Masoudeh Maleki

@fshiau.ac.ir

Assistant professor in Physics, Department of Science
Fouman and Shaft Branch, Islamic Azad University

Masoudeh Maleki


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https://researchid.co/masodeh.maleki
9

Scopus Publications

104

Scholar Citations

5

Scholar h-index

3

Scholar i10-index

Scopus Publications

  • Electronic structure and optical properties of nitrogen doped SnO2 - Simulation by DFT method
    M. Maleki
    Acta Physica Polonica A, 2020
    In this paper, nanostructured tin oxide doped with Nitrogen was investigated by first principle calculations. At first, band structure, density of states, and projected density of states were evaluated for pure tin oxide. Then, the effect of doping with Nitrogen was studied for cases when N replaces O atom, Sn atom, respectively, and in two interstitials situation. Results were compared with pure reference case. Except of one interstitial case, Nitrogen doping usually plays the role of a p-type doping, however the decrease of band gap occurs in all cases.
  • Ab initio calculations of the effect of N, Nb, and Ta doping on the electronic structure and optical properties of SnO2
    M. Maleki
    Journal of Computational Electronics, 2020
    Nanostructured nitrogen-, niobium-, and tantalum-doped tin oxides are investigated by first-principle calculations. First, the band structure, bond length, density of states, and projected density of states of pure tin oxide are evaluated. Then, the effect of nitrogen, niobium, and tantalum doping substituting O and Sn is compared with the pure case. In all cases, substitutional doping with N results in p-type conductivity whereas n-type conductivity results from Nb and Ta doping. Substitution of O with N and of Sn with Nb or Ta increases the bandgap of the structure, while substitution of Sn and Nb with N reduces the bandgap.
  • Si/ZnO nano structured heterojunctions by APCVD method
    Iranian Journal of Materials Science and Engineering, 2015
  • Dependence of ZnO nanostructured thin films properties on growth temperature by APCVD method
    M. Maleki, S.M. Rozati
    Acta Physica Polonica A, 2015
    In this paper, the e ect of substrate temperature on the electrical, structural, morphological and optical properties of nanostructured polycrystalline zinc oxide thin lms were investigated by the Hall measurement, Xray di raction, scanning electron microscopy and UV-visible spectrophotometer, respectively. Then these modi ed thin lms were deposited on two kinds of single crystal and polycrystalline of nand p-type Si in three di erent substrate temperatures of 300, 400 and 500 ◦C by low cost atmospheric pressure chemical vapor deposition method. Like the samples grown on the glass substrate, with increase of the temperature in samples grown on single crystal Si, preferred orientation changes from (100) to (002), while in samples deposited on poly crystalline Si, preferred orientation remains (100).
  • Investigation of the effect of the substrate position relative to the source on the optoelectrical and structural properties of pure nanostructured tin oxide by APCVD
    Masoudeh Maleki, Seyed Mohammad Rozati
    Chemical Vapor Deposition, 2014
    Pure tin oxide (TO) films are deposited onto glass substrates at various substrate angles relative to the source position by a simple and inexpensive method of atmospheric pressure (AP)CVD. The deposition temperature is constant at about 500°C, and oxygen with a flow rate of 100 sccm is used as both the carrier gas and the oxidizing agent. Investigation of the sheet resistance shows that resistivity varies between 106 and. 241 Ω/□. X-ray diffraction (XRD) also reveals that the structure is polycrystalline with the preferred orientation of (110) for all films deposited at the various substrate angles. Scanning electron microscopy (SEM) images also reveal a uniform and impacted structure on the surface of all the films. Optical properties show clear changes as a result of the substrate position versus the source.
  • An economic CVD techniéue for pure SnO2 thin films deposition: Temperature effects
    M MALEKI, S M ROZATI
    Bulletin of Materials Science, 2013
    A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and transparency of the films has been studied. The best sheet resistance obtained at substrate temperature of 500 °C was about 27 Ω/cm2. X-ray diffraction showed that the structure of deposited films was polycrystalline with a grain size between 150–300 Å. The preferred orientation was (211) for films deposited at substrate temperature of about 500 °C. FESEM micrographs revealed that substrate temperature is an important factor for increasing grain size and modifies electrical parameters. UV-visible measurement showed reduction of transparency and bandgap of the layers with increasing substrate temperature.
  • Structural, electrical and optical properties of transparent conducting SnO 2 films: Effect of the oxygen flow rate
    M Maleki, S M Rozati
    Physica Scripta, 2012
    Pure tin oxide films were deposited onto glass substrate at different oxygen flow rates by a simple and inexpensive method of air pressure chemical vapor deposition. The deposition temperature was kept constant at about 500 °C, and oxygen with a flow rate of 0–400 sccm was used as both a carrier gas and the oxidizing agent. Investigation of the electrical parameters variations showed that these parameters vary with oxygen flow rate, reaching an optimum value at the flow rate of 100 sccm. X-ray diffraction (XRD) also revealed the structure to be polycrystalline for all films deposited at different oxygen flow rates. In agreement with the XRD results, field emission scanning electron microscopy micrographs showed a reduction in grain size corresponding to increasing flow rates until 200 sccm, and after that, with a further increase of flow rate, the grain size increased.
  • Effects of hydrostatic pressure on the donor binding energy and intra donor transition matrix elements in GaAs-GaAlAs quantum wells
    H. Panahi, M. Maleki
    Physica Status Solidi B Basic Research, 2008
    The effects of hydrostatic pressure on the donor binding energy in GaAs–Ga0.7Al0.3As quantum wells have been studied in the effective mass approximation, using a variational approach for hydrogenic ground state 1s and excited states 2s, 2px, 3px. Results obtained show that the donor binding energy variation with the well width and the position of impurity under pressure is similar to that without pressure. The intra donor squared transition matrix elements are calculated as functions of impurity position in the presence of hydrostatic pressure. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
  • Binding energies of donor states in GaAs-GaAlAs quantum wells under hydrostatic pressure
    H. Panahi, M. Maleki
    Journal of Applied Sciences, 2008

