GANESH SHRIDHAR HEGDE

Scopus Publications

Physical, structural, and optical properties of BaF2-doped Li2O-SrO-B2O3oxyfluoride glasses for UV-A luminescence
H.B. Pannaga, H.N. Sahana, M. Rakshitha, C.S. Pavan Kumar, N. Sivasankara Reddy, kumar Pawan, R. Thejas, Ganesh Shridhar Hegde, G Ranjith Kumar, Tejas, Sudha D. Kamath, B.P. Siddalingeshwara
Ceramics International, 2026
Structural, optical, and Judd-Ofelt spectroscopic analysis of Dy3 + doped borate-based oxyfluoride glasses exhibiting enhanced UV excitable-yellow luminescence for advanced photonic applications
P. Abhiraj, C. Vishal, P. Sahana, N. Sivasankara Reddy, R. Theerthan Gowda, C.S Pavan Kumar, S. Akshay, Tejas, Ganesh Shridhar Hegde, Sudha D. Kamath, B.P. Siddalingeshwara
Journal of Alloys and Compounds, 2026
Defect-engineered single crystal Bi2Te3 via Sb and Se doping for enhanced thermoelectric performance
Suchitra Puthran, Ganesh Shridhar Hegde, A. N. Prabhu, You-Lun Wang, Y. K. Kuo, Sindhur Joshi, N. K. Udayashankar, Ramakrishna Nayak
Journal of Materials Science, 2025
The limitation of the single crystal melt growth method to tune the microstructure of the materials in a controlled way and the need for enhancing the thermoelectric properties of single crystal grown Bismuth telluride (Bi 2 Te 3 ), through defect and microstructural engineering, has motivated this work. In this work, we address this limitation through a controlled doping strategy using antimony (Sb) and selenium (Se) to introduce targeted defects and microstructural modifications within single-crystalline Bi 2 Te 3 . Sb and Se substitutions create atomic scale strain, point defects, and micro-grain structures, enhancing phonon scattering without significantly disrupting the crystalline order. The resulting defect-engineered single crystals exhibit improved thermoelectric performance, with a notable reduction in lattice thermal conductivity and retention of excellent electrical properties. The co-doped compositions, Bi 2 Te 2.7 Se 0.3 and (Bi0.98Sb 0.02 ) 2 Te 2.7 Se 0.3 , exhibited significantly enhanced thermoelectric performance, with Seebeck coefficients reaching ~ 253 μV/K and − 211 μV/K, respectively, over the 10–400 K range. The power factor improved remarkably, showing a ~ 30-fold increase for Bi 2 Te 2.7 Se 0.3 and ~ 20-fold for the Sb-doped variant, while the figure of merit (ZT) improved by ~ 28.5 and ~ 14 times, respectively. Further, a flexible thermoelectric device fabricated from these optimized materials generated output power of 2.7 nW and 3.35 nW at ambient temperature. The non-monotonic variation of the Seebeck coefficient with Sb content, showing an optimal enhancement at x = 0.04, highlights the delicate balance between carrier concentration and band structure modification, emphasizing moderate Sb substitution achieves the most favorable conditions for thermoelectric performance. Our results present a scalable strategy for bridging the performance gap between pristine single crystals and heavily nanostructured thermoelectrics, opening new avenues for high-efficiency energy harvesting devices.
