Analysis of Transition Metal Dichalcogenides-Based TFET Priya Kaushal, Gargi Khanna Nano Fet Devices Miniaturization Simulation and Applications Part 1, 2025 This article describes in detail Tunnel Field-Effect Transistors (TFETs) that are based on Transition Metal Dichalcogenides (TMDs). TFETs have garnered significant attention due to their potential for low-power electronics. Leveraging the unique properties of TMDs, including tunable bandgaps and high carrier mobilities, holds promise for enhancing TFET performance. The study explores the impact of TMDs on TFET characteristics, focusing on parameters such as bandgap engineering and current enhancement. Performance metrics of the device, such as subthreshold slope (SS), threshold voltage (Vth), on-state current (Ion), off-state current (Ioff), and Ion/Ioff ratios, are evaluated through comparative analyses of diverse channel materials, including MoS2, MoSe2, MoTe2, WS2, and WSe2. The research findings obtained from this analysis illuminate the possibility of TMD-based TFETs in the progression of low-power electronics and provide significant recommendations for further optimizing devices and investigating applications.
Metasurface-Based Realization of Photonic Crystal: Design, Fabrication, and Applications Chandani Dubey, Priya Kaushal, Dilip Singh, Prabhat Singh Nano Fet Devices Miniaturization Simulation and Applications Part 1, 2025 The present study investigates the use of metasurfaces in the fabrication of photonic crystals to harness their unique features for improved optical functions. Metasurfaces, comprised of subwavelength nanostructures, offer unprecedented control of polarization, amplitude, and phase. When combined with the inherent characteristics of photonic crystals, such as bandgap formation and light confinement, novel opportunities arise for manipulating and guiding light at the nanoscale. The present work investigates the design principles, fabrication techniques, and potential applications of metasurface-enhanced photonic crystals. This chapter highlights the hybrid integration of metasurface techniques with photonic crystals and covers essential design issues. It highlights nonlinear optical phenomena, increased light-matter interactions, and tuneable bandgaps in metasurface-enhanced photonic crystals. This paper investigates the reflection and transmission characteristics of metasurface-enhanced photonic crystals, shedding light on their unique optical properties and potential applications. Furthermore, the research investigates many applications, such as sensors, light emission devices, and information processing, highlighting the transformational potential of this combined method. Through theoretical modeling and experimental validation, we present a comprehensive analysis of how metasurface enhancements influence the reflection and transmission spectra, including the emergence of tuneable bandgaps and tailored optical responses. This chapter advances the understanding of metasurface-based photonic crystals by providing a roadmap for academics and engineers in the fast-expanding field of nanophotonics through a critical assessment of problems and future objectives. By providing insights into the intricate interplay between metasurfaces and photonic crystals, this work contributes to the advancement of nanophotonics and lays the foundation for the development of novel devices with enhanced optical functionalities.
Breast Cancer Detection Using Si-Doped MoS2Channel-Based Thickness Engineered TFET Biosensor Priya Kaushal, Gargi Khanna IEEE Sensors Letters, 2024 This letter investigates the electrical performance characteristics for breast cancer cell line detection by developing the Si-doped molybdenum disulfide thickness engineered tunnel field effect transistor biosensor. A complete study of the electrostatic field is presented, including the surface potential, electric field, transconductance (g<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub>), threshold voltage (V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub>), <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> current (I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub>), and subthreshold swing. The sensitivity is analyzed in terms of drain current (I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub>), g<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub>, V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub>, I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub>, I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub>/I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> ratio, and g<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub>. Further, this study investigates the impact of device geometry variations, specifically cavity thickness, and length on the sensitivity of drain current (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\text{S}_{\rm{I}_{\rm{ds}}}$</tex-math></inline-formula>), transconductance (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\text{S}_{\rm{g}_{\rm{m}}}$</tex-math></inline-formula> ), threshold voltage (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">${\text{S}}_{{{\rm{V}}_{{\rm{th}}}}}$</tex-math></inline-formula>), and <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> current (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">${\text{S}}_{{{\rm{I}}_{{\rm{ON}}}}}$</tex-math></inline-formula>). In addition, the impact of immobilized cell line occupancy on device performance has been examined. The presented biosensor is highly sensitive with increased cavity occupancy resulting in enhanced performance. As a result, array-based screening and diagnosis of breast cancer cells can be accomplished with the device, which is also economical and simpler to fabricate.
