Namrata Bansal

@lingayasvidyapeeth.edu.in

Assistant Professor, Department of Electronics & Communication Engineering
Lingaya's Vidyapeeth

Namrata Bansal


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https://researchid.co/bnamz05

RESEARCH, TEACHING, or OTHER INTERESTS

Electrical and Electronic Engineering, Surfaces, Coatings and Films, Multidisciplinary
29

Scopus Publications

3635

Scholar Citations

22

Scholar h-index

24

Scholar i10-index

Scopus Publications

  • EtherChain: Leveraging Ethereum Blockchain for Scalable and Secure IoV Systems
    Himanshu Kumar Singh, Namrata Bansal
    13th International Conference on Intelligent Embedded Microelectronics Communication and Optical Networks Iemecon 2025, 2025
    The Internet of Vehicles (IoV) is rapidly evolving to provide high throughput, low bandwidth, and enhanced security for high-quality information transfer with minimal latency. However, before effectively adopting all these services, IoV faces various hurdles, including secure information sharing, tampering with information, and network overhead. IoV with blockchain provides substantial advantages for secure information sharing, tamper-proof storage of information, and efficient network administration. We propose EtherChain, a blockchain-based secure approach for IoV to provide information integrity, tamperproof distributed storage, and efficient network administration. EtherChain uses transaction validation, trust, and miner selection algorithms to verify transactions, manage trust between nodes, and select the miner to append the block to the blockchain. Following that, EtherChain compares security strength in terms of several forms of security attacks with other cutting-edge techniques, as well as performance outcomes in terms of throughput, cryptography operation time, and communication overhead. The research demonstrates that EtherChain outperforms state-of-the-art solutions in terms of performance and security.
  • Privacy-Preserving Coalesced Learning: Techniques, Challenges, and Future Directions
    Javalkar Dinesh Kumar, Namrata Bansal, Amanjyoti Sethi
    Proceedings IEEE 2024 1st International Conference on Advances in Computing Communication and Networking Icac2n 2024, 2024
    Privacy-Preserving Coalesced Learning (PPCL) exist a distributed method to machine learning that allows various plans or administrations to collaboratively order models deficiency allocation raw source, shielding separable privacy. Unlike old-style centralized methodologies, PPCL uses methods like protected collections, other concealment, and homomorphic encryption en route for stopping subtle source leakage. Secure aggregation syndicates separate idea updates securely, discrepancy privacy vaccinates noise to avoid model re-identification, and homomorphic encryption allows encrypted calculations. Despite its assurance, PPCL faces several tests. Communication above from recurrent informs can be heavy, scalability problems arise as contributor number grows, and combative outbreaks may deed system susceptibilities. Additionally, device and data heterogeneity present hurdles to attaining steady truthfulness and impartiality. Future research in PPCL aims to address these tests by improving scalability, enhancing communication, and improving security. These progressions could enlarge PPCL's application to privacy-sensitive areas like healthcare and finance, supporting secure, decentralized data-driven inventions.
  • Human-Robot Interaction: Designing Effective Interfaces for Collaborative Tasks
    Javalkar Dinesh Kumar, Namrata Bansal, Anjali Kaushik, Amanjyoti Sethi
    Proceedings IEEE 2024 1st International Conference on Advances in Computing Communication and Networking Icac2n 2024, 2024
    Human-Robot Interaction (HRI) is a crucial field in the development of collaborative robotic systems, particularly in environments like manufacturing, healthcare, and service industries. This paper explores the design of effective interfaces for facilitating seamless collaboration between humans and robots. We focus on the integration of intuitive communication methods, including speech, gesture recognition, and visual cues, to enhance user experience and task efficiency. By evaluating existing HRI frameworks and proposing novel interface models, we aim to improve human-robot synergy, enabling robots to better understand and respond to human intentions in complex, dynamic environments.
