Condensed Matter Physics, Surfaces, Coatings and Films, Surfaces and Interfaces, Electronic, Optical and Magnetic Materials
108
Scopus Publications
3206
Scholar Citations
32
Scholar h-index
73
Scholar i10-index
Scopus Publications
Record Energy Storage Performance Metrics in Ferroelectric Hafnia-Based Films through Heterostructure Design Ampattu R. Jayakrishnan, Nuno Estrócio, Inês Silva, Raluca Negrea, Marian C. Istrate, Koppole C. Sekhar, Luís Marques, Judith L. MacManus‐Driscoll, Ignasi Fina, Florencio Sánchez, José P. B. Silva Advanced Functional Materials, 2026 Capacitive energy storage is part of a promising energy harvesting and storage solution to power Internet of Things (IoT) sensors, overcoming the critical limitations of conventional supercapacitors and micro‐batteries. Moreover, achieving high recoverable energy storage density ( ESD ) and high efficiency ( η ) simultaneously is a key goal in energy storage, often requiring hybrid systems (e.g., combining batteries and supercapacitors) to balance the trade‐offs. Here, we demonstrate a ultra‐thin film capacitor with unprecedented high ESD that can be efficiently released at low operating voltage. This is achieved by using a novel heterostructure design combining ferroelectric La‐doped HfO 2 and a ferroelectric perovskite that is a relaxor induced by polar nanoregions, which enables a low hysteresis loss in the capacitor, thereby leading to an improved η . Additionally, the relaxor ferroelectric layer thickness was optimized to give an optimum voltage drop to allow high maximum polarization and low remnant polarization, the former to allow an ESD of over 50 J/cm 3 , and the latter to allow ŋ to be maximized at ∼95%. Therefore, our fluorite/perovskite heterostructure design and unique materials strategy have together provided a novel way to achieve unprecedented dielectric energy storage properties, proving a new route to electrostatic energy storage for autonomous IoT sensors.
Leveraging the integration of perovskite BaTiO3 on ferroelectric fluorite HfO2 to enhance energy storage cyclability and efficiency Wenjing Dong, César Magén, Jingye Zou, Alberto Quintana, Romain Bachelet, Guillaume Saint-Girons, José P.B. Silva, Florencio Sánchez, Ignasi Fina Nano Energy, 2026 Perovskite relaxor ferroelectrics and antiferroelectrics have been the workhorse materials for energy storage electrostatic devices. Recently, there has been growing interest in ferroelectric HfO 2 , which is highly compatible with fabrication processes of the electronics industry and scalable down to the ultrathin limit. However, wake-up and fatigue phenomena in ferroelectric HfO 2 can limit the stability of energy storage capacity upon cycling. Interface engineering using simple A x O y (Ir, Ce, Ru, Al, La and Zr) binary oxides as capping layers is a promising strategy to mitigate these effects, but previous works have focused on optimizing high remanent polarization for memory applications. In contrast, for energy storage applications, the optimal parameters differ from those required for memory devices. Therefore, alternatives to A x O y capping layers must be investigated. Here, we demonstrate that the integration of the perovskite ferroelectric BaTiO 3 with the fluorite ferroelectric Hf 0.5 Zr 0.5 O 2 yields highly stable energy storage density and enhanced efficiency over cycling and at high temperatures. We study a set of samples combining epitaxial Hf 0.5 Zr 0.5 O 2 grown on Si(001) with polycrystalline BaTiO 3 of various thicknesses. The ferroelectricity of Hf 0.5 Zr 0.5 O 2 is preserved and the efficiency is enhanced without compromising the high breakdown voltage. The device performance is optimal for a BaTiO 3 thickness of 10 nm, exhibiting an energy storage density of 100 J/cm 3 , efficiency of 80% and breakdown field of 12 MV/cm. We attribute this remarkable performance to the distinct electrical properties of BaTiO 3 compared with previously investigated A x O y capping layers. The investigations are carried out on a system that combines memory and energy storage properties, enabling the design of prospective devices in which energy recovery and memory functionalities are integrated at the chip level. • BaTiO 3 has been successfully integrated on epitaxial BaTiO 3 grown on silicon. • Energy storage density 100 J/cm 3 , efficiency of 80% and breakdown field of 12 MV/cm are achieved. • A stable energy storage density of ≈25 J/cm 3 is maintained over 10 9 cycles. • Both the energy storage density and efficiency can be tuned by controlling the BaTiO₃ layer thickness.
Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films via Novel Interface Layer Approach Ji Soo Kim, Benedetta Gaggio, Babak Bakhit, Veniero Lenzi, Luis Marques, Simon M. Fairclough, Nives Strkalj, Duk‐Hyun Choe, José P. B. Silva, J. L. MacManus‐Driscoll Advanced Science, 2026 Ferroelectric doped hafnium oxide (HfO 2 ) has emerged as CMOS‐compatible and scalable ferroelectric for next‐generation memory/in‐memory computing devices. However, its high coercive field (E c ) and limited endurance remain key obstacles. Here, a ≈25% reduction in E c from 3.3 to 2.5 MV/cm and an order of magnitude increase in endurance by implementing an ultrathin (≈2 nm) 5 at.% Sm‐doped HZO (HZSO) ionic conducting underlayer for HZO are shown. X‐ray photoelectron spectroscopy (XPS) results reveal the absence of redox effects during primary ferroelectric switching in HZSO, unlike in HZO. NEB calculations show that V O ‐rich HZSO lowers the switching barrier compared to that of HZO, which agrees with experimental results. Notably, these improvements are achieved in HZSO|HZO without compromising P r compared to HZO. This approach presents a new powerful route to engineering ferroelectric properties in doped HfO 2 , applicable to both epitaxial and polycrystalline films for future memory devices.
CMOS-Compatible ZrO2-Based Film for Photoplethysmography Sensors Enabling Accurate and Sensitive Health Monitoring Nuno Estrócio, Ampattu R. Jayakrishnan, Katarzyna Gwozdz, Adrian Kaim, Ji Soo Kim, Alexandre Silva, Veniero Lenzi, Paweł Noszczyk, Surya Nair, Mário A. C. Castro Pereira, Luís S. A. Marques, Robert L. Z. Hoye, Judith L. MacManus-Driscoll, José P. B. Silva ACS Applied Materials and Interfaces, 2026 Photoplethysmography (PPG) is a simple noninvasive technique for the detection of multiple cardiovascular parameters, such as heart rate, blood oxygen saturation (SpO 2 ), systolic blood pressure, and diastolic blood pressure. However, the current commercial PPG technology is limited by several factors, including rigidity, bulkiness, high cost, high power consumption of ∼10’s mW, poor operational stability under ambient conditions, and susceptibility to motion artifacts. In this work, we overcome many of these limitations using a novel self-powered, miniaturized, low-cost, stable PPG sensor based on a simple CMOS-compatible fluorite-type ferro/pyroelectric Hf x Zr 1– x O 2 thin-film photodetector device. Our novel self-powered photodetector shows 26% higher responsivity and 23% improved sensitivity (perfusion index of 3.7%) for sensing blood volume changes in microvascular tissues compared to conventional PPGs, and a very high accuracy ( < 2% error) in the estimation of SpO 2 . The simple sensor has strong prospects for replacing current PPG sensors for health monitoring applications.
Achieving High ON State Current through Ferroelectric Polarization-Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva Advanced Functional Materials, 2026 In this work, we report on a ferroelectric tunnel junction based on an epitaxial undoped orthorhombic 3‐nm‐thin HfO 2 film. An OFF/ON resistance ratio of ≈83 and a high ON state current density of ≈5 A/cm 2 , important for fast device readout, is achieved through ferroelectric polarization switching, which causes electron accumulation and depletion in the adjacent LSMO electrode. Oxygen vacancy movement inside the HfO 2 is observed, but plays at most a minor role for switching. The devices show stable switching endurance of over 10 6 switching cycles, low write voltages of ±3 V, both outperforming previous epitaxial HfO 2 FTJs, 16 measured resistance states, and neuromorphic capability by voltage pulse trains and spike‐timing‐dependent plasticity. This strong performance is achieved by designing ferroelectric tunnel junctions at the materials level of undoped HfO 2, which has a higher tunneling probability than HZO and a stabilized oxygen distribution. The resulting device design shows great promise for neuromorphic and analog memory applications.
