Prof. Soumik Kumar Kundu
@iem.edu.in
Assistant Professor, Electronics and Communication Engineering
Institute of Engineering and Management, Kolkata
RESEARCH INTERESTS
Nano-science and Nano-technology
Scopus Publications
Scopus Publications
Soumik Kumar Kundu, Samit Karmakar, and Gouranga Sundar Taki
Wiley
Samit Karmakar, Soumik Kumar Kundu, Sujit Kumar Bandyopadhyay, and Gouranga Sundar Taki
Wiley
Prasanga Taki, Pratham Padala, Ritam Panja, Samit Karmakar, Soumik Kumar Kundu, Mili Sarkar, and G S Taki
IEEE
Electrical characteristics of Field Effect Transistors depend upon its mechanical structure of the device. It depends upon the dimension of the electrodes along with the electrical voltages applied to the electrodes. The electrical field generated in the device also depends upon the properties of the dielectric material used. High Electron Mobility Transistor (HEMT) is a special type of device. In this study, the properties of HEMT will be discussed. In HEMT, the mobility of electrons is enhanced with the help of heterojunction structure by trapping electron in the form of 2D Electron Gas with very high conductivity. The electrical properties of HEMT have been studied here by altering their physical dimensions, changing the doping concentration by replacing a suitable material to form proper heterojunction interface.
Soumik Kumar Kundu and G. S. Taki
IEEE
This research explores the synthesis and characterization of carbon nitride (CNx) thin films on copper coated tempered glass substrate through the in-house developed DC magnetron sputtering system at low operating power density of 3.4 W/cm2. Carbon nitride, a promising material with diverse applications ranging from optoelectronics to catalysis, has gathered significant attention due to its tunable properties and unique electronic structure. Magnetron sputtering, known for its precision and versatility, offers a controlled deposition method for fabricating CNx thin films. The study systematically investigates the influence of sputtering time at a fixed discharge current on the crystallographic and optical characteristics of the deposited films. Through a comprehensive analysis using techniques like X-ray diffraction, and UV-Vis spectroscopy, we elucidate the impact deposition time on the crystallographic structure, and optical bandgap of the resulting carbon nitride thin films.
Samit Karmakar, Pralay Kumar Ghosh, Debjani Kundu, Sampad Chakraborty, Shantanu Ghosh, and Soumik Kumar Kundu
IEEE
This study explores a machine learning approach for the detection of blood glucose levels, a crucial aspect in managing and preventing metabolic disorders such as diabetes. Leveraging diverse health parameters, including physiological indicators and lifestyle factors, a comprehensive dataset is utilized to train and evaluate supervised machine learning models. Decision trees, support vector machines, and neural networks are employed, with a focus on optimizing predictive accuracy. The research encompasses rigorous data preprocessing, feature engineering, and model evaluation to ensure robust performance. Results demonstrate the efficacy of machine learning in early detection, providing a foundation for proactive healthcare interventions. This approach holds significant potential for transforming how blood glucose levels are monitored, contributing to personalized medicine and advancing preventive.
Uddipan Agasti, Soumik Kumar Kundu, Samit Karmakar, Mili Sarkar, and Satyaranjan Bhattacharyya
IEEE
Aluminium nanoclusters of 5.4 nm diameter was fabricated and then deposited on silicon wafer. The process of magnetron sputtering was employed in fabricating the clusters. The surface morphology along with the elemental composition of the films of Al-nanoclusters were studied using Scanning Electron Microscope (SEM) and X-ray Photoelectron Spectroscopy (XPS) analysis respectively. During the analysis, an average diameter of 6.5 nm was observed using the statistical distribution of nanoclusters on the substrates along with prominent peaks of Al 2s, Si 2p, and O 1s under full survey spectra of XPS.
Soumik Kumar Kundu, Shreyan Sarkar, Arnab Mondal, Anushka Bandyopadhyay, Soumily Ray, Nayan Kamal, Animesh Ghosh, and Samit Karmakar
IEEE
This comprehensive review explores the significant developments in Schottky diode technology, focusing on advancements, emerging trends, and key contributions in recent years. Schottky diodes, known for their fast switching speeds and low forward voltage drop, play a crucial role in various electronic applications, including rectifiers, mixers, and detectors. The review encompasses novel materials used and fabrication techniques. The discussion delves into the evolution of Schottky diodes, highlighting improvements in performance parameters such as efficiency, reliability, and thermal stability. The exploration of recent research endeavors covers topics such as nanoscale Schottky diodes, heterojunctions, and advancements in contact technologies, shedding light on their implications for enhanced device characteristics. Furthermore, the review addresses challenges faced in Schottky diode development and discusses potential solutions and future directions. The synthesis of research findings provides valuable insights for researchers, engineers, and practitioners interested in the continual evolution of Schottky diodes and their applications in modern electronic systems. This review serves as a comprehensive resource for understanding the state-of-the-art developments in Schottky diode technology and offers a roadmap for future research and innovation in this dynamic field.