Investigation of physical and optical properties of ZnF2-doped B2O3–Li2O–SrO oxyfluoride glasses exhibiting UV-B luminescence
K.S. Varini, Lisha Mascarenhas, Niveditha Kamaraj, C.S. Pavan Kumar, N. Sivasankara Reddy, Ganesh Shridhar Hegde, B.P. Siddalingeshwara, G. Ranjith Kumar
Journal of Alloys and Compounds, 2025
Impact of NaI/KI blending on structural, optical, and impedance properties of sodium carboxymethyl cellulose biopolymer films
S. Nalina, Sujeet Kumar, Tejashree Bhat, V. Prakruthi, N. S. Keerthana, Seema S. Pattanshetty, D. Vinay, Rajeev R. Potadar, Suchitra Putran, A. N. Prabhu, M. S. Murari, Manohar Pillegowda, K. R. Jahnavi, Ganesh Shridhar Hegde
Polymer Bulletin, 2025
An insight into experimental and theoretical thermoelectric property of antimony and tellurium-doped Bi2Se3 single crystals
Suchitra Puthran, Ganesh Shridhar Hegde, A. N. Prabhu, Yen-Hui Chen, Y. K. Kuo, Vikash Mishra
Journal of Materials Science Materials in Electronics, 2025
The thermoelectric properties of Bi2Se3 single crystals were investigated with Sb and Te co-doping using a modified vertical Bridgman method, complemented by theoretical studies. X-ray diffraction confirmed the rhombohedral crystal structure with an R $$\\overline{3 }$$ 3 ¯ m space group. High-resolution X-ray diffraction (HR-XRD) analysis revealed a high degree of periodicity, threefold symmetry, and c-axis growth through θ − 2θ scans. Hall effect and Seebeck coefficient measurements indicated n-type conductivity across all samples, with a carrier concentration of approximately 1025 m−3. At 300 K, the electrical resistivity of the (Bi0.96Sb0.04)2Se2.7Te0.3 crystal was reduced by a factor of ~ 8.0 compared to pristine BiSe3. Additionally, the power factor and figure of merit of the (Bi0.96Sb0.04)2Se2.7Te0.3 compound improved by 3 times and 1.2 times, respectively. Theoretical studies using density functional theory (DFT) supported these experimental findings, showing that substituting Sb in Bi2Se3 enhances its electrical properties.
A review on structural correlation to non-linear optical studies of REOs, HMOs and TMOs doped borate glasses
S. Shilpa, J. Gurusiddappa, G. Ranjith Kumar, B. P. Siddalingeshwara, Ganesh Shridhar Hegde
Journal of Optics India, 2025
Review of Chalcogenide-Based Materials for Low-, Mid-, and High-Temperature Thermoelectric Applications
Suchitra Puthran, Ganesh Shridhar Hegde, Ashwatha Narayana Prabhu
Journal of Electronic Materials, 2024
Thermoelectric materials possess the capability to convert electricity into heat and vice versa. The utilization of chlorofluorocarbons and hydrochlorofluorocarbons as thermal carrier agents in traditional cooling and air conditioning systems has sparked a surge in exploration toward pioneering refrigeration and spatial conditioning technologies. Chalcogenides, known for their capacity to amplify the thermoelectric efficiency of materials and their adaptability across a broad spectrum of temperatures, stand out as pivotal components in thermoelectric materials. Despite their existing suboptimal performance, these materials hold substantial promise as power generators and as solid-state Peltier coolers, attracting significant attention and positioning them as subjects ripe for further investigation. Categorized into alkali or alkaline earth, transition metal, and main-group chalcogenides, these materials and their respective subclasses are meticulously scrutinized to pinpoint the most suitable thermoelectric materials for specific applications with an optimal operational temperature span. In the quest for energy-efficient technologies characterized by simple designs, absence of moving components, and superior stability, thermoelectric materials play a crucial role. This review highlights the advancements in theoretical parameters as well as the figure of merit (ZT) of chalcogenide materials, emphasizing their device applications. These insights are intended to provide viable future approaches to mainstream thermoelectric materials. This review reveals that Cu2Se achieves a maximum ZT value of 2.66 at 1039 K, marking it as the top performer among transition metal chalcogenides. Conversely, SnSe, a main-group metal monochalcogenide, exhibits a ZT value of 2.8 at 773 K, whereas nanowires of the main group of bismuth chalcogenides exhibit a ZT value of 2.5 at 350 K.