Ab initio study of doping effects on the ferroelectric and piezoelectric properties of ZrO₂ Alexandre Silva, Richard Ganser, José P.B. Silva, Alfred Kersch, Veniero Lenzi, Luís Marques Acta Materialia, 2025 Ferroelectric binary oxides show great promise for application in energy storage, non-volatile memories, and neuromorphic computing devices. Compared to hafnia (HfO 2 ), zirconia (ZrO 2 ) thin films have been understudied in spite of significant recent progress. Doping has emerged as a promising tool to tune the ferroelectric properties of HfO 2 and Hf x Zr 1-x O 2 (HZO). However, an extensive study of the effects of doping on the structural and ferroelectric properties of ZrO 2 is still widely missing. In this study, through density functional theory (DFT) and ab initio molecular dynamics (AIMD) calculations we investigate the effects of B, Si, Al, Mg, Sc, Ca, Ce, Ta, Hf, Y, Sr, La, Ba and Rb doping on the structural distortions, relative phase stability, phase transition temperatures, spontaneous polarization and piezoelectric response of the monoclinic (m-), polar orthorhombic (o-) and tetragonal (t-) phases of ZrO 2 at 3.125 and 6.25 cat% doping concentration. We demonstrate that the spontaneous polarization magnitude in ZrO₂ can be significantly enhanced through doping with Si, B, and Al. In addition, our results reveal that the relative phase stability and phase transition temperatures of ZrO₂ can be tuned by doping. Specifically, our calculations confirm that Si doping promotes the stabilization of the t-phase in ZrO₂. Furthermore, we show that doping shifts the phase transition temperature, leading to substantial improvements in piezoelectric response, with up to a sevenfold increase observed in Al-doped ZrO₂. Consequently, this work highlights the most promising dopants capable of enhancing the ferroelectric and piezoelectric properties of ZrO₂ thin films.
Engineering Pb-free relaxor ferroelectric thin films for low voltage energy storage applications Duarte J. M. Ribeiro, Surya K. P. Nair, Ampattu R. Jayakrishnan, João Oliveira, Grégoire Magagnin, David Albertini, Yann Walter, Koppole C. Sekhar, J. Agostinho Moreira, Bernardo G. Almeida, Brice Gautier, Bertrand Vilquin, Luís Marques, Mario Pereira, José P. B. Silva Nanoscale, 2025 Pulsed power technologies demand dielectric capacitors that possess a high energy storage density and efficiency at low applied electric fields/voltages.
Coercive Field Control in Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films by Nanostructure Engineering Ji Soo Kim, Nives Strkalj, Alexandre Silva, Veniero Lenzi, Luis Marques, Megan O. Hill, Ziyi Yuan, Yi-Xuan Liu, Maximilian T. Becker, Simon M. Fairclough, Caterina Ducati, Yizhi Zhang, Jianan Shen, Zedong Hu, Hongyi Dou, Haiyan Wang, José P. B. Silva, Judith L. MacManus-Driscoll ACS Applied Materials and Interfaces, 2025 The discovery of ferroelectric hafnium oxide has spurred great interest in the semiconductor industry, enabled by its complementary metal-oxide-semiconductor compatibility and scalability. However, many questions remain regarding the origin of the ferroelectric phases and the tunability of ferroelectric properties. In this work, we explore the influence of laser fluence on coercive field (Ec) in 10 nm-thick epitaxial rhombohedrally distorted orthorhombic (r-d o) Hf0.5Zr0.5O2 (HZO) films grown by pulsed laser deposition on La0.7Sr0.3MnO3-buffered (001) SrTiO3 substrates. When laser fluence is decreased from 1.3 J cm-2 to 0.5 J cm-2, the Ec decreases from ∼3.3 to ∼2.7 MV/cm. Lower laser fluence produces pure (111) oriented grains, while higher laser fluence produces an additional (11-1) orientation, leading to low angle tilt grain boundaries and associated dislocations which can act as domain pinning sites. The stabilization of the (11-1) orientation and the grain tilting at higher deposition energetics are consistent with density functional theory calculations. To achieve a low Ec in HZO, which is important for energy-efficient ferroelectric memory applications, low energetic growth conditions are required, producing the most highly perfect films.