  • Surface and interface states of Bi2Se3 thin films investigated by optical second-harmonic generation and terahertz emission
    S. Y. Hamh, S.-H. Park, S.-K. Jerng, J. H. Jeon, S. H. Chun, J. H. Jeon, S. J. Kahng, K. Yu, E. J. Choi, S. Kim, S.-H. Choi, N. Bansal, S. Oh, Joonbum Park, Byung-Woo Kho, Jun Sung Kim, J. S. Lee
    Applied Physics Letters, 2016
    We investigate the surface and interface states of Bi2Se3 thin films by using the second-harmonic generation technique. Distinct from the surface of bulk crystals, the film surface and interface show the isotropic azimuth dependence of second-harmonic intensity, which is attributed to the formation of randomly oriented domains on the in-plane. Based on the nonlinear susceptibility deduced from the model fitting, we determine that the surface band bending induced in a space charge region occurs more strongly at the film interface facing the Al2O3 substrate or capping layer compared with the interface facing the air. We demonstrate that distinct behavior of the terahertz electric field emitted from the samples can provide further information about the surface electronic state of Bi2Se3.
  • Resonance effects in thickness-dependent ultrafast carrier and phonon dynamics of topological insulator Bi2Se3
    Sung Kim, Dong Hee Shin, Ju Hwan Kim, Chan Wook Jang, Jun Woo Park, Hosun Lee, Suk-Ho Choi, Seung Hyun Kim, Ki-Ju Yee, Namrata Bansal, Seongshik Oh
    Nanotechnology, 2015
    Resonance effects in the thickness-dependent ultrafast carrier and phonon dynamics of topological insulator Bi2Se3 are found irrespective of the kind of substrate by measuring thickness-dependent abrupt changes of pump-probe differential-reflectivity signals (ΔR/R) from Bi2Se3 thin films on four different substrates of poly- and single-crystalline (sc-) ZnO, sc-GaN and SiO2. The absolute peak intensity of the ΔR/R is maximized at ∼tC (6 ∼ 9 quintuple layers), which is not directly related to but is very close to the critical thickness below which the energy gap opens. The intensities of the two phonon modes deduced from the oscillatory behaviors superimposed on the ΔR/R profiles are also peaked at ∼tC for the four kinds of substrates, consistent with the thickness-dependent Raman-scattering behaviors. These resonant effects and others are discussed based on possible physical mechanisms including the effects of three-dimensional carrier depletion and intersurface coupling.
  • Anisotropic Terahertz Emission from Bi2Se3 Thin Films with Inclined Crystal Planes
    Sun Young Hamh, Soon-Hee Park, Jeongwoo Han, Jeong Heum Jeon, Se-Jong Kahng, Sung Kim, Suk-Ho Choi, Namrata Bansal, Seongshik Oh, Joonbum Park, Jun Sung Kim, Jae Myung Kim, Do Young Noh, Jong Seok Lee
    Nanoscale Research Letters, 2015
    We investigate the surface states of topological insulator (TI) Bi2Se3 thin films grown on Si nanocrystals and Al2O3 substrates by using terahertz (THz) emission spectroscopy. Compared to bulk crystalline Bi2Te2Se, film TIs exhibit distinct behaviors in the phase and amplitude of emitted THz radiation. In particular, Bi2Se3 grown on Al2O3 shows an anisotropic response with a strong modulation of the THz signal in its phase. From x-ray diffraction, we find that the crystal plane of the Bi2Se3 films is inclined with respect to the plane of the Al2O3 substrate by about 0.27°. This structural anisotropy affects the dynamics of photocarriers and hence leads to the observed anisotropic response in the THz emission. Such relevance demonstrates that THz emission spectroscopy can be a sensitive tool to investigate the fine details of the surface crystallography and electrostatics of thin film TIs.
  • Time-resolved terahertz dynamics in thin films of the topological insulator Bi2Se3
    R. Valdés Aguilar, J. Qi, M. Brahlek, N. Bansal, A. Azad, J. Bowlan, S. Oh, A. J. Taylor, R. P. Prasankumar, D. A. Yarotski
    Applied Physics Letters, 2015
