A soft error upset hardened 12T-SRAM cell for space and terrestrial applications Pavan Kumar Mukku, Rohit Lorenzo Memories Materials Devices Circuits and Systems, 2023 Various charged particles in space, including alpha particles, neutrons, heavy ions, and photons, pose reliability and stability concerns for memory circuits. These particles also create an ion track in the memory chip, disrupting the storage bit. The standard 6T SRAM is particularly susceptible to these disturbances. Several researchers suggest employing radiation-hardened SRAM cells to solve this problem. Most studies examine the inclusion of redundant nodes in the memory cell to recover the lost bit. This paper shows a new SEUH-12T SRAM memory cell with redundant nodes to deal with the soft error problem. The proposed SEUH-12T memory cell performance is compared to that of reliable radiation-hardened memory cells such as Quatro-10T, We-Quatro-12T, QCCS-12T, STS-10T, RHMC-12T, and RHWC-12T. The proposed SEUH-12T cell protects against single and multiple node disruptions by considering minimum sensitive nodes layout area separation concept. Furthermore, proposed SEUH-12T exhibits 8.5×/ 6.3×/ 5.6×/ 1.4×/ 1.2×/ 1.4×/ 1.04× times greater read stability than existing 6T-SRAM/ Quatro-10T/ We-Quatro-12T/ QCCS-12T/ STS-10T/ RHMC-12T/ RHWC-12T memory cells.
A Soft Error Upset Recovery SRAM Cell for Aerospace and Military Applications Pavan Kumar Mukku, Rohit Lorenzo IEEE Region 10 Annual International Conference Proceedings TENCON, 2023 Space radiation particles causes malfunction in electric circuits. It is especially susceptible to memory-sensitive storage devices. When it affects data stored in the memory circuit, it causes disruption. Standard 6T SRAM is incapable of mitigating this disruption. Consequently, numerous authors presented various resilience strategies. However, a tradeoff exists between memory cell efficiency and soft error probability. This article describes a polar design soft error upset recovery SRAM memory cell (SUR-16T) that effectively recovers lost data due to a high-energy particle strike. SUR-16T has superior write stability, lower hold power dissipation, and shorter write access time at PVT variations compared to the mentioned memory cells. Furthermore, SUR-16T has a 0.96x/ 1.15x/ 1.10x/ 1.18x/ 1.02x/ 1.64x greater critical charge than SEA-14T/ RHBD-13T/ RHMC-12T/ QCCS-12T/ NRHC-14T/ HRRT-13T at 0.8V. In addition, the proposed memory cell demonstrated a higher relative figure of merit than existing memory cells.
Double Node Upset Immune RHBD-14T SRAM Cell for Space and Satellite Applications Pavan Kumar. Mukku, Rohit. Lorenzo IEEE Access, 2023 Deep sub-micron memory devices play a crucial role in space electronic applications due to their susceptibility to single-event upset and double-node upset types of soft errors. When a charged particle from space hit a scaled memory circuit, the critical charge of sensitive storage nodes drops, and a node upset happens across the storage nodes. This paper describes the soft error immune RHBD-14T SRAM cell (SEI-14T) for space and satellite applications. The SEI-14T memory cell consists of two latch circuits coupled in a self-recovering, state-restoring feedback manner. In addition, SEI-14T memory cell mitigate single event upset (SEU) in all sensitive nodes and a portion of double node upset. By considering the sensitive node area separation approach, the remaining upset pairs were recovered. To show the relative performance of the SEI-14T, the state-of-the-art of other radiation-resistant memory cells, such as the Quatro-10T, RHM-12T, RHD-12T, RSP-14T, RHPD-12T, RH-14T, EDP-12T, and QCCS-12T are considered. Compared to all other mentioned memory cells, SEI-14T has superior write stability, and greater read stability than all other memory cells. Furthermore, at 0.8 V supply voltage, SEI-14T minimizes 23%, 12.28% and 20.82% of read access time, write access time and static power consumption respectively compared to existing memory cells. Moreover, the critical charge of SEI-14T was 6.56x/ 3.4x/ 5.75x/ 2.54x/ 2.47x/ 1.81x/ 1.63x/ 1.44x times larger than Quatro-10T/ RHM-12T/ RHD-12T/ RSP-14T/ RHPD-12T/ RH-14T/ EDP-12T/ QCCS-12T memory cells.
A review on radiation-hardened memory cells for space and terrestrial applications Mukku Pavan Kumar, Rohit Lorenzo International Journal of Circuit Theory and Applications, 2023 SummaryOver the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews different researchers and academicians who proposed resilience techniques and methods to mitigate this upset mess. In addition, we also investigated the importance of and the impact of on device scaling parameters in upset mechanism, probability of memory failure, and the figure of metrics for the stability of memory cells.
