Dr. A. Mohanbabu

Scopus Publications

Analysis of step-doped super-junction AlGaN/GaN enhancement-mode HEMTs with graded barrier layers for high-efficiency boost converters
M. Priscilla, A. Mohanbabu
Journal of the Korean Physical Society, 2026
Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs)
S. Ravi, C. Priya, A. Mohanbabu, S. Maheswari, A. Lakshmi Narayana, P. Murugapandiyan
Journal of Materials Science, 2025
Enhancement of fMAX/fT in α-Ga2O3 MOSFET with ultra-wide bandgap MgO and CaO blocking layers
A. S. Augustine Fletcher, P. Murugapandiyan, A. Mohanbabu, S. Dhanasekar, G. Saranya
Applied Physics A Materials Science and Processing, 2025
Impact of Gate Angle Variations on DC and RF Performance of Enhancement-Mode Al0.15Ga0.85N/GaN/Al0.07Ga0.93N MIS-HEMT Device
L. Lino, R. Saravana Kumar, M. Leeban Moses, A. Mohanbabu
Journal of Electronic Materials, 2025
Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity
P. Murugapandiyan, A. Revathy, N. Ramkumar, R. Saravana Kumar, A. Mohanbabu
Journal of Electronic Materials, 2025
Energy-Efficient Dadda Multiplier Using Configurable Approximation Technique
Saranya L, Gunabharath K, Nandakumar J, Sri Nithi V, Srikanth KS, Mohanbabu A
2025 International Conference on Sustainability Innovation and Technology Icsit 2025, 2025
An accuracy-adjustable, energy-efficient Dadda multiplier based on configurable addition and approximate partitioning is proposed. The structure uses the approximate width setting and voltage over scaling as approximation knobs to increase the multiplier's lifetime and dependability while also reducing energy usage. The latter can only be called at design time, but the former can be set during both design and runtime. The partial output generation is applied with voltage scaling with approximation based on accuracy. Typically, the voltage over scaled columns at lower bit significances with larger switching activities is what keeps the error within a reasonable bound. For low-overhead realization, the structure uses a small number of level shifters. Contiguous are the approximate columns that begin with the first column. The final addition in the Dadda architecture uses a power gated radix adder, which dynamically turns on and disables logical element of an adder b using the power gating approach to compute precise or approximate results. As a result, power consumption and key path latency are eliminated. LSP columns 1-4 truncation of the multiplier output is also recommended in order to increase the multiplier's efficiency even more. Xilinx ISE is used to synthesize the efficiency of the suggested Dadda structure, which is built in Verilog HDL. The evaluations indicate that, the multiplier design proposed is efficient with respect to power consumption and performance when analyzed with existing counter parts.
Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate
L. Lino, R. Saravana Kumar, A. Mohanbabu, P. Murugapandiyan
Journal of Electronic Materials, 2024
Advancements in GaN technologies: Power, RF, digital and quantum applications
A. Mohanbabu, S. Maheswari, N. Vinodhkumar, P. Murugapandiyan, R. Saravana Kumar
Nanoelectronic Devices and Applications, 2024
Quantum well devices based on III-V heterostructures outperform Field Effect Transistors (FETs) by harnessing the exceptional properties of the twodimensional electron gas (2DEG) in various material interface systems. In high-power electronics, III-V-based Gallium Nitride (GaN) HEMTs can have a great influence on the transport industry, consumer, RADAR, sensing systems, RF/ power electronics, and military systems. On the other hand, the devices made of HEMTs and MIS-HEMTs work in enhancement mode, having very low leakage current, which can conserve energy for more efficient power conversion, microwave/ power transistors and highspeed performance for wireless communication. The existing physics of the wellestablished AlGaN heterostructure system imposes constraints on the further progress of GaN-based HEMTs. Some of the scopes include: Initially, the semiconductor materials made of SiC, GaN, and AlGaN allow a device that is resistant to severe conditions, such as high-power /voltage-high temperature, to operate due to its effective dielectric constant and has a very good thermal conductivity, which makes this device well-suited for military applications. Secondly, with the urgent need for high-speed internet multimedia communication across the world, high transmission network capacity is required. GaN-based HEMT devices are suitable candidates for achieving high-speed limits, high gain and low noise performance. In conclusion, GaN and related interface materials exhibit chemical stability and act as robust semiconductors, exhibiting remarkable piezoelectric polarization effects that lead to a high-quality 2DEG. Integrating free-standing resonators with functionalized GaNbased 2DEG formation reveals the potential for designing advanced sensors.<br>
Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications
Ramkumar Natarajan, P. Murugapandiyan, N. Vigneshwari, A. Mohanbabu, Karthikeyan S, S. Ravi
Micro and Nanostructures, 2024
Design and Performance Analysis of Proposed Dual Channel Redundant LoRaWAN for Industrial Control and Safety Shutdown Systems
Sobanbabu Nandhagopal, A. Mohan Babu
Communications in Computer and Information Science, 2024
Intelligent Power Device Modeling using Optimal Deep Learning Approach for AlGaN/GaN HEMTs
M. Priscilla, A. Mohan Babu, R. Radhika
10th International Conference on Electrical Energy Systems Icees 2024, 2024
Hybrid Deep Learning Approaches for Predictive Modeling of Aluminium Gallium Nitride with Rime Optimization Algorithm
M. Priscilla, A. Mohan Babu, R. Radhika
2024 International Conference on Smart Technologies for Sustainable Development Goals Icstsdg 2024, 2024
Smart Farming System Using IoT for Efficient Crop Growth
Jetti Venkata Ganesh, Saksham Bisht, Shashidhar Reddy, A. Mohan Babu
2024 3rd International Conference for Advancement in Technology Iconat 2024, 2024
Digital Apiaries: IOT Solutions for Modern Beekeepers
Abhigna Bharadwaj, Amogh M Babu, C.G. Raghavendra, G Giridhara Datta, Varun R Bhat, S Santosh Kumar
2024 International Conference on Knowledge Engineering and Communication Systems Ickecs 2024, 2024
E-mode-operated advanced III-V heterostructure quantum well devices for analog/RF and high-power switching applications
A. Mohanbabu, N. Vinodhkumar, S. Maheswari, S. Baskaran, V. Janakiraman, M. Saravanan, P. Murugapandiyan
Nano Devices for Integrated Circuit Design, 2023
High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study
C. Sivamani, P. Murugapandiyan, A. Mohanbabu, Augustine Fletcher
Microelectronics Journal, 2023
Multi-Modal Image Fusion Techniques to Detect Brain Tumor Using YOLO Technology
Nikhil Ravichandran, S M Sridevi, A. Mohanbabu
2023 4th IEEE Global Conference for Advancement in Technology Gcat 2023, 2023
Noise characterisation of GaN current aperture vertical electron transistor metal-insulated semiconductor field effect transistor with Δ-shaped gate for low noise radio frequency amplifiers
Varadhan Janakiraman, Anandan Mohanbabu, Shanmugam Maheswari, Androse Daniel Raj, Sanjoy Deb, Nallathambi VinodhKumar
International Journal of RF and Microwave Computer Aided Engineering, 2022
LG 55 nm T-gate InGaN/GaN channel based high electron mobility transistors for stable transconductance operation
Revathy Angamuthu, Boopathi ChettiaGoundar Sengodan, Mohanbabu Anandan, Arathy Varghese, Bharath Sreenivasulu Vakkalakula
International Journal of RF and Microwave Computer Aided Engineering, 2022
The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications
A. Danielraj, Sanjoy Deb, A. Mohanbabu, R. Saravana Kumar
Journal of Computational Electronics, 2022
Performance Analysis of FinFET based Ternary Inverter
N. Vinodh Kumar, A. Mohanbabu, Kunal Rasaily, Setti Veera Manikanta
2022 IEEE International Conference on Nanoelectronics Nanophotonics Nanomaterials Nanobioscience and Nanotechnology 5nano 2022, 2022
Design and development of AlGaN/GaN HEMT for biosensing applications for detection of cancers, tumors, and kidney malfunctioning
A. Mohanbabu, M. Saravanan, J. Ajayan, S. Baskaran
Electronic Devices Circuits and Systems for Biomedical Applications Challenges and Intelligent Approach, 2021
Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)
Baskaran Subramanian, Mohanbabu Anandan, Saminathan Veerappan, Murugapandiyan Panneerselvam, Mohammed Wasim, Saravana Kumar Radhakrishnan, Praveen Pechimuthu, Yogesh Kumar Verma, Subash Navaneethan Vivekanandhan, Elamurugan Raju
Journal of Electronic Materials, 2020
Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
P. Murugapandiyan, A. Mohanbabu, V. Rajya Lakshmi, V.N. Ramakrishnan, Arathy Varghese, MOHD Wasim, S. Baskaran, R. Saravana Kumar, V. Janakiraman
Journal of Science Advanced Materials and Devices, 2020
Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications
P. Murugapandiyan, A. Mohanbabu, V. Rajya Lakshmi, Mohammed Wasim, K. Meenakshi Sundaram
Journal of Electronic Materials, 2020
Optimization of enhancement mode P-type Mg-doped In0.2Ga0.8N cap gate DH-HEMT for low-loss high power efficient boost converter circuits
Yusuf U. Tarauni, D. John Thiruvadigal, Bijo Joseph, A. Mohanbabu
Materials Science in Semiconductor Processing, 2019
Retinal microaneurysms detection using local convergence index features
International Journal of Innovative Technology and Exploring Engineering, 2019
Gsm based door lock system
International Journal of Innovative Technology and Exploring Engineering, 2019
Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small-signal model of quaternary AlInGaN HEMTs for microwave frequency applications
Anbuselvan N., Mohankumar N., Mohanbabu A.
