , 2025 2025
Optimizing the structure, morphological and optical properties of Co-doped CDS, nanoparticles synthesized at various doping concentration and design sensors for optimal … R Rajeev, CMS Negi Chalcogenide Letters 22 (5) , 2025 2025 Citations: 3
P3HT: Fullerene-Based Composite as Active Layer for Optoelectronic Applications: M. Sharma et al. M Sharma, CMS Negi, PA Alvi Journal of Electronic Materials 54 (5), 4026-4035 , 2025 2025 Citations: 7
HfO2/SiO2 spacer oxide width optimization for enhanced terahertz performance and short-channel integrity in sub-nm silicon based junctionless dual metal gate-all-around FET … CMSN Shekhar Yadav , Pooja Srivastava Nano Trends 10, 100114 , 2025 2025
Analysis of nanoscale short channel effects in cylindrical gate-all-around junctionless FETs and performance enhancement with GaAs and III–V materials for low-power, high … P Srivastava, A Upadhyaya, S Yadav, CMS Negi, AK Singh Electronics 14 (6), 1134 , 2025 2025 Citations: 5
Graphene derivatives as efficient hole transport materials for lead-free double perovskite (Cs 2 SnI 6 ) solar cells: a numerical study S Yadav, SK Gupta, CMS Negi Optoelectronics Letters 21 (3), 155-159 , 2025 2025 Citations: 7
Role of Annealing Conditions on the Resistive Switching Behavior of Solution Processed Formamidinium Lead Bromide FaPbBr3 Devices A Singh, S Paliwal, A Upadhyaya, SK Gupta, CMS Negi Nano Trends 9, 100100 , 2025 2025 Citations: 2
Investigation of Short Channel Effects in Al 0.30 Ga 0.60 As Channel-Based Junctionless Cylindrical Gate-All-Around FET for Low Power Applications P Srivastava, A Upadhyaya, S Yadav, CMS Negi, AK Singh Journal of Low Power Electronics and Applications 15 (1), 12 , 2025 2025 Citations: 3
Device Simulation and Parameter Analysis of Lead-Free Perovskite Cesium Antimony Bromide-Based Photodetectors L Singh, CMS Negi, SK Gupta International Conference on Signal Processing and Integrated Networks, 3-13 , 2025 2025
< span style=" color: black; mso-themecolor: text1;"> Analysis of Nanoscale Short Channel Effects in Cylindrical Gate-All-Around Junctionless FETs and Performance Enhancement … P Srivastava, A Upadhyaya, S Yadav, CMS Negi, AK Singh 2025
MOST CITED SCHOLAR PUBLICATIONS
Influence of active layer thickness on photovoltaic performance of PTB7: PC70BM bulk heterojunction solar cell N Sharma, SK Gupta, CMS Negi Superlattices and Microstructures 135, 106278 , 2019 2019 Citations: 60
Enhanced performance of perovskite photodetectors fabricated by two-step spin coating approach S Chaudhary, SK Gupta, CMS Negi Materials Science in Semiconductor Processing 109, 104916 , 2020 2020 Citations: 50
Enhanced performance of dye-sensitized solar cells by co-sensitization of metal-complex and organic dye D Kharkwal, N Sharma, SK Gupta, CMS Negi Solar Energy 230, 1133-1140 , 2021 2021 Citations: 48
Poly-(3-hexylthiophene)/graphene composite based organic photodetectors: The influence of graphene insertion A Yadav, A Upadhyaya, SK Gupta, AS Verma, CMS Negi Thin Solid Films 675, 128-135 , 2019 2019 Citations: 48
Synthesis and characterization of methylammonium lead iodide perovskite and its application in planar hetero-junction devices A Upadhyaya, CMS Negi, A Yadav, SK Gupta, AS Verma Semiconductor Science and Technology 33 (6), 065012 , 2018 2018 Citations: 43