    We use optical pump–THz probe spectroscopy at low temperatures to study the hot carrier response in thin Bi2Se3 films of several thicknesses, allowing us to separate the bulk from the surface transient response. We find that for thinner films the photoexcitation changes the transport scattering rate and reduces the THz conductivity, which relaxes within 10 picoseconds (ps). For thicker films, the conductivity increases upon photoexcitation and scales with increasing both the film thickness and the optical fluence, with a decay time of approximately 5 ps as well as a much higher scattering rate. These different dynamics are attributed to the surface and bulk electrons, respectively, and demonstrate that long-lived mobile surface photo-carriers can be accessed independently below certain film thicknesses for possible optoelectronic applications.
  • Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization
    Matthew Brahlek, Nikesh Koirala, Namrata Bansal, Seongshik Oh
    Solid State Communications, 2015
  • Time-resolved THz dynamics in thin films of Bi2Se3
    R. Valdes Aguilar, J. Qi, M. Brahlek, N. Bansal, A. Azad, S. Oh, A. J. Taylor, R. P. Prasankumar, D. A. Yarotski
    International Conference on Infrared Millimeter and Terahertz Waves Irmmw Thz, 2014
    Topological insulators represent a new state of matter where bulk insulators exhibit metallic surfaces that are protected by time reversal symmetry. However, in common transport measurements residual bulk conductivity hinders the properties of the topologically protected surfaces. Alternatively, terahertz spectroscopy has recently been shown to be capable of discerning the bulk and surface carrier conductivity. Here we use time-resolved optical pump-THz probe spectroscopy at low temperatures to study the hot carrier response of thin films of Bi2Se3 of several thicknesses and separate the bulk from the surface response. We find that for thinner films the photo excitation changes the transport scattering rate and reduces the surface conductivity. For thicker films, this process competes with the photoinduced increase in bulk conductivity, which occurs on shorter timescales and scales with the increase in both the film thickness and optical excitation fluence. These different dynamics of the surface and bulk electrons indicate a decoupling of surface and bulk carriers, and present the possibility of accessing long-lived surface photo-carriers for optoelectronic applications.
  • Emergence of decoupled surface transport channels in bulk insulating Bi2Se3 thin films
    Matthew Brahlek, Nikesh Koirala, Maryam Salehi, Namrata Bansal, Seongshik Oh
    Physical Review Letters, 2014
    In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating, should not provide any electric coupling between the two metallic surfaces. However, transport studies on existing TI films show that the topological states on opposite surfaces are electrically tied to each other at thicknesses far greater than the direct coupling limit where the surface wave functions overlap. Here, we show that as the conducting bulk channels are suppressed, the parasitic coupling effect diminishes, and the decoupled surface channels emerge as expected for ideal TIs. In Bi(2)Se(3) thin films with fully suppressed bulk states, the two surfaces, which are directly coupled below ∼10 QL, become gradually isolated with increasing thickness and are completely decoupled beyond ∼20 QL. On such a platform, it is now feasible to implement transport devices whose functionality relies on accessing the individual surface layers without any deleterious coupling effects.
  • Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect
    Namrata Bansal, Nikesh Koirala, Matthew Brahlek, Myung-Geun Han, Yimei Zhu, Yue Cao, Justin Waugh, Daniel S. Dessau, Seongshik Oh
    Applied Physics Letters, 2014
  • Transferring MBE-grown topological insulator films to arbitrary substrates and metal-insulator transition via dirac gap
    Namrata Bansal, Myung Rae Cho, Matthew Brahlek, Nikesh Koirala, Yoichi Horibe, Jing Chen, Weida Wu, Yun Daniel Park, Seongshik Oh
    Nano Letters, 2014
  • Plasmonic excitations in Bi2Se3 topological insulator