Tri-layered Si/Co3O4/ZnO heterojunction for high-performance visible photodetection Leonardo Domingues, Ampattu R. Jayakrishnan, Adrian Kaim, Katarzyna Gwozdz, Marian C. Istrate, Corneliu Ghica, Mario Pereira, António Castro, Luís Marques, Robert L. Z. Hoye, Judith L. MacManus-Driscoll, José P. B. Silva Journal of Materials Chemistry C, 2024
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder APL Materials, 2023
Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing Anna P. S. Crema, Marian C. Istrate, Alexandre Silva, Veniero Lenzi, Leonardo Domingues, Megan O. Hill, Valentin S. Teodorescu, Corneliu Ghica, Maria J. M. Gomes, Mario Pereira, Luís Marques, Judith L. MacManus‐Driscoll, José P. B. Silva Advanced Science, 2023
Ferroelectricity and negative piezoelectric coefficient in orthorhombic phase pure ZrO2 thin films José P.B. Silva, Marian C. Istrate, Markus Hellenbrand, Atif Jan, Maximilian T. Becker, Joanna Symonowicz, Fábio G. Figueiras, Veniero Lenzi, Megan O. Hill, Corneliu Ghica, Konstantin N. Romanyuk, Maria J.M. Gomes, Giuliana Di Martino, Luís Marques, Judith L. MacManus-Driscoll Applied Materials Today, 2023
Optical properties of flexible ceramic films S. Angitha, Kevin V. Alex, J.P.B. Silva, K.C. Sekhar, M. Tasneem, K. Kamakshi Advanced Flexible Ceramics Design Properties Manufacturing and Emerging Applications, 2023
Electrical properties of flexible ceramics N.S. Kiran Kumar, A.R. Jayakrishnan, R. Rugmini, J.P.B. Silva, M. Pereira, Sathish Sugumaran, K.C. Sekhar Advanced Flexible Ceramics Design Properties Manufacturing and Emerging Applications, 2023
Touch sensor and photovoltaic characteristics of CuSbS2 thin films Nadia Chlibi, José P.B. Silva, Eliana M.F. Vieira, Luís M. Goncalves, Joaquim Agostinho Moreira, Adil Chahboun, Hassen Dahman, Mário Pereira, Maria J.M. Gomes, Lassaad El Mir Ceramics International, 2021
All-Oxide p-n Junction Thermoelectric Generator Based on SnO xand ZnO Thin Films Eliana M. F. Vieira, José P. B. Silva, Kateřina Veltruská, Cosmin M. Istrate, Veniero Lenzi, Vanira Trifiletti, Bruno Lorenzi, Vladimír Matolín, Corneliu Ghica, Luis Marques, Oliver Fenwick, Luis M. Goncalves ACS Applied Materials and Interfaces, 2021
Energy harvesting technologies for structural health monitoring of airplane components—a review Saša Zelenika, Zdenek Hadas, Sebastian Bader, Thomas Becker, Petar Gljušćić, Jiri Hlinka, Ludek Janak, Ervin Kamenar, Filip Ksica, Theodora Kyratsi, Loucas Louca, Miroslav Mrlik, Adnan Osmanović, Vikram Pakrashi, Ondrej Rubes, Oldřich Ševeček, José Silva, Pavel Tofel, Bojan Trkulja, Runar Unnthorsson, Jasmin Velagić, Željko Vrcan Sensors Switzerland, 2020
Narrow optical gap ferroelectric Bi2ZnTiO6 thin films deposited by RF sputtering Fábio G. Figueiras, J. Ramiro A. Fernandes, J. P. B. Silva, Denis O. Alikin, Eugénia C. Queirós, César R. Bernardo, Y. R. Barcelay, Angelika Wrzesińska, M. S. Belsley, Bernardo Almeida, Pedro B. Tavares, Andrei L. Kholkin, J. Agostinho Moreira, Abílio Almeida Journal of Materials Chemistry A, 2019