Investigation of the optical and electrical characteristics of solution-processed poly (3 hexylthiophene)(P3HT): multiwall carbon nanotube (MWCNT) composite-based devices P Rathore, CMS Negi, AS Verma, A Singh, G Chauhan, AR Inigo, ... Materials Research Express 4 (8), 085905 , 2017 2017 Citations: 41
Textile dyes as photo-sensitizer in the dye sensitized solar cells V Yadav, S Chaudhary, CMS Negi, SK Gupta Optical Materials 109, 110306 , 2020 2020 Citations: 37
Fabrication of eco-friendly, low-cost dye sensitized solar cells using harda fruit-based natural dye V Yadav, CMS Negi, DK Kumar, SK Gupta Optical Materials 122, 111800 , 2021 2021 Citations: 36
Impact of electron transport layer material on the performance of CH3NH3PbBr3 perovskite-based photodetectors J Chaudhary, SK Gupta, AS Verma, CMS Negi Journal of Materials Science 55 (10), 4345-4357 , 2020 2020 Citations: 36
IV and impedance characterization of a solution processed perovskite based heterojunction photodetector A Upadhyaya, CMS Negi, A Yadav, SK Gupta, AS Verma Superlattices and Microstructures 122, 410-418 , 2018 2018 Citations: 34
Performance of dopamine modified 0.5 (Ba0. 7Ca0. 3) TiO3-0.5 Ba (Zr0. 2Ti0. 8) O3 filler in PVDF nanocomposite as flexible energy storage and harvester C Mitharwal, S Malhotra, A Bagla, MK Srivastava, SM Gupta, CMS Negi, ... Journal of Alloys and Compounds 876, 160141 , 2021 2021 Citations: 33
A comparative analysis of the optoelectronic performance of conventional and inverted design organic photodetectors N Sharma, CMS Negi, M Sharma, A SinghVerma, SK Gupta Optical materials 95, 109273 , 2019 2019 Citations: 33
P3HT-rGO composites for high-performance optoelectronic devices M Sharma, N Sharma, PA Alvi, SK Gupta, CMS Negi Optical Materials 127, 112326 , 2022 2022 Citations: 31
Surface morphological, optical and electrical characterization of methylammonium lead bromide perovskite (CH 3 NH 3 PbBr 3 ) thin film J Chaudhary, S Choudhary, CMS Negi, SK Gupta, AS Verma Physica Scripta 94 (10), 105821 , 2019 2019 Citations: 26
Theoretical Analysis of Resonant Cavity p-Type Quantum Dot Infrared Photodetector CMS Negi, D Kumar, SK Gupta, J Kumar IEEE Journal of Quantum Electronics 49 (10), 839-849 , 2013 2013 Citations: 26
Influence of MWCNT doping on performance of polymer bulk heterojunction based devices P Rathore, CMS Negi, A Yadav, AS Verma, SK Gupta Optik 160, 131-137 , 2018 2018 Citations: 24
The optoelectronic behavior of reduce graphene oxide-carbon nanotube nanocomposites M Sharma, PA Alvi, SK Gupta, CMS Negi Synthetic metals 281, 116892 , 2021 2021 Citations: 23
C60 Concentration Influence on MEH-PPV: C60 Bulk Heterojunction-Based Schottky Devices: Sharma, Negi, Verma, and Gupta N Sharma, CMS Negi, AS Verma, SK Gupta Journal of Electronic Materials 47 (12), 7023-7033 , 2018 2018 Citations: 23
Nonlinear optical absorption and refraction in a strained anisotropic multi-level quantum dot system CMS Negi, SK Gupta, D Kumar, J Kumar Superlattices and Microstructures 60, 462-474 , 2013 2013 Citations: 23
Silver-decorated multiwall carbon nanotubes: synthesis characterization and application in polymer composite-based devices A Yadav, A Upadhyaya, J Gope, SK Gupta, CMS Negi Journal of Materials Science: Materials in Electronics 31 (2), 1451-1460 , 2020 2020 Citations: 22