    P. Di Pietro, M. Ortolani, O. Limaj, A. Di Gaspare, V. Giliberti, F. Giorgianni, M. Brahlek, N. Bansal, N. Koirala, S. Oh, P. Calvani, S. Lupi
    International Conference on Infrared Millimeter and Terahertz Waves Irmmw Thz, 2013
  • Dirac cone shift of a passivated topological Bi2Se3 interface state
    Gregory S. Jenkins, Don C. Schmadel, Andrei B. Sushkov, H. Dennis Drew, Max Bichler, Gregor Koblmueller, Matthew Brahlek, Namrata Bansal, Seongshik Oh
    Physical Review B Condensed Matter and Materials Physics, 2013
  • Aging and reduced bulk conductance in thin films of the topological insulator Bi2Se3
    R. Valdés Aguilar, L. Wu, A. V. Stier, L. S. Bilbro, M. Brahlek, N. Bansal, S. Oh, N. P. Armitage
    Journal of Applied Physics, 2013
  • A sudden collapse in the transport lifetime acros. The topological phase transition in (Bi 1-x in x ) 2 Se 3
    Liang Wu, M. Brahlek, R. Valdés Aguilar, A. V. Stier, C. M. Morris, Y. Lubashevsky, L. S. Bilbro, N. Bansal, S. Oh, N. P. Armitage
    Nature Physics, 2013
  • Observation of Dirac plasmons in a topological insulator
    P. Di Pietro, M. Ortolani, O. Limaj, A. Di Gaspare, V. Giliberti, F. Giorgianni, M. Brahlek, N. Bansal, N. Koirala, S. Oh, P. Calvani, S. Lupi
    Nature Nanotechnology, 2013
  • Mapping the orbital wavefunction of the surface states in three-dimensional topological insulators
    Yue Cao, J. A. Waugh, X-W. Zhang, J-W. Luo, Q. Wang, T. J. Reber, S. K. Mo, Z. Xu, A. Yang, J. Schneeloch, G. D. Gu, M. Brahlek, N. Bansal, S. Oh, A. Zunger, D. S. Dessau
    Nature Physics, 2013
  • Giant plateau in the terahertz Faraday angle in gated Bi2Se 3
    Gregory S. Jenkins, Andrei B. Sushkov, Don C. Schmadel, M.-H. Kim, Matthew Brahlek, Namrata Bansal, Seongshik Oh, H. Dennis Drew
    Physical Review B Condensed Matter and Materials Physics, 2012
  • Topological-metal to band-insulator transition in (Bi 1-xIn x) 2Se 3 thin films
    Matthew Brahlek, Namrata Bansal, Nikesh Koirala, Su-Yang Xu, Madhab Neupane, Chang Liu, M. Zahid Hasan, Seongshik Oh
    Physical Review Letters, 2012
  • Thickness-independent transport channels in topological insulator Bi 2Se 3 thin films
    Namrata Bansal, Yong Seung Kim, Matthew Brahlek, Eliav Edrey, Seongshik Oh
    Physical Review Letters, 2012
  • Terahertz response and colossal kerr rotation from the surface states of the topological insulator Bi 2Se 3
    R. Valdés Aguilar, A. V. Stier, W. Liu, L. S. Bilbro, D. K. George, N. Bansal, L. Wu, J. Cerne, A. G. Markelz, S. Oh, N. P. Armitage
    Physical Review Letters, 2012
  • Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
    Namrata Bansal, Yong Seung Kim, Eliav Edrey, Matthew Brahlek, Yoichi Horibe, Keiko Iida, Makoto Tanimura, Guo-Hong Li, Tian Feng, Hang-Dong Lee, Torgny Gustafsson, Eva Andrei, Seongshik Oh
    Thin Solid Films, 2011
  • In situ study of emerging metallicity on ion-bombarded SrTiO3 surface
    Heiko Gross, Namrata Bansal, Yong-Seung Kim, Seongshik Oh
    Journal of Applied Physics, 2011
  • Thickness-dependent bulk properties and weak antilocalization effect in topological insulator Bi2Se3
    Yong Seung Kim, Matthew Brahlek, Namrata Bansal, Eliav Edrey, Gary A. Kapilevich, Keiko Iida, Makoto Tanimura, Yoichi Horibe, Sang-Wook Cheong, Seongshik Oh
    Physical Review B Condensed Matter and Materials Physics, 2011
  • Surface versus bulk state in topological insulator Bi2Se 3 under environmental disorder
    Matthew Brahlek, Yong Seung Kim, Namrata Bansal, Eliav Edrey, Seongshik Oh
    Applied Physics Letters, 2011
  • Simple self-gettering differential-pump for minimizing source oxidation in oxide-MBE environment
    Yong-Seung Kim, Namrata Bansal, Seongshik Oh
    Journal of Vacuum Science and Technology A Vacuum Surfaces and Films, 2011
  • Crucible aperture: An effective way to reduce source oxidation in oxide molecular beam epitaxy process
    Yong-Seung Kim, Namrata Bansal, Seongshik Oh
    Journal of Vacuum Science and Technology A Vacuum Surfaces and Films, 2010
  • Sr flux stability against oxidation in oxide-molecular-beam-epitaxy environment: Flux, geometry, and pressure dependence
    Y. S. Kim, Namrata Bansal, Carlos Chaparro, Heiko Gross, Seongshik Oh
    Journal of Vacuum Science and Technology A Vacuum Surfaces and Films, 2010