Multiscale in modelling and validation for solar photovoltaics Tareq Abu Hamed, Nadja Adamovic, Urs Aeberhard, Diego Alonso-Alvarez, Zoe Amin-Akhlaghi, Matthias Auf der Maur, Neil Beattie, Nikola Bednar, Kristian Berland, Stefan Birner, Marco Califano, Ivana Capan, Bostjan Cerne, Irinela Chilibon, James. P. Connolly, Frederic Cortes Juan, Jose Coutinho, Christin David, Knut Deppert, Vesselin Donchev, Marija Drev, Boukje Ehlen, Nicholas Ekins-Daukes, Jacky Even, Laurentiu Fara, David Fuertes Marron, Alessio Gagliardi, Blas Garrido, Violetta Gianneta, Maria Gomes, Jean-Francois Guillemoles, Mircea Guina, Janne Halme, Mateja Hocevar, Lucjan Jacak, Witold Jacak, Zoran Jaksic, Lejo k. Joseph, Spyridon Kassavetis, Vaidotas Kazukauskas, Jean-Paul Kleider, Katarzyna Kluczyk, Radovan Kopecek, Ursa Opara Krasovec, Jean-Louis Lazzari, Efrat Lifshitz, Martin Loncaric, Søren Peder Madsen, Antonio Marti Vega, Denis Mencaraglia, Maria E. Messing, Felipe Murphy Armando, Androula G. Nassiopoulou, Ahmed Neijm, Akos Nemcsics, Victor Neto, Laurent Pedesseau, Clas Persson, Konstantinos Petridis, Lacramioara Popescu, Georg Pucker, Jelena Radovanović, Julio C. Rimada, Mimoza Ristova, Ivana Savic, Hele Savin, Marushka Sendova-Vassileva, Abdurrahman Sengul, José Silva, Ullrich Steiner, Jan Storch, Emmanuel Stratakis, Shuxia Tao, Pavel Tomanek, Stanko Tomić, Antti Tukiainen, Rasit Turan, Jose Maria Ulloa, Shengda Wang, Fatma Yuksel, Jaroslav Zadny, Javad Zarbakhsh EPJ Photovoltaics, 2018
Structural and Optical Properties of Calcium-doped Zinc Oxide Thin Film Deposited by the PLD Method IH Mejri, JPB Silva, M Nouiri, A Bouloufa, ZB Ayadi, L El Mir Jordan Journal of Physics 19 (1), 65-74 , 2026 2026
Record Energy Storage Performance Metrics in Ferroelectric Hafnia‐Based Films through Heterostructure Design AR Jayakrishnan, N Estrócio, I Silva, R Negrea, MC Istrate, KC Sekhar, ... Advanced Functional Materials, e75213 , 2026 2026
Research data supporting" Achieving high ON state current through ferroelectric polarization-dependent interfacial resistance switching in undoped orthorhombic HfO2 films" M Hellenbrand, N Estrócio, JS Kim, B Bakhit, MC Istrate, C Ghica, ... 2026
Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO 2 Films M Hellenbrand, N Estrócio, JS Kim, B Bakhit, MC Istrate, C Ghica, ... Advanced Functional Materials, e74667 , 2026 2026
From rigid silicon to soft hybrids: A review on emerging materials for wearable photoplethysmography sensors K Gwóźdź, A Kaim, JPB Silva APL Electronic Devices 2 (1) , 2026 2026
Leveraging the integration of perovskite BaTiO3 on ferroelectric fluorite HfO2 to enhance energy storage cyclability and efficiency W Dong, C Magén, J Zou, A Quintana, R Bachelet, G Saint-Girons, ... Nano Energy, 111810 , 2026 2026
CMOS-Compatible ZrO2-Based Film for Photoplethysmography Sensors Enabling Accurate and Sensitive Health Monitoring N Estrócio, AR Jayakrishnan, K Gwozdz, A Kaim, JS Kim, A Silva, V Lenzi, ... ACS Applied Materials & Interfaces , 2026 2026
Reducing Coercive Field and Improving Endurance in Ferroelectric Epitaxial Hf 0.5 Zr 0.5 O 2 Thin Films via Novel Interface Layer Approach JS Kim, B Gaggio, B Bakhit, V Lenzi, L Marques, SM Fairclough, N Strkalj, ... Advanced Science 13 (5), e17314 , 2026 2026 Citations: 2
Tailoring the metal-oxide interface for improving fatigue performance in HfO2-based ferroelectrics YX Liu, Z Yuan, B Bakhit, H Yu, J Lu, JS Kim, K Wang, J Silva, ... 2025
Ab initio study of doping effects on the ferroelectric and piezoelectric properties of ZrO₂ A Silva, R Ganser, JPB Silva, A Kersch, V Lenzi, L Marques Acta Materialia, 121584 , 2025 2025 Citations: 3