RECENT SCHOLAR PUBLICATIONS

  • Electronic Structure and Optical Properties of Nitrogen Doped SnO2-Simulation by DFT Method
    M Maleki
    Acta Physica Polonica, A. 137 (3) , 2020
    2020
    Citations: 5
  • Ab initio calculations of the effect of N, Nb, and Ta doping on the electronic structure and optical properties of SnO 2
    M Maleki
    Journal of Computational Electronics 19 (1), 47-54 , 2020
    2020
    Citations: 4
  • Si/ZnO NANO STRUCTURED HETEROJUNCTIONS BY APCVD METHOD
    M Maleki, M Rozati
    Iranian Journal of Materials Science and Engineering 12 (4), 19-27 , 2015
    2015
    Citations: 1
  • Dependence of ZnO Nanostructured Thin Films Properties on Growth Temperature by APCVD Method
    M Maleki, SM Rozati
    Acta Physica Polonica, A. 28 (3) , 2015
    2015
    Citations: 7
  • Investigation of the Effect of the Substrate Position Relative to the Source on the Optoelectrical and Structural Properties of Pure Nanostructured Tin Oxide by APCVD
    M Maleki, SM Rozati
    Chemical Vapor Deposition 20 (10-11-12), 352-355 , 2014
    2014
    Citations: 5
  • Dependence of Si/SnO2 Heterojunction Properties on Growth Temperature and Type of Silicon**
    M Maleki, SM Rozati
    Chemical Vapor Deposition 19 (7-8-9), 290-294 , 2013
    2013
    Citations: 3
  • An economic CVD technique for pure SnO 2 thin films deposition: Temperature effects
    M Maleki, SM Rozati
    Bulletin of Materials Science 36 (2), 217-221 , 2013
    2013
    Citations: 38
  • Investigation of electrical properties and surface morphology In Nitrogen doped Tin oxide By APCVD method; Barresi-e khavas-e elektriki va morfolozhi-e sathi dar oksid-e ghal'e …
    M Maleki, M Rozati
    2012
  • Structural, electrical and optical properties of transparent conducting SnO2 films: effect of the oxygen flow rate
    M Maleki, SM Rozati
    Physica Scripta 86 (1), 015801 , 2012
    2012
    Citations: 21
  • Investigation of electrical properties and surface morphology In Nitrogen doped Tin oxide By APCVD method
    M Maleki, M Rozati
    2012
  • Binding Energies of Donor States in GaAs-GaAlAs Quantum Wells Under Hydrostatic Pressure
    H Panahi, M Maleki
    Journal of Applied Sciences 8 (4), 636-641 , 2008
    2008
    Citations: 8
  • Binding Energies of Donor States in GaAs-GaAlAs Quantum Wells Under Hydrostatic Pressure
    H Panahi, M Maleki
    Journal of Applied Sciences 8 (4), 636-641 , 2008
    2008
    Citations: 8
  • Effects of hydrostatic pressure on the donor binding energy and intra donor transition matrix elements in GaAs–GaAlAs quantum wells
    HPM Maleki
    physica status solidi (b) 245 (5), 967 , 2008
    2008
    Citations: 12