RECENT SCHOLAR PUBLICATIONS

  • Epitaxial growth of topological materials
    N Bansal
    Rutgers University-School of Graduate Studies , 2019
    2019
  • Surface and interface states of Bi2Se3 thin films investigated by optical second-harmonic generation and terahertz emission
    SY Hamh, SH Park, SK Jerng, JH Jeon, SH Chun, SJ Kahng, K Yu, ...
    Applied Physics Letters 108 (5) , 2016
    2016
    Citations: 18
  • Resonance effects in thickness-dependent ultrafast carrier and phonon dynamics of topological insulator Bi 2 Se 3
    S Kim, DH Shin, JH Kim, CW Jang, JW Park, H Lee, SH Choi, SH Kim, ...
    Nanotechnology 27 (4), 045705 , 2016
    2016
    Citations: 29
  • Anisotropic Terahertz Emission from Bi 2 Se 3 Thin Films with Inclined Crystal Planes
    SY Hamh, SH Park, J Han, JH Jeon, SJ Kahng, S Kim, SH Choi, N Bansal, ...
    Nanoscale research letters 10 (1), 489 , 2015
    2015
    Citations: 16
  • Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization
    M Brahlek, N Koirala, N Bansal, S Oh
    Solid State Communications 215, 54-62 , 2015
    2015
    Citations: 185
  • Experimental Analysis of Weak Anti-localization in Topological Insulator Thin Films
    J Moon, N Bansal, M Brahlek, N Koirala, S Oh
    Bulletin of the American Physical Society 60 , 2015
    2015
  • Experimental Analysis of Weak Anti-localization in Topological Insulator Thin Films
    N Bansal, M Brahlek, N Koirala, J Moon, S Oh
    APS March Meeting Abstracts 2015, L10. 015 , 2015
    2015
  • Time-resolved terahertz dynamics in thin films of the topological insulator Bi2Se3
    R Valdes Aguilar, J Qi, M Brahlek, N Bansal, A Azad, J Bowlan, S Oh, ...
    Applied Physics Letters 106 (1) , 2015
    2015
    Citations: 89
  • Time-resolved THz dynamics in thin films of Bi 2 Se 3
    RV Aguilar, J Qi, M Brahlek, N Bansal, A Azad, S Oh, AJ Taylor, ...
    2014 39th International Conference on Infrared, Millimeter, and Terahertz … , 2014
    2014
  • Emergence of Decoupled Surface Transport Channels in Bulk Insulating Thin Films
    M Brahlek, N Koirala, M Salehi, N Bansal, S Oh
    Physical review letters 113 (2), 026801 , 2014
    2014
    Citations: 151
  • Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect
    N Bansal, N Koirala, M Brahlek, MG Han, Y Zhu, Y Cao, J Waugh, ...
    Applied Physics Letters 104 (24) , 2014
    2014
    Citations: 43
  • Transferring MBE-grown topological insulator films to arbitrary substrates and metal–insulator transition via Dirac gap
    N Bansal, MR Cho, M Brahlek, N Koirala, Y Horibe, J Chen, W Wu, ...
    Nano letters 14 (3), 1343-1348 , 2014
    2014
    Citations: 45
  • Electrodynamics of the topological insulator (Bi In ) Se tuned to the brink of quantum criticality
    L Wu, R Valdes Aguilar, A Stier, C Morris, Y Lubashevsky, P Armitage, ...
    Bulletin of the American Physical Society 59 , 2014
    2014
  • Electrodynamics of the topological insulator (Bi1 -x In x ) 2 Se 3 tuned to the brink of quantum criticality
    L Wu, R Valdes Aguilar, A Stier, C Morris, Y Lubashevsky, P Armitage, ...
    APS March Meeting Abstracts 2014, G42. 003 , 2014
    2014
  • High quality topological insulator Bi 2 Se 3 thin film growth on amorphous SiO 2 using MBE
    N Koirala, N Bansal, M Brahlek, S Oh
    APS March Meeting Abstracts 2014, Q42. 001 , 2014
    2014
  • Transfer of large-area MBE grown BiSefilms to arbitrary substrates
    N Bansal, MR Cho, M Brahlek, N Koirala, Y Horibe, J Chen, W Wu, ...
    APS March Meeting Abstracts 2014, Q42. 004 , 2014
    2014
  • Bi 2 Se 3 Thin film topological insulators as a field effect transistor
    L Langer, N Bansal, N Koirala, M Brahlek, S Oh
    APS March Meeting Abstracts 2014, C1. 187 , 2014
    2014
  • Bulk-Insulating Bi 2 Se 3 Thin Films and Decoupled Topological Surface States
    M Brahlek, N Koirala, M Salehi, N Bansal, S Oh
    APS March Meeting Abstracts 2014, G42. 002 , 2014
    2014
  • Plasmonic excitations in Bi 2 Se 3 topological insulator
    P Di Pietro, M Ortolani, O Limaj, A Di Gaspare, V Giliberti, F Giorgianni, ...
    2013 38th International Conference on Infrared, Millimeter, and Terahertz … , 2013
    2013
  • Observation of Dirac plasmons in a topological insulator
    P Di Pietro, M Ortolani, O Limaj, A Di Gaspare, V Giliberti, F Giorgianni, ...
    Nature nanotechnology 8 (8), 556-560 , 2013
    2013
    Citations: 482