Hard way or hardware? Taking the heat out of AI AR Jayakrishnan, M Hellenbrand, S Dixon, A Mehonic, JPB Silva, ... APL Machine Learning 3 (3) , 2025 2025
ZnO nanostructures for biosensing applications: Recent advances, challenges, and future perspectives M Bhakyalatha, S Sathish, KC Sekhar, JPB Silva, K Kamakshi Microchemical Journal 213, 113893 , 2025 2025 Citations: 15
Research data supporting" Coercive field control in epitaxial ferroelectric Hf0. 5Zr0. 5O2 thin films by nanostructure engineering" JS Kim, N Strkalj, A Silva, V Lenzi, L Marques, M Hill, Z Yuan, Y Liu, ... 2025
Coercive Field Control in Epitaxial Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films by Nanostructure Engineering JS Kim, N Strkalj, A Silva, V Lenzi, L Marques, MO Hill, Z Yuan, YX Liu, ... ACS applied materials & interfaces 17 (17), 25442-25450 , 2025 2025 Citations: 11
Ultra‐Sensitive, Self‐powered, CMOS‐Compatible Near‐Infrared Photodetectors for Wide‐Ranging Applications NE Silva, AR Jayakrishnan, A Kaim, K Gwozdz, L Domingues, JS Kim, ... Advanced Functional Materials 35 (14), 2416979 , 2025 2025 Citations: 25
Coupling between piezotronics and other physical phenomena L Wang, S Liu, JL MacManus-Driscoll, JPB Silva MRS Bulletin 50 (2), 174-180 , 2025 2025 Citations: 5
Comortamentos aditivos e dependências em Vila Nova de Gaia: breve retrato I Maia, JP Silva, R Madeira 2025
HfO2 and ZrO2-based thin films for electrical energy storage AR Jayakrishnan, LS Marques, JPB Silva Ferroelectricity in Doped Hafnium Oxide, 699-712 , 2025 2025
Engineering Pb-free relaxor ferroelectric thin films for low voltage energy storage applications DJM Ribeiro, SKP Nair, AR Jayakrishnan, J Oliveira, G Magagnin, ... Nanoscale 17 (34), 19794-19805 , 2025 2025 Citations: 2
The benefits of incorporating lead-free ferroelectric materials in high energy density Li-and Li-free batteries AR Jayakrishnan, VB Isfahani, SKP Nair, KC Sekhar, LS Marques, ... Journal of Energy Storage 97, 112846 , 2024 2024 Citations: 5
MOST CITED SCHOLAR PUBLICATIONS
Are lead-free relaxor ferroelectric materials the most promising candidates for energy storage capacitors? AR Jayakrishnan, JPB Silva, K Kamakshi, D Dastan, V Annapureddy, ... Progress in Materials Science 132, 101046 , 2023 2023 Citations: 388
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ... APL Materials 11 (8) , 2023 2023 Citations: 167
High‐performance ferroelectric–dielectric multilayered thin films for energy storage capacitors JPB Silva, JMB Silva, MJS Oliveira, T Weingärtner, KC Sekhar, M Pereira, ... Advanced Functional Materials 29 (6), 1807196 , 2019 2019 Citations: 117
Energy harvesting technologies for structural health monitoring of airplane components—A review S Zelenika, Z Hadas, S Bader, T Becker, P Gljušćić, J Hlinka, L Janak, ... Sensors 20 (22), 6685 , 2020 2020 Citations: 102
Charge Coupling Enhanced Photocatalytic Activity of BaTiO 3 /MoO 3 Heterostructures KV Alex, A Prabhakaran, AR Jayakrishnan, K Kamakshi, JPB Silva, ... ACS applied materials & interfaces 11 (43), 40114-40124 , 2019 2019 Citations: 100
Advances in dielectric thin films for energy storage applications, revealing the promise of group IV binary oxides JPB Silva, KC Sekhar, H Pan, JL MacManus-Driscoll, M Pereira ACS Energy Letters 6 (6), 2208-2217 , 2021 2021 Citations: 99