Deborshi Banerjee, Soumyadeep Ghosh, Tuhin Manna, Soumik Kumar Kundu, Samit Karmakar, and G. S. Taki
IEEE
Magnetron sputtering is a widely used physical deposition technique for developing both metallic and nonmetallic thin films. Researchers discovered interest in this method because of its uniform deposition, high deposition rate and low cost. This study uses the Electrostatic and Magneto-static solver program in CST Studio software to simulate the field distribution and energy distribution of a DC magnetron sputter-head that was designed and manufactured domestically. Analysis has been carried out on the field variation plot and energy density variation plot against the diameter for 3 different negative voltages: -300 V, -500 V and -800 V that were acquired from the simulation study.
Indranil Basu, Samit Karmakar, Soumik Kumar Kundu, Avishek Saha, and G. S. Taki
IEEE
Learning based on interaction with the environment is a natural phenomenon, for example, a baby learns through direct sensory interaction with the environment, without the supervision of any other person. This sensory connection with the environment is the source of all of his/her information about the causes and effects of the consequences of his/her behavior, and what must be done to realize some immediate objective. This kind of interaction with the environment is the main source of knowledge, for all humans, about our environment and also about ourselves. While we are learning to drive or having a conversation, we are very conscious of how our environment responds to our actions and we try to influence what happens by responding through our actions. Learning from interaction is the fundamental idea of almost all learning and intelligence theory. In this article, we explore a computational method using an agent that learns from interaction. It does not directly depend on the learning techniques of humans or animals, but mainly analyzes idealizes from them and then evaluates the effectiveness. We try to implement this approach by applying the techniques of what is called Deep Reinforcement Learning. Compared with other machine learning methods, it focuses more on targeted learning from interactions with the environment.
Samit Karmakar, Soumik Kumar Kundu, Aditya Mukherjee, Sujit Kumar Bandyopadhyay, Satyaranjan Bhattacharyya, and Gouranga Sundar Taki
Trans Tech Publications, Ltd.
Microstructural analysis of commercially available cold-rolled polycrystalline copper foil, etched and annealed in an in-house developed Electron Cyclotron Resonance (ECR) Plasma Enhanced Chemical Vapour Deposition (PE-CVD) reactor, have been carried out using x-ray diffraction (XRD) studies. The annealing experiments were carried out under a vacuum environment, keeping the working pressure of the reactor at 50×10-3 mbar, for three different time spans of 30 mins, 45 mins and 1 hour at 823 K (550 °C) and 923 K (650 °C) respectively in presence of hydrogen plasma. The XRD studies reveal the significance of annealing time at two different temperatures for the determination of physical and microstructural parameters such as the average grain size and micro-strain in copper lattice by Williamson-Hall (W-H) method.
Soumik Kumar Kundu, Samit Karmakar, Sujit Kumar Bandyopadhyay, Satyaranjan Bhattacharyya, and Gouranga Sundar Taki
Trans Tech Publications, Ltd.
Copper nanofilms are extensively used in the field of material science research. Nanoparticles and nanostructures of copper have various utilities in the field of photocatalytic and sensor applications. The transition metal nanoparticles and nanostructures supply plenty free electrons which drastically enhances the optical and electrical properties compared to bulk material. Here, copper thin films have been deposited on glass slides and silicon substrates using an indigenously developed DC magnetron sputtering system. These depositions have been carried out at three different time spans keeping the magnetron discharge current, working vacuum and target to substrate distance unaltered. The objective of this work is to study the crystalline structure and measure the thickness of the copper nanofilm deposited at three different times. The synthesized films were characterized by using X-Ray Fluorescence (XRF), X-Ray Diffractometer (XRD) and Secondary Ion Mass Spectrometer (SIMS). Characteristic peaks of copper (111) along with Cu2O (110), (220) and (111) were obtained from the XRD pattern. The average grain size of the deposited films has been calculated using Debye-Scherrer equation. The film thickness ranging from 80-160 nm for various time spans were measured from depth profile analysis using SIMS data.
Soumik Kumar Kundu, Samit Karmakar, and G. S. Taki
IEEE
In this study, various copper thin films are deposited using in-house DC magnetron sputtering system at different deposition conditions. The elemental composition of the deposited thin films is investigated by using X-ray Photoelectron Spectroscopy (XPS). The total survey scan and the high-resolution scan at Cu 2p positions are studied thoroughly to optimize the deposition parameter for obtaining better copper content. It is observed that prominent peaks of Cu 2p3/2 and Cu 2p1/2 are obtained from the high-resolution scan of Cu 2p in this developed thin film and these peaks are separated around ~ 19 e V which implies the formation of various oxides.