Solution-Free Melt-Grown CsGeI3 Polycrystals for Lead-Free Perovskite Photovoltaics: Synthesis, Characterization, and Theoretical Insights
Mariot Jose Panjikaran, A. Pramitha, Vikash Mishra, Ganesh Shridhar Hegde, Ashwatha Narayana Prabhu, Nagabhushan Jnaneshwar Choudhari, Abdelmajid Timoumi, Y. Raviprakash
Journal of Electronic Materials, 2024
Inorganic lead-free metal halide perovskites are being rigorously explored as a substitute for organic lead-based materials for various energy device applications. Germanium as a replacement for lead has been proven to give exemplary results theoretically, and there have been promising results. The current work presents the investigation of CsGeI3 (CGI) polycrystals grown using a solution-free melt-growth technique with low-cost precursors. A soak-ramp profile was designed to synthesize polycrystalline powders, which were evaluated for stability. X-ray diffraction and Raman spectroscopy analysis suggest the formation of CsGeI3 perovskite powders, matching the reported literature. Diffuse reflectance spectroscopy measurements showed the bandgap of the polycrystals to be around 1.6 eV. A prominent photoluminescence peak was obtained at 767 nm. The powders were examined using thermogravimetric analysis to assess the thermal degradation pathways. The as-grown inorganic perovskite polycrystals were relatively stable during storage under ambient conditions. Theoretical studies were also carried out to support the experimental data. Calculations were performed with different approximations, including local density approximation (LDA), generalized gradient approximation (GGA), and Heyd–Scuseria–Ernzerhof (HSE) approximation, out of which the HSE approximation yielded the most accurate results that matched the experimental findings. Moreover, for the CGI device with Ag electrodes simulated using SCAPS-1D software, highest incident photon-to-electron conversion efficiency was observed. The obtained optical and structural properties indicate the suitability of the synthesized CsGeI3 perovskite polycrystals for photovoltaic applications, specifically solar cells and light-emitting diodes.
Tuning of power factor in bismuth selenide through Sn/Te co doping for low temperature thermoelectric applications
Ganesh Shridhar Hegde, Ashwatha Narayana Prabhu, Ramakrishna Nayak, C. F. Yang, Y. K. Kuo
Applied Physics A Materials Science and Processing, 2024
The physical parameters of solid-state produced tin and tellurium co-doped bismuth selenide polycrystalline crystals were described. Powder X-ray diffraction revealed the hexagonal structure in the samples’ phase domination. A field emission scanning electron microscope was used to analyze the surface microstructure. Thermoelectric properties such as Seebeck coefficient, electrical resistivity, and thermal conductivity were analyzed in the temperature range 10–350 K. The electrical resistivity of (Bi0.96Sn0.04)2Se2.7Te0.3 was found to be four times lower than that of pure Bi2Se3. Due to donor-like effects and antisite defects, the Seebeck coefficient demonstrates a p- to n-type semiconducting transition. When compared to pure Bi2Se3, power factor and thermoelectric figure of merit of (Bi0.96Sn0.04)2Se2.7Te0.3 is found to increase by 15 and 9 times respectively. Tellurium excess boosts tin vacancies, promoting the p to n-type transition in (Bi0.96Sn0.04)2Se2.7Te0.3, making it a good option for low temperature thermoelectric and sensor applications.
