Name: Dr. Godwinraj D,
Qualification: ME., PhD (in Electron Devices)
Position: Associate Professor, ECE Department, Amal Jyothi College of Engg., Koovapally po, Kanjirapally,
Specialization: VLSI and Devices for Space and biomedical Applications.
Godwinraj D has completed his Bachelor of Engineering in Electronics and Communication Engineering and Masters of Engineering with specialization in Applied Electronics under Anna University, Chennai. He completed Ph.D in “Advanced Heterostructure Devices for power Applications (Space and Radar)” under Jadavpur University, Kolkata in 2015. He is a recipient of Senior Research Fellowship from the Department of Science and Technology (DST), 2011-2013, Council of Scientific and Industrial Research (CSIR), Government of India, New Delhi from 2013-2015. He has four years of research experience and has published 29 SCI research papers in international journals which are SCI indexed. He has presented 15 research papers in international and national
EDUCATION
PhD in Electron Devices
RESEARCH, TEACHING, or OTHER INTERESTS
Electrical and Electronic Engineering, Materials Science, Biomedical Engineering, Artificial Intelligence
30
Scopus Publications
267
Scholar Citations
7
Scholar h-index
7
Scholar i10-index
Scopus Publications
Impact on Breakdown Voltage for AlGaN Channel E-HEMT Device used with the DC Boost Converter Circuit Godwinraj D, Godfrey D, P. Sundararaman, V. Nandagopal International Journal of Electrical and Electronics Research, 2025 In this paper, the impact on breakdown performance is demonstrated by the coupled operation of the E-mode AlGaN Channel HEMT for DC Boost Converter Circuit. CAD optimization of individual devices on the process and E-mode HEMT device level affects the circuit performance DC Boost Converter Circuit. The field plate length of Fp=2.7 µm results in the steady current at the voltage of VBV=790 V, whereas the field plate length of 3.6 µm results breakdown voltage of more than 1k volts. Circuit voltages at various nodes, Current in HEMT and SBD for switching cycle, and also the power dissipation is evaluated for two various doping concentrations 3E15(/cm3) and 9E15(/cm3). As a result, the dependency of power losses in the circuit on the physical parameters of the process stage is demonstrated.
Precision Control and Hysteresis Modeling of Piezoelectric Nano-Positioning Systems for Enhanced Healthcare Applications Sreeja C, Godwinraj D 2024 5th International Conference for Emerging Technology Incet 2024, 2024 The precise control and manipulation of objects at the nanoscale is the focus of nano positioning systems, which hold promise for use in a variety of healthcare and medical fields, including drug delivery systems, lab-on-a-chip devices, biomedical research, microsurgery and minimally invasive procedures, and nanoscale imaging and diagnostics. Modern healthcare relies heavily on health diagnostic gadgets and algorithms because they make it possible to accurately and quickly diagnose a wide range of medical disorders. Robustness is an essential element in practical implementation. However, creep, hysteresis, and friction in a linear actuator affect output motion precision and may undermine system stability. Tracking control and Bouc-Wen hysteresis modelling for piezoelectric actuators are examined in this paper. The actuator can be used in optical systems, microscope stages, nano-positioning platforms, and other precision positioning systems because to its small size and high-resolution displacement capabilities. The system's static and dynamic behaviour is analyzed using a Bouc-Wen non-symmetric model. The Bouc-Wen model is useful for simulating piezoelectric actuator system hysteresis because to its good agreement between anticipated and actual curves. The Hysteresis model parameters are optimized using the parameter optimization toolbox in MATLAB. PID control is examined for the system's tracking performance and hysteresis, and it is discovered to provide improved tracking performance.