Thermal Behavior of Si-Doped MoS2-Based Step-Structure Double-Gate TFETs Priya Kaushal, Gargi Khanna Advanced Field Effect Transistors Theory and Applications, 2023 Field-effect transistor (FET) design has been aggressively scaled down in response to the steadily growing need for semiconductor devices that are compact and high-performing. The fundamental constraints on FET subthreshold swing and short-channel effects (SCEs) have led to a sudden rise in power loss. The operating constraint of nanotechnology transistors encourages the investigation of tunnel field-effect transistors (TFETs), which have an abrupt subthreshold swing and are resistant to SCEs. As a result, the study of nanostructured two-dimensional (2D) TFETs has recently received a lot of attention. When adopting 2D materials, the nanomaterial-based TFET has demonstrated a notable improvement in ON-state current and subthreshold swing. Molybdenum disulfide (MoS2) materials have features that make them viable substitutes for silicon (Si) in upcoming research. In this chapter, a Si-doped MoS2-based step-structure double-gate TFET (MoS2-SS-DG-TFET) with a wide variety of properties has been examined. To enhance device performance, this device uses a low dielectric thickness at the source–channel junction. Low dielectric thickness at the source side has improved the subthreshold swing, and having a thicker dielectric on the drain side has minimized ambipolar current. The MoS2 material has a special property: Its energy gap (Eg) varies with the number of material layers. In this device, three layers are used at the source area and one layer at the drain area of the channel. Using this varied number of layers causes small Eg at the source side to improve ON-current and large Eg at the drain side to minimize OFF-current. In order to evaluate performance at various temperatures, this study covers an investigation of the direct current (DC) and radiofrequency (RF)/analog characteristics based on temperature. The suggested device can be employed for high-temperature applications, as evidenced by the fluctuation in DC and analog characteristics. In the technology computer-aided design (TCAD) simulator, temperatures between 250 K and 500 K have been examined to measure the device's performance.
p-GaN HEMT-on-SiC Structural Optimization for High Drain Current and High Threshold Voltage Kashish Agarwal, Gargi Khanna, Priya Kaushal 2023 International Conference in Advances in Power Signal and Information Technology Apsit 2023, 2023 Normally-OFF (enhancement type) p-type Gallium Nitride (GaN) gate HEMT-on-Silicon Carbide (SiC) exhibiting a high breakdown voltage and large value of saturation current density is demonstrated in this paper. Benefiting from Aluminium Nitride (AIN) nucleation, Indium Nitride (InN) nucleation and Silcon Nitride (Si<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>) passivation layers with better handling of electric field lines on gate side and low drain leakage current, the structure with gate-to-drain length of 6 Mm shows a breakdown voltage (Vbr) of 840 V at 100 MA/mm drain current. The device shows a threshold voltage (V th) value 1.98 V at a drain current (Ids) of 100 MA/mm, an ON-current/OFF-current ratio (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf>) of 1.7×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup>, a small specific ON-condition resistance (Ron) of 2.5 ohm.cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, a high value of drain current density (0.316 A/mm) at gate voltage (V gs) of 8 V. A sub-threshold slope of 77 m V /dec is obtained. A high trans-conductance of 69 mS/mm is achieved. When Vgs is 8 V, the device exhibit low gate current (Igs) value (22.3 MA/mm). These results show huge potential of p-GaN gate structure HEMT-on-SiC for power application.
Impact of Temperature on the Performance of Tunnel Field Effect Transistor Ceur Workshop Proceedings, 2021
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