Shivam Patel

I am working as an Assistant Professor of Engineering Physics at Charotar University of Science and Technology (Charusat), India. Before that, I had been working as an Ad-hoc Lecturer of Physics at Birla Vishvakarma Mahavidyalaya Engineering College, India for 6 years.

EDUCATION

I completed my Ph.D. in Physics, thesis entitled “Growth and characterization of pristine and doped SnSe single crystals” under the direction of Prof. Sunil H. Chaki & Prof. P. C. Viondkumar at the P.G. Department of Physics, Sardar Patel University on 29th October, 2020

RESEARCH INTERESTS

Experimental Condensed Matter Physics, Synthesis and Characterization of Single Crystals, Nanoparticles & Thin Film, Thermoelectric Performance, Photo-Response, Thermal stability, Performance of Hydrogen Cell`s Electrodes

Scopus Publications

Investigation of thermoelectric properties and photoresponse of Sb2S3−xSex crystals grown by Bridgman technique
Hiteshkumar R. Bhoi, M. P. Deshpande, Sandip V. Bhatt, Piyush Rajput, Shivam Patel, Yash V. Joshi, Zubin R. Parekh, Nidhishree M. Suchak, V. G. Sathe, S. H. Chaki
Journal of Materials Science Materials in Electronics, 2023
Effects of different Bismuth concentrations of InSbBi crystals grown by Bridgman technique
Hiteshkumar R. Bhoi, M.P. Deshpande, Piyush Rajput, Shivam Patel, Kiran N. Patel, S.H. Chaki, Swati J. Pandya, V.G. Sathe
Journal of Crystal Growth, 2022
Effect of Sb doping on CVT grown SnTe single crystals electrical and thermal properties
Rohitkumar M. Kannaujiya, Sunil H. Chaki, Ankurkumar J. Khimani, Anilkumar B. Hirpara, Zubin R. Parekh, Ranjan Kr. Giri, Shivam Patel, M. P. Deshpande
Journal of Materials Science Materials in Electronics, 2022
Growth and Characterizations of Rhenium Disulfide (ReS2) Single Crystals
Atriy Ghetiya, Sunil H. Chaki, Ankurkumar J. Khimani, Anilkumar B. Hirpara, Rohitkumar M. Kannaujiya, Shivam Patel, Milind P. Deshpande
Physica Status Solidi A Applications and Materials Science, 2021
Rhenium disulfide (ReS2) single crystals are grown by chemical vapor transport technique. Powder X‐ray diffraction analysis of the single crystals shows them to possess ReS2 phase with triclinic unit cell structure. Energy dispersive analysis of X‐rays shows the crystals to be slightly rich in sulfur and deficient in rhenium. The optical bandgap obtained of the as‐grown single crystals is 1.35 eV. The surface morphology study done by scanning electron microscopy shows that the crystal surface to be flat with layer edges, such observation states that the growth mechanism of crystal have happened by mechanism of sheet spreading. The transmission and diffraction mode electron microscopy shows the single crystals to be layered and crystalline, respectively. The Raman peaks are well assigned to the ReS2. Thermogravimetric and differential thermogravimetric analysis shows the single crystals to disintegrate by two steps. The differential thermal analysis shows that the ReS2 possesses initial endothermic followed by exothermic nature for fast heating rates. In case of a slow heating rate of 10 K min−1, other than endothermic followed by exothermic, the end temperature range shows endothermic nature. The kinetic parameters determined by Kissinger relation shows the single‐crystal samples to disintegrate at a higher temperature range.
Thermal analysis of direct vapour transport technique grown tin selenide single crystals
Shivam Patel, S.H. Chaki, P.C. Vinodkumar
Thermochimica Acta, 2020
Thermal decomposition study of SnSe single crystals
Shivam Patel, S. H. Chaki, P. C. Vinodkumar
European Physical Journal Plus, 2020
Pure SnSe, In and Sb doped SnSe single crystals – Growth, structural, surface morphology and optical bandgap study
Shivam Patel, S.H. Chaki, P.C. Vinodkumar
Journal of Crystal Growth, 2019
Effect of sulphur doping in SnSe single crystals on thermoelectric power
Shivam Patel, S H Chaki, P C Vinodkumar
Materials Research Express, 2019
Single crystals of sulfur doped SnSe with the proportion of SnSe0.65S0.35 are grown by direct vapour transport technique. The energy dispersive analysis of x-ray and x-ray diffraction analysis showed the crystals to be stoichiometric and possess orthorhombic unit cell structure, respectively. The surface morphology study of single crystals by scanning electron microscopy showed the growth to have occurred by layer growth mechanism. The optical analysis showed the crystals possess direct and indirect optical bandgaps. The bandgap values are larger than the bandgap values of pure SnSe single crystal. The study of electrical transport properties showed inadequate thermoelectric performance in case of sulphur doped SnSe compared to pure SnSe. The obtained results are discussed in detail.
Effect of indium and antimony doping on the transport properties of direct vapour transport (DVT) grown SnSe single crystals
Shivam Patel, S. H. Chaki, P. C. Vinodkumar
Journal of Applied Physics, 2018
Pure SnSe, 5% In, 10% In, 5% Sb, and 10% Sb doped SnSe single crystals were grown by the direct vapour transport technique. The energy dispersive X-ray analysis study of the samples showed them to be near stoichiometric but slightly Sn deficient. The X-ray diffraction study of all the as-grown single crystal samples showed that they possess an orthorhombic structure and the lattice parameters are in good agreement with the reported parameters. The thermoelectric power (S), dc electrical conductivity (σ), and thermal conductivity (κ) variation with temperature from ambient to 573 K substantiated the semiconducting nature of all the five samples. The sign of “S” was positive for all five samples for all the temperature range stating the sample to be a p-type semiconductor. The power factor (S2σ) and figure of merit (ZT) variation with temperature showed that pure SnSe possesses the highest value compared to doped samples. The obtained results are studied and discussed in detail.Pure SnSe, 5% In, 10% In, 5% Sb, and 10% Sb doped SnSe single crystals were grown by the direct vapour transport technique. The energy dispersive X-ray analysis study of the samples showed them to be near stoichiometric but slightly Sn deficient. The X-ray diffraction study of all the as-grown single crystal samples showed that they possess an orthorhombic structure and the lattice parameters are in good agreement with the reported parameters. The thermoelectric power (S), dc electrical conductivity (σ), and thermal conductivity (κ) variation with temperature from ambient to 573 K substantiated the semiconducting nature of all the five samples. The sign of “S” was positive for all five samples for all the temperature range stating the sample to be a p-type semiconductor. The power factor (S2σ) and figure of merit (ZT) variation with temperature showed that pure SnSe possesses the highest value compared to doped samples. The obtained results are studied and discussed in detail.