Soumik Kumar Kundu, Samit Karmakar, Mili Sarkar, and G. S. Taki
IEEE
Magnetron sputtering is a very useful technique for various metallic and non-metallic thin film development. Due to its uniform deposition and high deposition rate, researchers found an interest in this deposition technique. The magnetic field distribution is the main key factor in magnetron sputtering deposition. In this work, a simulation study of magnetic field distribution of an indigenously designed and developed DC magnetron sputter-head has been carried out using Magneto-static solver program in CST Studio software. The obtained field variation plot along the diameter from simulation study has been compared with the physical magnetic field mapping experiment.
Samit Karmakar, Soumik Kumar Kundu, Mili Sarkar, and G. S. Taki
IEEE
Samit Karmakar, Soumik Kumar Kundu, and G. S. Taki
IEEE
Graphene is considered as one of the most significant 2-D materials. However, the zero-bandgap property of pristine graphene restricts its use as semi-conductor material. Hence, introducing defect in the graphene structure can produce an appreciable band-gap that can be utilized in semiconducting industry. In this work, band-structure and density of states (DOS) of graphene and its various defect induced structures are studied by employing density functional theory (DFT) method using the BURAI GUI of Quantum ESPRESSO.
Samit Karmakar, Soumik Kumar Kundu, Sujit Kumar Bandyopadhyay, Malay Gangopadhyay, and G. S. Taki
IEEE
Prevalence of diabetes mellitus is a growing area of concern worldwide. An accurate and timely detection can lead to a normal life of a patient. The existing enzyme-based method for blood glucose detection suffers from poor sensitivity and interference with other blood constituents. Hence, the nano-material synthesis for sensitive and stable non-enzyme based sensors for blood glucose measurement is a worldwide frontline emerging area of research. In this study, the significance of transition metal nano-particle decorated graphene film as a non-enzymatic sensor is discussed. A scheme for synthesizing this sensor materials with detection mechanism is also proposed. The Biomedical and Bioprocess Engineering will be immensely benefitted by the outcome of such research on non-enzymatic glucose sensor material.
Soumik Kumar Kundu, Samit Karmakar, Sujit Kumar Bandyopadhyay, Malay Gangopadhyaya, and G. S. Taki
IEEE
The non-metallic conjugated polymer graphitic Carbon Nitride (g-C3 N4) has drawn attention to the material science researchers for its potential application in the field of renewable energy harnessing and environmental remediation. Its outstanding electronic and optical properties made this material a superior photocatalyst among the existing photocatalysts. The effects of electronic property on enhancement of optical property of photocatalysts is discussed in this article and a future experimental scheme has been proposed here.
Shankha Mukherjee, Shubham Majee, Suman Kundu, Soumik Kumar Kundu, Samit Karmakar, and G.S. Taki
IEEE
In the era of nanotechnology, VLSI industry employs various deposition methods and techniques to develop various sensors & devices, utilized in numerous applications. The commonly used deposition methods e.g., ALD, MBE, Vacuum Evaporation, CVD, PLD, Sputtering etc. are mostly dedicated for specific sets of deposition. Some of the methods are even extremely sophisticated, expensive or lack precision. Electron Cyclotron Resonance Plasma Enhanced (ECR-PE) multipurpose nano-film deposition system is one such unique apparatus that is in-house designed & developed to deposit high quality thin films of various metals and non-metals. Both, Plasma Enhanced Chemical Vapour Deposition (PE-CVD) arrangement and Sputter deposition arrangement is designed in the same plasma reactor considering permanent magnets. Although, the PE-CVD setup is already developed and made operational using a permanent magnet return yoke structure, the fabrication of the sputtering setup is yet to be carried out for its accommodation in the system. In this study, two annular permanent magnet assembly consisting of six (sextupole) and four (quadrupole) dipole magnets have been designed and simulated to study magnetic field distribution inside reactor for the sputter deposition arrangement.
Samit Karmakar, Soumik Kumar Kundu, Aditya Mukherjee, Arpan Dutta, Soumyadeep Bose, Saptarshi Mukherjee, and G. S. Taki
IEEE
Microwave heating of dielectric window material placed at the injection port of an E-Plane Bend is investigated in this study. 2.45 GHz microwave power is injected into a matched load through a microwave injection hardware consisting of one WR340 rectangular waveguide section and an E-plane waveguide bend. A 3-stub tuning arrangement is used to obtain a matched condition. Teflon is considered here as the dielectric window material, placed between WR340 waveguide section and E-plane bend. This study is essentially needed to know peak temperature of the dielectric material (Teflon) at various microwave power of 500W, 750W and 1kW. The objective of the work is to investigate the temperature rise in Teflon along with microwave injection hardware over predetermined time periods. The steady-state temperature analysis has also been carried out to stimulate the knowledge about the temperature variation in Teflon window, affecting loss tangent, at aforementioned power levels.