Bouc-Wen Hysteresis Modelling and Tracking Control of Piezoelectric Actuator for Precision Nano-Positioning Systems in Healthcare C. Sreeja, D. Godwinraj Industry 5 0 for Smart Healthcare Technologies Utilizing Artificial Intelligence Internet of Medical Things and Blockchain, 2024 Nano-positioning systems, which precisely control and manipulate objects at the nanoscale, find potential applications in healthcare, including biomedical research, microsurgery, minimally invasive procedures, drug delivery systems, nanoscale imaging, and diagnostics, as well as lab-on-a-chip devices. Health diagnostic devices and algorithms are pivotal in modern healthcare, facilitating accurate and efficient diagnosis of various medical conditions. Robustness is crucial in real-world applications, yet the inherent nonlinearities of linear actuators, such as creep, hysteresis, and friction, significantly affect output motion precision and system stability. This study investigates Bouc-Wen hysteresis modelling and tracking control of the AE0203D04DF piezoelectric actuator. Its compact size and high-resolution displacement capabilities make it suitable for optical systems, microscopy stages, nano-positioning platforms, and precision positioning systems. A modified Bouc-Wen non-symmetric model is employed to analyze the system’s behaviour in static and dynamic states, showing strong agreement between predicted and measured curves. Coupled with intelligent algorithms, this technology aids healthcare professionals in informed decision-making and improves patient outcomes. Medical imaging devices, such as X-ray, CT, MRI, or ultrasound, capture detailed body structures, with advanced algorithms assisting radiologists in analysis and interpretation, enhancing image quality, automating analysis, and improving diagnostic accuracy.
Revolutionizing Neurological Diagnosis: Innovations in ErrP for Enhanced Detection Praseeda B Nair, Godwinraj D, Little Therese Mathew, N Sreedu Krishna, Sheryl Varghese Proceedings 2024 IEEE International Conference on Signal Processing Informatics Communication and Energy Systems Harmonizing Signals Data and Energy Bridging the Digital Future Spices 2024, 2024 The primary focus of the work is the extraction and visualization of ErrP data, specifically comparing individuals with learning disabilities and hyperactivity to healthy counterparts.Using advanced methodologies, our goal is to uncover hidden patterns within neural signals, illuminating the intricate features of neurodegenerative diseases. This research aims to investigate real-time neural dynamics in individuals with varied cognitive profiles, such as those with learning disabilities, intellectual disabilities, hyperactivity, and related conditions. Using advanced techniques like Short-Time Fourier Analysis (STFA), the research aims to elucidate error perception and cognitive control mechanisms in diverse populations beyond just those with schizophrenia. Through extensive experimentation involving more than 10 individuals representing a spectrum of cognitive profiles, including learning disabilities, mental retardation, and hyperactivity, garnered valuable insights into real-time neural responses during error monitoring tasks.. This nuanced understanding of real-time neural dynamics not only enhances comprehension of error processing mechanisms but also paves the way for tailored interventions and treatments for cognitive dysfunction in diverse populations. By decoding neural signals and elucidating error-related processes,this aims to bridge the gap between neuroscience and practical applications, ultimately improving the quality of life for individuals with diverse cognitive profiles. These findings have profound implications for real-time interventions, human-computer interaction, and the development of assistive technologies, opening new pathways for improving adaptive behavior and cognitive function in daily life.
Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks Yu-Lin Chen, Wen-Kuan Yeh, Heng-Tung Hsu, Ke-Horng Chen, Wen-Chin Lin, Tien-Han Yu, Hung-Ting Chou, D Godwin Raj, D Godfrey Ecs Journal of Solid State Science and Technology, 2023 Device degradation due to hot carrier injection (HCI) in multi-fin 20 nm and 10 nm N- and P-type FinFET devices are thoroughly analyzed. To further understand the HCI reliability of the four FinFET devices, the device is fabricated with a standard Vt base and low Vt base gate stacks with different work functions. It is evident that: (i) The standard Vt device sustains lower effective stress bias due to the difference in threshold voltage, resulting in a more stable threshold voltage than the low Vt base device, and (ii) the transconductance of the single N- and P-type FinFET is more severely degraded than the multi-fin N- and P-type FinFET, mainly because multi N- and P-type Finfet has coupe effect, which effectively reduces the impact of HCI.
Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length Yu-Lin Chen, Wen-Kuan Yeh, Ke-Horng Chen, Heng-Tung Hsu, Chin-Tsai Hsu, D Godwin Raj, Hung-Ting Chou, Jui-Sheng Wu, Tien-Han Yu, D Godfrey Ecs Journal of Solid State Science and Technology, 2023 Device degradation due to hot carrier injection (HCI) in different Y-gate HEMT devices is thoroughly analyzed. To further understand the HCI reliability of the Y-gate HEMT devices, the device is fabricated with AlGaN/GaN structure with different top lengths (Ltop). An HCI stress time of 6000 s was conducted on these devices, while V t stability in other stress time domains, leakage current, and transconductance degradation are also discussed. In this work, we have demonstrated that increasing the LTop length could avoid the virtual gate effect and disperse the influence of the electric field under HCI stress. Furthermore, the effects of trapping in various locations, such as in the bulk SiN or AlGaN/GaN interface has been discussed. These trapping effects caused by the HCI stress might be the source of the Vth shift. Overall, The large Y-gate HEMT showed the lowest degradation of DC characteristics after the long HCI stress test.