A Highly Stable PNN-PPN-10T SRAM Cell with Improved Reliability Mukku Pavan Kumar, Rohit Lorenzo, Junjurampalli Khaja, Avtar Singh 2023 3rd International Conference on Artificial Intelligence and Signal Processing Aisp 2023, 2023 A new PNN-PPN 10T static random access memory (SRAM) cell is presented in this paper. The proposed design aims to address stability of memory cell at worst-case analysis, leakage power analysis, read power analysis and soft error resilience analysis. The proposed design metrics are compared with existing memory cells such as 6T SRAM, feedback control-8T SRAM, low power-9T SRAM, PPN-10T SRAM, schmitt trigger-HT SRAM, low power-8T SRAM. Results observed that the proposed PPN-PNN 10T SRAM improved stability at worst-case analysis, reduces read delay by 0.98x/ 1.08x/ 1.15x/ 1.21x/ 1.15x/ 1.12x times shorter than 6T SRAM/ 8T SRAM/ 9T SRAM/ 10T SRAM/ 11T SRAM/ LP 8T SRAM cells respectively. Moreover, write delay is 1.13x/ 1.06x/ 1.27x times lower than 10T SRAM/ 11T SRAM/ 8T SRAM respectively. Furthermore, leakage power is also reduced. The simulation result shows that the proposed memory cell is suitable for stable and reliable cache memory applications.
Low Power and High-Performance Associative Memory Design Rohit Lorenzo, Sai Naga Snigdha Vajhala, Mukku Pavan Kumar 2022 2nd International Conference on Emerging Frontiers in Electrical and Electronic Technologies Icefeet 2022, 2022
Covariance-driven approach for active and passive devices recognition in RIS-aided optical networks K Upadhyay, M Bharti, M Kumar Sixth International Conference on Optical and Wireless Technologies (OWT … , 2026 2026
A Low-Leakage 11T SRAM Cell with Sleep Transistors for Low Leakage and Improved Stability P Vinayaka, R Lorenzo, MP Kumar 2025 5th International Conference on Artificial Intelligence and Signal … , 2025 2025
Comparative evaluation of robust low-power SRAM architectures E Abbasian, SU Haq, M Pavan Kumar, S Birla Engineering Research Express 7 (3), 032302 , 2025 2025 Citations: 2
A soft error self-resilience radiation-hardened 14T SRAM for aerospace applications G Anjaneyulu, AK Panigrahy, MP Kumar, SU Haq, A Darabi, E Abbasian, ... IEEE Access , 2025 2025 Citations: 6
DTQ-16T: Double Node Upset Tolerant Quadruple SRAM for Space Applications PK Bharti, G Prasad, MP Kumar, J Mekie 2025 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5 , 2025 2025 Citations: 2
A low leakage variations and high stability 9T SRAM cells G Anjaneyulu, MD Prakash, MP Kumar, SU Haq 2024 IEEE International Conference of Electron Devices Society Kolkata … , 2024 2024 Citations: 1
Epidemiology of Japanese Encephalitis in Central India after Implementing Immunization BV Tandale, PM Khude, PS Deshmukh, MS Qazi, GV Padmaja, R Narang, ... Journal of Pediatric Infectious Diseases 19 (03), 187-193 , 2024 2024 Citations: 1
A robust radiation resistant SRAM cell for space and military applications MP Kumar, R Lorenzo Integration 96, 102155 , 2024 2024 Citations: 13
A 14T Radiation Resistant Self-Recoverable SRAM Cell MP Kumar, R Lorenzo 2024 2nd International Conference on Device Intelligence, Computing and … , 2024 2024
Improvisation of dissolution profile of aceclofenac by using cocrystallization technique A Kumar, M Kumar Afr. J. Biomed. Res 27, 11518-24 , 2024 2024 Citations: 2
COMPARISON OF VOICE QUALITY IN PATIENTS WITH ORAL CANCER AT BOTH PRE AND POST TREATMENT STAGE L SAHOO, B THAKUR, M KUMAR, K SHARMA, SH SASI, N SINGH, ... INTERNATIONAL JOURNAL OF OTORHINOLARYNGOLOGY AND HEAD AND NECK SURGERY 10 (5 … , 2024 2024
An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors PK Mukku, R Lorenzo Microelectronics Reliability 152, 115303 , 2024 2024 Citations: 19
A soft error upset hardened 12T-SRAM cell for space and terrestrial applications PK Mukku, R Lorenzo Memories-Materials, Devices, Circuits and Systems 6, 100092 , 2023 2023 Citations: 12
A soft error upset recovery SRAM cell for aerospace and military applications PK Mukku, R Lorenzo TENCON 2023-2023 IEEE Region 10 Conference (TENCON), 744-749 , 2023 2023 Citations: 15
Design and analysis of radiation hardened 10 T SRAM cell for space and terrestrial applications PK Mukku, R Lorenzo Microsystem Technologies 29 (10), 1489-1500 , 2023 2023 Citations: 19
Double node upset immune RHBD-14T SRAM cell for space and satellite applications PK Mukku, R Lorenzo IEEE Access 11, 96256-96271 , 2023 2023 Citations: 21