MOST CITED SCHOLAR PUBLICATIONS

  • Observation of Dirac plasmons in a topological insulator
    P Di Pietro, M Ortolani, O Limaj, A Di Gaspare, V Giliberti, F Giorgianni, ...
    Nature nanotechnology 8 (8), 556-560 , 2013
    2013
    Citations: 482
  • Thickness-Independent Transport Channels in Topological Insulator Thin Films
    N Bansal, YS Kim, M Brahlek, E Edrey, S Oh
    Physical review letters 109 (11), 116804 , 2012
    2012
    Citations: 457
  • Thickness-dependent bulk properties and weak antilocalization effect in topological insulator Bi Se
    YS Kim, M Brahlek, N Bansal, E Edrey, GA Kapilevich, K Iida, M Tanimura, ...
    Physical Review B—Condensed Matter and Materials Physics 84 (7), 073109 , 2011
    2011
    Citations: 420
  • Terahertz Response and Colossal Kerr Rotation from the Surface <?format ?>States of the Topological Insulator
    R Valdés Aguilar, AV Stier, W Liu, LS Bilbro, DK George, N Bansal, L Wu, ...
    Physical review letters 108 (8), 087403 , 2012
    2012
    Citations: 317
  • A sudden collapse in the transport lifetime across the topological phase transition in (Bi 1− x In x ) 2 Se 3
    L Wu, M Brahlek, R Valdés Aguilar, AV Stier, CM Morris, Y Lubashevsky, ...
    Nature Physics 9 (7), 410-414 , 2013
    2013
    Citations: 303
  • Topological-Metal to Band-Insulator Transition in Thin Films
    M Brahlek, N Bansal, N Koirala, SY Xu, M Neupane, C Liu, MZ Hasan, ...
    Physical review letters 109 (18), 186403 , 2012
    2012
    Citations: 279
  • Epitaxial growth of topological insulator Bi2Se3 film on Si (111) with atomically sharp interface
    N Bansal, YS Kim, E Edrey, M Brahlek, Y Horibe, K Iida, M Tanimura, ...
    Thin Solid Films 520 (1), 224-229 , 2011
    2011
    Citations: 254
  • Mapping the orbital wavefunction of the surface states in three-dimensional topological insulators
    Y Cao, JA Waugh, XW Zhang, JW Luo, Q Wang, TJ Reber, SK Mo, Z Xu, ...
    Nature Physics 9 (8), 499-504 , 2013
    2013
    Citations: 193
  • Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization
    M Brahlek, N Koirala, N Bansal, S Oh
    Solid State Communications 215, 54-62 , 2015
    2015
    Citations: 185
  • Emergence of Decoupled Surface Transport Channels in Bulk Insulating Thin Films
    M Brahlek, N Koirala, M Salehi, N Bansal, S Oh