Recent advancement in TENG polymer structures and energy efficient charge control circuits D. Godwinraj, Soney C. George Advanced Industrial and Engineering Polymer Research, 2021 Tribo-electric nanogenerator proved a better alternative energy resource for many electronic accessories because of its flexible nature and optimized device properties. It opens up the use of polymer materials (PMs) for harvesting mechanical energy. The disadvantage of the Tribo-Electric Nano Generator (TENG) is likely lower durability, limited short circuit output current, structural changes, post-stress conditions, etc. The purpose of this review article is more focused on systematic and detailed descriptions of TENGs. It gives an overview of tribo-electric polymer-based material formation and triboelectricity generation, structural modes of tribo-electric polymer-based nanogenerators, and its comparisons, measurement, and quantification of tribo-electric polymer-based nanogenerators based on structural and load conditions. Also, this article focused on TNEG efficiency enhancement techniques using various charge control circuit techniques. Possible applications of TNEG for various self-powered devices such as sensor, actuators and bio-harvesting utilities are discussed in detail.
Impact on Breakdown Voltage for AlGaN Channel E-HEMT Device used with the DC Boost Converter Circuit D Godwinraj, D Godfrey International Journal of Electrical and Electronics Research 13 (1), 50-54 , 2025 2025.0
Bouc-Wen Hysteresis Modelling and Tracking Control of Piezoelectric Actuator for Precision Nano-Positioning Systems in Healthcare C Sreeja, D Godwinraj Industry 5.0 for Smart Healthcare Technologies, 217-226 , 2024 2024.0 Citations: 1
Precision Control and Hysteresis Modeling of Piezoelectric Nano-Positioning Systems for Enhanced Healthcare Applications C Sreeja, D Godwinraj 2024 5th International Conference for Emerging Technology (INCET), 1-5 , 2024 2024.0 Citations: 1
Robust Control of Precision Nano-Positioning System for Microsurgical Applications C Sreeja, D Godwinraj International Conference on ICT for Digital, Smart, and Sustainable … , 2024 2024.0 Citations: 1
The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs: YL. Chen et al. YL Chen, WK Yeh, HT Hsu, KH Chen, DH Lien, WC Lin, TH Yu, YS Chiu, ... Journal of Electronic Materials 52 (2), 1391-1399 , 2023 2023.0 Citations: 2
Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate D Godfrey, D Nirmal, L Arivazhagan, D Godwinraj, NM Kumar, Y Chen, ... Microelectronics Journal 118, 105293 , 2021 2021.0 Citations: 21
III–V Heterostructure Devices for Ultralow-Power, High-Power, and High-Breakdown Applications D Godwinraj Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications … , 2021 2021.0 Citations: 2
Enhancement of DC and breakdown performance on single to multi-step gate FP using GaN-HEMT for high power applications D Godfrey, D Nirmal, D Godwinraj, L Arivazhagan, N MohanKumar, ... Silicon 13 (4), 1177-1183 , 2021 2021.0 Citations: 4
Recent advancement in TENG polymer structures and energy efficient charge control circuits D Godwinraj, SC George Advanced Industrial and Engineering Polymer Research 4 (1), 1-8 , 2021 2021.0 Citations: 50
Performance Evaluation of Single Layer and Multi Layer Graphene Sheet Transistors B Babu, D Godwinraj Emerging Technologies for Sustainability, 403-410 , 2020 2020.0
Strain-induced ionic polarization dependent AlGaN/GaN high electron mobility transistor D Godfrey, D Nirmal, L Arivazhagan, D Godwinraj, NM Kumar, WK Yeh 2020 4th International Conference on Trends in Electronics and Informatics … , 2020 2020.0 Citations: 1
Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications D Godfrey, D Nirmal, L Arivazhagan, B Roy, YL Chen, TH Yu, WK Yeh, ... 2020 5th International Conference on Devices, Circuits and Systems (ICDCS … , 2020 2020.0 Citations: 23
Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications BK Jebalin, AS Rekh, P Prajoon, D Godwinraj, NM Kumar, D Nirmal Superlattices and Microstructures 78, 210-223 , 2015 2015.0 Citations: 52
Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices A Mohanbabu, N Anbuselvan, N Mohankumar, D Godwinraj, CK Sarkar Solid-State Electronics 91, 44-52 , 2014 2014.0 Citations: 45
Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices S Baskaran, A Mohanbabu, N Anbuselvan, N Mohankumar, D Godwinraj, ... Superlattices and Microstructures 64, 470-482 , 2013 2013.0 Citations: 39
Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices D Godwinraj, H Pardeshi, SK Pati, N Mohankumar, CK Sarkar Superlattices and Microstructures 54, 188-203 , 2013 2013.0 Citations: 25
Advanced Industrial and Engineering Polymer Research D Godwinraj, SC George
MOST CITED SCHOLAR PUBLICATIONS
Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications BK Jebalin, AS Rekh, P Prajoon, D Godwinraj, NM Kumar, D Nirmal Superlattices and Microstructures 78, 210-223 , 2015 2015.0 Citations: 52
Recent advancement in TENG polymer structures and energy efficient charge control circuits D Godwinraj, SC George Advanced Industrial and Engineering Polymer Research 4 (1), 1-8 , 2021 2021.0 Citations: 50
Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices A Mohanbabu, N Anbuselvan, N Mohankumar, D Godwinraj, CK Sarkar Solid-State Electronics 91, 44-52 , 2014 2014.0 Citations: 45
Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices S Baskaran, A Mohanbabu, N Anbuselvan, N Mohankumar, D Godwinraj, ... Superlattices and Microstructures 64, 470-482 , 2013 2013.0 Citations: 39
Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices D Godwinraj, H Pardeshi, SK Pati, N Mohankumar, CK Sarkar Superlattices and Microstructures 54, 188-203 , 2013 2013.0 Citations: 25
Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications D Godfrey, D Nirmal, L Arivazhagan, B Roy, YL Chen, TH Yu, WK Yeh, ... 2020 5th International Conference on Devices, Circuits and Systems (ICDCS … , 2020 2020.0 Citations: 23
Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate D Godfrey, D Nirmal, L Arivazhagan, D Godwinraj, NM Kumar, Y Chen, ... Microelectronics Journal 118, 105293 , 2021 2021.0 Citations: 21
Enhancement of DC and breakdown performance on single to multi-step gate FP using GaN-HEMT for high power applications D Godfrey, D Nirmal, D Godwinraj, L Arivazhagan, N MohanKumar, ... Silicon 13 (4), 1177-1183 , 2021 2021.0 Citations: 4
The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs: YL. Chen et al. YL Chen, WK Yeh, HT Hsu, KH Chen, DH Lien, WC Lin, TH Yu, YS Chiu, ... Journal of Electronic Materials 52 (2), 1391-1399 , 2023 2023.0 Citations: 2
III–V Heterostructure Devices for Ultralow-Power, High-Power, and High-Breakdown Applications D Godwinraj Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications … , 2021 2021.0 Citations: 2
Bouc-Wen Hysteresis Modelling and Tracking Control of Piezoelectric Actuator for Precision Nano-Positioning Systems in Healthcare C Sreeja, D Godwinraj Industry 5.0 for Smart Healthcare Technologies, 217-226 , 2024 2024.0 Citations: 1
Precision Control and Hysteresis Modeling of Piezoelectric Nano-Positioning Systems for Enhanced Healthcare Applications C Sreeja, D Godwinraj 2024 5th International Conference for Emerging Technology (INCET), 1-5 , 2024 2024.0 Citations: 1
Robust Control of Precision Nano-Positioning System for Microsurgical Applications C Sreeja, D Godwinraj International Conference on ICT for Digital, Smart, and Sustainable … , 2024 2024.0 Citations: 1
Strain-induced ionic polarization dependent AlGaN/GaN high electron mobility transistor D Godfrey, D Nirmal, L Arivazhagan, D Godwinraj, NM Kumar, WK Yeh 2020 4th International Conference on Trends in Electronics and Informatics … , 2020 2020.0 Citations: 1
Impact on Breakdown Voltage for AlGaN Channel E-HEMT Device used with the DC Boost Converter Circuit D Godwinraj, D Godfrey International Journal of Electrical and Electronics Research 13 (1), 50-54 , 2025 2025.0
Performance Evaluation of Single Layer and Multi Layer Graphene Sheet Transistors B Babu, D Godwinraj Emerging Technologies for Sustainability, 403-410 , 2020 2020.0
Advanced Industrial and Engineering Polymer Research D Godwinraj, SC George