A Highly Stable PNN-PPN-10T SRAM Cell With Improved Reliability MP Kumar, R Lorenzo, J Khaja, A Singh 2023 3rd International conference on Artificial Intelligence and Signal … , 2023 2023 Citations: 5
Soft error immune rhbd-14t sram cell for space and satellite applications PK Mukku, R Lorenzo IEEE Access 1 , 2023 2023 Citations: 3
A review on radiation‐hardened memory cells for space and terrestrial applications M Pavan Kumar, R Lorenzo International journal of circuit theory and applications 51 (1), 475-499 , 2023 2023 Citations: 54
A 1.2 v, radiation hardened 14t sram memory cell for aerospace applications MP Kumar, R Lorenzo 2022 IEEE Silchar Subsection Conference (SILCON), 1-7 , 2022 2022 Citations: 8
MOST CITED SCHOLAR PUBLICATIONS
Smart intelligent computing and applications SC Satapathy, V Bhateja, S Das Proceedings of the second international conference on SCI 1 , 2018 2018 Citations: 96
A review on radiation‐hardened memory cells for space and terrestrial applications M Pavan Kumar, R Lorenzo International journal of circuit theory and applications 51 (1), 475-499 , 2023 2023 Citations: 54
Double node upset immune RHBD-14T SRAM cell for space and satellite applications PK Mukku, R Lorenzo IEEE Access 11, 96256-96271 , 2023 2023 Citations: 21
An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors PK Mukku, R Lorenzo Microelectronics Reliability 152, 115303 , 2024 2024 Citations: 19
Design and analysis of radiation hardened 10 T SRAM cell for space and terrestrial applications PK Mukku, R Lorenzo Microsystem Technologies 29 (10), 1489-1500 , 2023 2023 Citations: 19
A soft error upset recovery SRAM cell for aerospace and military applications PK Mukku, R Lorenzo TENCON 2023-2023 IEEE Region 10 Conference (TENCON), 744-749 , 2023 2023 Citations: 15
Smart computing and informatics SC Satapathy, V Bhateja, S Das Proceedings of the First International Conference on SCI 1 , 2016 2016 Citations: 14
A robust radiation resistant SRAM cell for space and military applications MP Kumar, R Lorenzo Integration 96, 102155 , 2024 2024 Citations: 13
A soft error upset hardened 12T-SRAM cell for space and terrestrial applications PK Mukku, R Lorenzo Memories-Materials, Devices, Circuits and Systems 6, 100092 , 2023 2023 Citations: 12
Recent trends and challenges on low-power finfet devices PK Mukku, S Naidu, D Mokara, P Pydi Reddy, K Sunil Kumar Smart Intelligent Computing and Applications: Proceedings of the Third … , 2019 2019 Citations: 10
A 1.2 v, radiation hardened 14t sram memory cell for aerospace applications MP Kumar, R Lorenzo 2022 IEEE Silchar Subsection Conference (SILCON), 1-7 , 2022 2022 Citations: 8
A soft error self-resilience radiation-hardened 14T SRAM for aerospace applications G Anjaneyulu, AK Panigrahy, MP Kumar, SU Haq, A Darabi, E Abbasian, ... IEEE Access , 2025 2025 Citations: 6
A Highly Stable PNN-PPN-10T SRAM Cell With Improved Reliability MP Kumar, R Lorenzo, J Khaja, A Singh 2023 3rd International conference on Artificial Intelligence and Signal … , 2023 2023 Citations: 5
Low power and high-performance associative memory design R Lorenzo, SNS Vajhala, MP Kumar 2022 2nd International Conference on Emerging Frontiers in Electrical and … , 2022 2022 Citations: 4
An efficient flash memory devices MP Kumar, GJ Rao, PK Vani, AK Gupta, KS Kumar 2019 IEEE International Conference on Intelligent Systems and Green … , 2019 2019 Citations: 4
Soft error immune rhbd-14t sram cell for space and satellite applications PK Mukku, R Lorenzo IEEE Access 1 , 2023 2023 Citations: 3
Control of Aedes aegypti mosquito vector by attempting QSAR modeling on phenoxyacetamide-based inhibitors to target AChE1 A Naaz, M Kumar, A Sharma, D Teotia, S Nandi, M Saxena Journal of Developing Drugs 8, 192 , 2019 2019 Citations: 3
Comparative evaluation of robust low-power SRAM architectures E Abbasian, SU Haq, M Pavan Kumar, S Birla Engineering Research Express 7 (3), 032302 , 2025 2025 Citations: 2
DTQ-16T: Double Node Upset Tolerant Quadruple SRAM for Space Applications PK Bharti, G Prasad, MP Kumar, J Mekie 2025 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5 , 2025 2025 Citations: 2
Improvisation of dissolution profile of aceclofenac by using cocrystallization technique A Kumar, M Kumar Afr. J. Biomed. Res 27, 11518-24 , 2024 2024 Citations: 2