    Physical review letters 113 (2), 026801 , 2014
    2014
    Citations: 151
  • Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder
    M Brahlek, YS Kim, N Bansal, E Edrey, S Oh
    Applied Physics Letters 99 (1) , 2011
    2011
    Citations: 107
  • Time-resolved terahertz dynamics in thin films of the topological insulator Bi2Se3
    R Valdes Aguilar, J Qi, M Brahlek, N Bansal, A Azad, J Bowlan, S Oh, ...
    Applied Physics Letters 106 (1) , 2015
    2015
    Citations: 89
  • Aging and reduced bulk conductance in thin films of the topological insulator Bi2Se3
    R Valdés Aguilar, L Wu, AV Stier, LS Bilbro, M Brahlek, N Bansal, S Oh, ...
    Journal of Applied Physics 113 (15) , 2013
    2013
    Citations: 47
  • Transferring MBE-grown topological insulator films to arbitrary substrates and metal–insulator transition via Dirac gap
    N Bansal, MR Cho, M Brahlek, N Koirala, Y Horibe, J Chen, W Wu, ...
    Nano letters 14 (3), 1343-1348 , 2014
    2014
    Citations: 45
  • In situ study of emerging metallicity on ion-bombarded SrTiO3 surface
    H Gross, N Bansal, YS Kim, S Oh
    Journal of Applied Physics 110 (7) , 2011
    2011
    Citations: 44
  • Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect
    N Bansal, N Koirala, M Brahlek, MG Han, Y Zhu, Y Cao, J Waugh, ...
    Applied Physics Letters 104 (24) , 2014
    2014
    Citations: 43
  • Sr flux stability against oxidation in oxide-molecular-beam-epitaxy environment: Flux, geometry, and pressure dependence
    YS Kim, N Bansal, C Chaparro, H Gross, S Oh
    Journal of Vacuum Science & Technology A 28 (2), 271-276 , 2010
    2010
    Citations: 37
  • Dirac cone shift of a passivated topological Bi Se interface state
    GS Jenkins, DC Schmadel, AB Sushkov, HD Drew, M Bichler, ...
    Physical Review B—Condensed Matter and Materials Physics 87 (15), 155126 , 2013
    2013
    Citations: 34
  • Resonance effects in thickness-dependent ultrafast carrier and phonon dynamics of topological insulator Bi 2 Se 3
    S Kim, DH Shin, JH Kim, CW Jang, JW Park, H Lee, SH Choi, SH Kim, ...
    Nanotechnology 27 (4), 045705 , 2016
    2016
    Citations: 29
  • Simple self-gettering differential-pump for minimizing source oxidation in oxide-MBE environment
    YS Kim, N Bansal, S Oh
    Journal of Vacuum Science & Technology A 29 (4) , 2011
    2011
    Citations: 25