Effect of heat treatment on electrical and surface properties of tungsten oxide thin films grown by HFCVD technique GL Tan, D Tang, D Dastan, A Jafari, JPB Silva, XT Yin Materials Science in Semiconductor Processing 122, 105506 , 2021 2021 Citations: 93
Composition-dependent xBa (Zr0. 2Ti0. 8) O3-(1-x)(Ba0. 7Ca0. 3) TiO3 bulk ceramics for high energy storage applications AR Jayakrishnan, KV Alex, A Thomas, JPB Silva, K Kamakshi, N Dabra, ... Ceramics International 45 (5), 5808-5818 , 2019 2019 Citations: 92
Structures, morphological control, and antibacterial performance of tungsten oxide thin films GL Tan, D Tang, D Dastan, A Jafari, Z Shi, QQ Chu, JPB Silva, XT Yin Ceramics International 47 (12), 17153-17160 , 2021 2021 Citations: 89
High-performance self-powered photodetectors achieved through the pyro-phototronic effect in Si/SnOx/ZnO heterojunctions JPB Silva, EMF Vieira, K Gwozdz, A Kaim, LM Goncalves, ... Nano Energy 89, 106347 , 2021 2021 Citations: 81
High-Performance μ-Thermoelectric Device Based on Bi 2 Te 3 /Sb 2 Te 3 p–n Junctions EMF Vieira, AL Pires, JPB Silva, VH Magalhães, J Grilo, FP Brito, MF Silva, ... ACS applied materials & interfaces 11 (42), 38946-38954 , 2019 2019 Citations: 74
Wake-up Free Ferroelectric Rhombohedral Phase in Epitaxially Strained ZrO2 Thin Films JPB Silva, RF Negrea, MC Istrate, S Dutta, H Aramberri, J Íñiguez, ... ACS Applied Materials & Interfaces , 2021 2021 Citations: 73
Characterization of freezing effect upon stability of, probiotic loaded, calcium-alginate microparticles S Sousa, AM Gomes, MM Pintado, JP Silva, P Costa, MH Amaral, ... Food and Bioproducts Processing 93, 90-97 , 2015 2015 Citations: 51
Energy storage performance of ferroelectric ZrO 2 film capacitors: effect of HfO 2: Al 2 O 3 dielectric insert layer JPB Silva, JMB Silva, KC Sekhar, H Palneedi, MC Istrate, RF Negrea, ... Journal of Materials Chemistry A 8 (28), 14171-14177 , 2020 2020 Citations: 50
Unraveling the ferroelectric switching mechanisms in ferroelectric pure and La doped HfO2 epitaxial thin films A Silva, I Fina, F Sanchez, JPB Silva, L Marques, V Lenzi Materials Today Physics 34, 101064 , 2023 2023 Citations: 48
Ferroelectric phase transitions studies in 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 ceramics JPB Silva, EC Queirós, PB Tavares, KC Sekhar, K Kamakshi, JA Moreira, ... Journal of Electroceramics 35 (1), 135-140 , 2015 2015 Citations: 48
Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3/ZnO heterostructures KC Sekhar, JPB Silva, K Kamakshi, M Pereira, MJM Gomes Applied Physics Letters 102 (21) , 2013 2013 Citations: 46
Enhanced resistive switching characteristics in Pt/BaTiO 3 /ITO structures through insertion of HfO 2 :Al 2 O 3 (HAO) dielectric thin layer JPB Silva, FL Faita, K Kamakshi, KC Sekhar, JA Moreira, A Almeida, ... Scientific Reports 7 (1), 46350 , 2017 2017 Citations: 45
Ferroelectric Orthorhombic ZrO 2 Thin Films Achieved Through Nanosecond Laser Annealing APS Crema, MC Istrate, A Silva, V Lenzi, L Domingues, MO Hill, ... Advanced Science 10 (15), 2207390 , 2023 2023 Citations: 43
Recent development of lead-free relaxor ferroelectric and antiferroelectric thin films as energy storage dielectric capacitors AR Jayakrishnan, BA Anju, SKP Nair, S Dutta, JPB Silva Journal of the European Ceramic Society 44 (7), 4332-4349 , 2024 2024 Citations: 42