Soumik Kumar Kundu, Samit Karmakar, G. S. Taki, Aishwarya Roy, Chayanika Dhar Choudhuri, Megha Basu, Ankan Basak, Rishav Upadhyay, Abhinav Raj, and Satyaki Mandal
IEEE
Scaling of Metal Oxide Semiconductor (MOS) devices under submicron range experiences high device power dissipation due to large leakage current caused by Short Channel Effects (SCE). The use of high-K dielectric gate stack in MOS technology can solve these problems. The structure of the MOS device appears to be a vital issue below 22nm technology. The technologist devised FinFET, Tunnel FET (TFET), Carbon Nano Tube based TFET (T-CNFET), Nanowire-FET (NWFET) to remove the drawbacks of the existing technology. The various features of such devices have been discussed in this article.
Samit Karmakar, Shamik Mukherjee, Soumik Kumar Kundu, Deepantee Jha, and G.S. Taki
IEEE
An Electron Cyclotron Resonance (ECR) Plasma Enhanced Chemical Vapor Deposition (CVD) setup has been proposed here to create good quality uniform nano-dimensional coating on a large number of concave substrates. Our present objective is to study the wave plasma interaction in a unique ECR plasma enhanced deposition system using COMSOL Multi-Physics Software. The surface electron density and its temperature will be presented in this study by varying the intensity of confining magnetic field. Here two identical deposition chambers are fed by two identical shaped microwave coaxial antennas. In the proposed scheme, high density plasma is generated around the 875 Gauss resonance zone. It is essential for cracking the precursor gas molecules used for the deposition of the film. The study will help us to create nano-dimensional coating of dielectric materials needed for nano devices. This also will facilitate to create a uniform metallic and non-metallic nano films inside the surface of a semi-cylindrical/concave shaped device.
Soumik Kumar Kundu, Samit Karmakar, Shamik Mukherjee, Shubham Majee, Suman Kundu, and G. S. Taki
IEEE
Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) is one of the most popular deposition technique used today to develop precision lower nano-dimensional films. High temperature is not usually required for synthesis of thin films in PECVD technique. The designs of the magnetic field and microwave injection system have been studied using COMSOL multi-physics and the results are presented here. The propagation of 2.45 GHz microwave power through its injection hard-wares have been studied precisely. A 700W, 2.45 GHz magnetron source is feeding microwave to the 150mm diameter cylindrical plasma cum deposition chamber through a coaxial antenna. A mode conversion takes place from coaxial to rectangular injection line. A mirror magnetic field configuration has been achieved with the help of two annular portable rare earth toroidal ring magnets of remnant magnetism 1.15 T. The magnetization direction has been considered along the length of the magnet. Particle wave interaction takes place in the plasma chamber and the produced plasma propagates into the deposition chamber to react with the precursor resulting energetic radicals. Radicals thus produced deposits on the substrate to create desired nano-dimensional films.
Tuhin Kumar Das, Indrani Mukherjee, Vivek Prateek, Soumik Kumar Kundu, Samit Karmakar, G. S. Taki, and Sayak Dutta Gupta
IEEE
An Electron Cyclotron Resonance (ECR) source can deliver stable high intensity positively charged ion current. It is a magnetically confined plasma produced by injection of microwave power. Efficient coupling of microwave power into the plasma is achieved by using suitable window that provides better impedance matching between the launching device and the plasma load. The thickness and dielectric property of the window is of utmost importance for effective microwave injection. The main objective of the present study is to find out a suitable window for a particular operating frequency. High Frequency Structural Simulator (HFSS) code has been used to analyze the wave propagation in 1.69-12 GHz frequency range. This enables us to find the optimum thickness of the dielectric window that would give maximum power absorption in singly ionized Argon and Nitrogen plasma for a specific range of injected microwave frequencies.
Soumik Kumar Kundu, Samit Karmakar, Md. Samim Reza, Arindam Dutta, and G.S. Taki
IEEE
At submicron range below 45 nm technology for MOS transistors, leakage power dissipation is a critical concern other than dynamic and short circuit power dissipation. This happens due to the effect of low level dielectric property of Silicon dioxide (SiO2) gate insulator. It has been observed that the leakage power dissipation is reduced further to a large extent using high-κ dielectric. In this paper, we will study the nature of high-κ dielectric material in lower submicron NMOS Technology using “MINIMOS-NT Global TCAD” simulation software. The role of leakage current for a few high-k gate materials in singular and in stacks will be determined from the transfer characteristics of a MOS transistor. The study has been extended to Gate Stack dielectric materials for NMOS. Some interesting results have been presented here, using some high-k dielectric materials.