International Journal of Numerical Modelling Electronic Networks Devices and Fields, 2019
Device characteristics of enhancement mode double heterostructure DH-HEMT with boron-doped GaN gate cap layer for full-bridge inverter circuit
A. Mohanbabu, N. Mohankumar, D. Godwin Raj, Partha Sarkar, Samar K. Saha
International Journal of Numerical Modelling Electronic Networks Devices and Fields, 2018
Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications
R. Saravana Kumar, A. Mohanbabu, N. Mohankumar, D. Godwin Raj
International Journal of Electronics, 2018
Comparative assessment of InGaAs sub-channel and InAs composite channel double gate (DG)-HEMT for sub-millimeter wave applications
Saravana Kumar Radhakrishnan, Baskaran Subramaniyan, Mohanbabu Anandan, Mohankumar Nagarajan
AEU International Journal of Electronics and Communications, 2018
Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices
A. Mohanbabu, R. Saravana Kumar, N. Mohankumar
Superlattices and Microstructures, 2017
Analysis of noise performance in InAs DG-MOSHEMT
S. Tamilselvi, S. Tamilarasi, A. Mohanbabu, N. Mohankumar
Proceedings of 2nd International Conference on 2017 Devices for Integrated Circuit Devic 2017, 2017
Effect of gate length on the performance of InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices
R. Ranjani, R. Vaishnavi, N. Mohankumar, A. Mohanbabu
Proceedings of 2nd International Conference on 2017 Devices for Integrated Circuit Devic 2017, 2017
Investigation of performance of InAsSb based high electron mobility transistors (HEMTs)
M. Sheerin Begum, J. Vijayashree, A. Mohanbabu, N. Mohankumar
Proceedings of 2nd International Conference on 2017 Devices for Integrated Circuit Devic 2017, 2017
DC, RF and noise figure analysis of p+ In0.2Ga0.8N cap gate AlGaN DH-HEMT
N. Achsah Gladith, B. Sinduja, A. Mohanbabu, N. Mohankumar
Proceedings of 2nd International Conference on 2017 Devices for Integrated Circuit Devic 2017, 2017
In 0.7Ga 0.3As / InAs / In 0.7Ga 0.3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications
R. Saravana Kumar, A. Mohanbabu, N. Mohankumar, D. Godwin Raj
Journal of Computational Electronics, 2017
FInvestigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications
A. Mohanbabu, N. Mohankumar, D. Godwin Raj, Partha Sarkar
Physica E Low Dimensional Systems and Nanostructures, 2017
Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits
A. Mohanbabu, N. Mohankumar, D. Godwin Raj, Partha Sarkar, Samar K. Saha
Superlattices and Microstructures, 2017
Recessed Mg-doped P-Type In0.2Ga0.8N cap Gate AlGaN/GaN/AlGaN DH-HEMT for high breakdown and power electronics applications
A Mohanbabu, N Mohankumar
Proceedings of the International Conference on Inventive Computation Technologies Icict 2016, 2016
Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices
A. Mohanbabu, N. Anbuselvan, N. Mohankumar, D. Godwinraj, C.K. Sarkar
Solid State Electronics, 2014
Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices
S. Baskaran, A. Mohanbabu, N. Anbuselvan, N. Mohankumar, D. Godwinraj, C.K. Sarkar
Superlattices and Microstructures, 2013