A comprehensive experimental and DFT analysis on thermoelectric properties of Sb, Te co-doped Bi2Se3 polycrystals
Suchitra Puthran, Ganesh Shridhar Hegde, A. N. Prabhu, Vikash Mishra, Tzu-Yi Yang, Y. K. Kuo
Journal of Materials Science, 2024
Potential improvement in power factor of (Bi0.98Ge0.02)2Te2.7Se0.3 compound due to defect engineering
Swaraangi Shirodkar, A. N. Prabhu, Suchitra Putran, Ashok Rao, U. Deepika Shanubhogue, Ganesh Shridhar Hegde
Journal of Materials Science Materials in Electronics, 2024
Enhancing the Thermoelectric Power Factor by Lowering the Electrical Resistivity of Bi2Se3/NaI Composites Prepared by Solid-State Reaction
Vivekananda, P. K. Prarthana, M. Archana, R Gowrishree, Tejashree Bhat, V Prakruthi, N. S. Keerthana, P. Sharath, T. Tabassum Sulthana, R. Thulasi, Vaishnavi S. Naidu, V. S. Shilpa, D. Vinay, S. Nalina, Rajeev R. Potadar, Ganesh Shridhar Hegde, A. N. Prabhu, Ashok Rao, U. Deepika Shanubhogue, Suchitra Putran, M. S. Murari, K. R. Jahnavi, Sujeet Kumar
Journal of Electronic Materials, 2023
Thermoelectric analysis of (Bi0.98In0.02)2Te2.7Se0.3/polyaniline and (Bi0.98In0.02)2Se2.7Te0.3/polyaniline composites
Ganesh Shridhar Hegde, A. N. Prabhu, Suchitra Putran, Megha Y. Bhat, P. D. Babu
Journal of Materials Science Materials in Electronics, 2023
Thermoelectric Composite of (Bi0.98In0.02)2Te2.7Se0.3/Bi2Se3 with Enhanced Thermopower and Reduced Electrical Resistivity
Ganesh Shridhar Hegde, A. N. Prabhu, Suchitra Putran, Ashok Rao, K. Gurukrishna, U. Deepika Shanubhogue
Journal of Electronic Materials, 2023
Influence of indium and selenium co-doping on structural and thermoelectric properties of Bi2Te3 alloys
Ganesh Shridhar Hegde, A. N. Prabhu, M. K. Chattopadhyay
Journal of Materials Science Materials in Electronics, 2023
Investigation of near-room and high-temperature thermoelectric properties of (Bi0.98In0.02)2Se2.7Te0.3/Bi2Te3 composite system
Ganesh Shridhar Hegde, A. N. Prabhu, Ashok Rao, K. Gurukrishna, U. Deepika Shanubhogue
Journal of Materials Science Materials in Electronics, 2022
A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges
Ganesh Shridhar Hegde, A. N. Prabhu
Journal of Electronic Materials, 2022
Reduction in electrical resistivity of bismuth selenide single crystal via Sn and Te co-doping
Ganesh Shridhar Hegde, A.N. Prabhu, C.F. Yang, Y.K. Kuo
Materials Chemistry and Physics, 2022
Thermoelectric properties of co-doped (Bi0.98In0.02)2Te2.7Se0.3 /reduced graphene oxide composites prepared by solid-state reaction
Ganesh Shridhar Hegde, Vinay Parol, Ashok Rao, A.N. Prabhu, Joshua J.B. Levinsky, Graeme R. Blake
Materials Research Bulletin, 2022
Improved electrical conductivity and power factor in Sn and Se co-doped melt-grown Bi2Te3 single crystal
Ganesh Shridhar Hegde, A. N. Prabhu, M. K. Chattopadhyay
Journal of Materials Science Materials in Electronics, 2021
Potential thermoelectric materials of indium and tellurium co-doped bismuth selenide single crystals grown by melt growth technique
Ganesh Shridhar Hegde, A.N. Prabhu, Y.H. Gao, Y.K. Kuo, V. Raghavendra Reddy
Journal of Alloys and Compounds, 2021
Enhancement in thermoelectric figure of merit of bismuth telluride system due to tin and selenium co-doping
Ganesh Shridhar Hegde, A.N. Prabhu, Ashok Rao, M.K. Chattopadhyay
Materials Science in Semiconductor Processing, 2021
Reduction in thermal conductivity and electrical resistivity of indium and tellurium co-doped bismuth selenide thermoelectric system
Ganesh Shridhar Hegde, A. N. Prabhu, R. Y. Huang, Y. K. Kuo
Journal of Materials Science Materials in Electronics, 2020
Enhancement of thermoelectric performance of In doped Bi2Te2.7Se0.3 compounds
Ganesh Shridhar Hegde, A.N. Prabhu, Ashok Rao, P.D. Babu
Physica B Condensed Matter, 2020
Structural and optical characterization of novel nitro substituted D-π-A-π-A type chalcone single crystal showing second-order and third-order nonlinear optical properties
Vinay Parol, V. Upadhyaya, Ganesh Shridhar Hegde, N.K. Lokanath, A.N. Prabhu
Physica B Condensed Matter, 2020

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