MOST CITED SCHOLAR PUBLICATIONS

  • An economic CVD technique for pure SnO 2 thin films deposition: Temperature effects
    M Maleki, SM Rozati
    Bulletin of Materials Science 36 (2), 217-221 , 2013
    2013
    Citations: 38
  • Structural, electrical and optical properties of transparent conducting SnO2 films: effect of the oxygen flow rate
    M Maleki, SM Rozati
    Physica Scripta 86 (1), 015801 , 2012
    2012
    Citations: 21
  • Effects of hydrostatic pressure on the donor binding energy and intra donor transition matrix elements in GaAs–GaAlAs quantum wells
    HPM Maleki
    physica status solidi (b) 245 (5), 967 , 2008
    2008
    Citations: 12
  • Binding Energies of Donor States in GaAs-GaAlAs Quantum Wells Under Hydrostatic Pressure
    H Panahi, M Maleki
    Journal of Applied Sciences 8 (4), 636-641 , 2008
    2008
    Citations: 8
  • Binding Energies of Donor States in GaAs-GaAlAs Quantum Wells Under Hydrostatic Pressure
    H Panahi, M Maleki
    Journal of Applied Sciences 8 (4), 636-641 , 2008
    2008
    Citations: 8
  • Dependence of ZnO Nanostructured Thin Films Properties on Growth Temperature by APCVD Method
    M Maleki, SM Rozati
    Acta Physica Polonica, A. 28 (3) , 2015
    2015
    Citations: 7
  • Electronic Structure and Optical Properties of Nitrogen Doped SnO2-Simulation by DFT Method
    M Maleki
    Acta Physica Polonica, A. 137 (3) , 2020
    2020
    Citations: 5
  • Investigation of the Effect of the Substrate Position Relative to the Source on the Optoelectrical and Structural Properties of Pure Nanostructured Tin Oxide by APCVD
    M Maleki, SM Rozati
    Chemical Vapor Deposition 20 (10-11-12), 352-355 , 2014
    2014
    Citations: 5
  • Ab initio calculations of the effect of N, Nb, and Ta doping on the electronic structure and optical properties of SnO 2
    M Maleki
    Journal of Computational Electronics 19 (1), 47-54 , 2020
    2020
    Citations: 4
  • Dependence of Si/SnO2 Heterojunction Properties on Growth Temperature and Type of Silicon**
    M Maleki, SM Rozati
    Chemical Vapor Deposition 19 (7-8-9), 290-294 , 2013
    2013
    Citations: 3
  • Si/ZnO NANO STRUCTURED HETEROJUNCTIONS BY APCVD METHOD
    M Maleki, M Rozati
    Iranian Journal of Materials Science and Engineering 12 (4), 19-27 , 2015
    2015
    Citations: 1
  • Investigation of electrical properties and surface morphology In Nitrogen doped Tin oxide By APCVD method; Barresi-e khavas-e elektriki va morfolozhi-e sathi dar oksid-e ghal'e …
    M Maleki, M Rozati
    2012
  • Investigation of electrical properties and surface morphology In Nitrogen doped Tin oxide By APCVD method
    M Maleki, M Rozati
    2012